Solid state transducer dies having reflective features over contacts and associated systems and methods
Systems and methods for improved light emitting efficiency of a solid state transducer (SST), for example light emitting diodes (LED), are disclosed. One embodiment of an SST die in accordance with the technology includes a reflective material disposed over electrical connectors on a front side of the die. The reflective material has a higher reflectivity than a base material of the connectors such that light traveling toward the connectors reflects back out of the device.
1. A light emitting diode (LED), comprising:
a transduction structure including a back side, a front side opposite the back side, a first semiconductor material having a surface at the back side, a second semiconductor material having a surface at the front side, and an active material between the first and second semiconductor materials;
a first electrical connector electrically coupled to the first semiconductor material; and
a second electrical connector having—
a base material electrically coupled to the second semiconductor material,
a buried contact having the base material extending through the first semiconductor material and the active material from the back side of the transduction structure to a depth in the second semiconductor material,
a reflective material over the base material, wherein the reflective material has a higher reflectivity than the base material, and wherein the reflective material covers at least a portion of the base material within the second semiconductor material, and
an insulation material electrically isolating the second electrical connector from the first semiconductor material and the active material.
2. The LED of claim 1 wherein the base material is at least one of a Ti-Al alloy and Al, and the reflective material is at least one of Al, Ag or an Ag alloy.
3. The LED of claim 1 wherein the base material comprises:
a top side facing the first side of the transduction structure, and
a lateral side facing the insulation material, wherein the reflective material covers at least the top side and a portion of the lateral side of the base material.
4. A light emitting diode (LED) device, comprising:
a support substrate;
an LED die on the support substrate, the LED die including—
a back side facing the support substrate, a front side opposite the back side, a first semiconductor material having a first surface at the back side, a second semiconductor material having a second surface at the front side, and an active material between the first and second semiconductor materials;
a first electrical connector electrically coupled to the first semiconductor material;
a second electrical connector comprising a buried contact having—
a base material extending through the first semiconductor material and the active material to a depth in the second semiconductor material, and
a reflective material covering at least a portion of the base material within the second semiconductor material, wherein the reflective material has a higher reflectivity than the base material;
an insulation material electrically isolating the second electrical connector from the first semiconductor material and the active material;
a converter material disposed at least partially around the active semiconductor material; and
a lens forming a cavity for housing at least the LED die.
5. A method of manufacturing light emitting diode (LED) dies, comprising:
forming a transduction structure having a back side, a front side opposite the back side, a first semiconductor material having a first surface at the back side, a second semiconductor material having a second surface at the front side, and an active material between the first and second semiconductor materials;
forming a first electrical connector electrically coupled to the first semiconductor material;
forming a second electrical connector electrically coupled to the second semiconductor material by—
electrically coupling a base material of the second electrical connector to the second semiconductor material, and
depositing a reflective material over the base material, wherein the reflective material has a higher reflectivity than the base material; and
disposing an insulation material electrically between the second electrical connector and each of the first semiconductor material and the active material.
6. The method of claim 5 wherein forming the second electrical connector comprises constructing a buried contact having the base material extending through the first semiconductor material and the active material from the back side of the transduction structure to a depth in the second semiconductor material.
7. The method of claim 6 wherein the base material is at least one of a Ti-Al alloy and Al, and the reflective material is at least one of Al, Ag or an Ag alloy.