IP Library Granted Patent US 10,040,971
Granted Patent B2
US 10,040,971 · App. 15/274,812 · Granted Aug 7, 2018

Polishing agent and method for polishing substrate using the polishing agent

Inventors: Yousuke Hoshi (Tsukuba, JP); Daisuke Ryuzaki (Kodaira, JP); Naoyuki Koyama (Tsukuba, JP); Shigeru Nobe (Hitachi, JP)
Assignee: HITACHI CHEMICAL COMPANY, LTD.
C09G1/02B24B37/044C09K3/1463H01L21/30625H01L21/31053H01L21/31055H01L21/76224
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Quick Facts
Patent No.
US 10,040,971
App. No.
15/274,812
Granted
Aug 7, 2018
Kind
B2
Abstract

Disclosed is a polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic polysaccharide. The present invention can provide a polishing agent which is capable of polishing an insulating film at a high speed with less polishing flaws, and having a high polishing rate ratio of a silicon oxide film and a stopper film, in the CMP technology of flattening insulating film. The present invention can also provide a polishing agent set for storing the polishing agent, and a method for polishing a substrate using this polishing agent.

Claims (20)

1. A polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains a diallylamine polymer or a derivative or a copolymer thereof, wherein the diallylamine polymer or a derivative or a copolymer thereof includes at least one selected from the group consisting of a diallylamine polymer and a copolymer of monomers containing diallylamine and at least one selected from the group consisting of sulfur dioxide and a monomer compound having a carbon-carbon double bond.

2. The polishing agent according to claim 1 , wherein the average particle size of the tetravalent metal hydroxide particles is from 1 nm to 400 nm.

3. The polishing agent according to claim 1 , wherein the pH of the polishing agent is from 3.0 to 7.0.

4. The polishing agent according to claim 1 , wherein the content of the tetravalent metal hydroxide particles is from 0.001 parts by weight to 5 parts by weight relative to 100 parts by weight of the polishing agent.

5. The polishing agent according to claim 1 , wherein the zeta potential of the tetravalent metal hydroxide particles in the polishing agent is +10 mV or higher.

6. The polishing agent according to claim 1 , wherein the content in total of the additive is 0.0001 by weight or more relative to 100 parts by weight of the polishing agent.

7. The polishing agent according to claim 1 , further comprising polyvinyl alcohol.

8. The polishing agent according to claim 1 , which is used for polishing a surface to be polished containing at least silicon oxide at the surface.

9. The polishing agent according to claim 1 , wherein the tetravalent metal hydroxide is at least one of rare earth metal hydroxides and zirconium hydroxide.

10. A method for polishing a substrate, the method comprising:

applying pressure on a substrate on which a film to be polished is formed by pressing the substrate against a polishing cloth of a polishing platen; and

moving the substrate and the polishing platen relatively to each other to polish the film to be polished while supplying the polishing agent according to claim 1 between the film to be polished and the polishing cloth.

11. The method for polishing according to claim 10 , wherein a polishing cloth having a Shore D hardness of 70 or harder is used.

12. A polishing agent set comprising a slurry and an additive liquid, which are stored separately and mixed immediately before polishing or at the time of polishing to be the polishing agent according to claim 1 ,

wherein the slurry contains the tetravalent metal hydroxide particles and the water, and the additive liquid contains the additive and the water.

13. The polishing agent according to claim 1 , wherein the weight average molecular weight of the diallylamine polymer or a derivative or a copolymer thereof is 100 or greater.

14. A polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains a diallylamine polymer or a derivative or a copolymer thereof, wherein the diallylamine polymer or a derivative or a copolymer thereof includes at least one selected from the group consisting of a diallylamine polymer and a copolymer of monomers containing diallylamine and at least one selected from the group consisting of sulfur dioxide, maleic acid, fumaric acid, acrylamide and dimethylacrylamide.

15. A polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains a diallylamine polymer or a derivative or a copolymer thereof, wherein the diallylamine polymer or a derivative or a copolymer thereof includes at least one selected from the group consisting of a diallylamine hydrochloride polymer, a methyldiallylamine hydrochloride polymer, a methyldiallylamine amide sulfate polymer, a methyldiallylamine acetate polymer, a diallyldimethylammonium chloride polymer, a diallylamine hydrochloride-sulfur dioxide copolymer, a diallylamine acetate-sulfur dioxide copolymer, a diallylmethylethylammonium ethylsulfate-sulfur dioxide copolymer, a methyldiallylamine hydrochloride-sulfur dioxide copolymer, a diallyldimethylammonium chloride-sulfur dioxide copolymer, a diallyldimethylammonium chloride-acrylamide copolymer, a partial 3-chloro-2-hydroxypropylated diallylamine hydrochloride-diallyldimethylammonium chloride copolymer, a diallylamine hydrochloride-maleic acid copolymer, a diallylamine amide sulfate-maleic acid copolymer, and a maleic acid-diallyldimethylammonium chloride-sulfur dioxide copolymer.

16. The polishing agent according to claim 1 , further comprising a second additive.

17. The polishing agent according to claim 1 , further comprising a water-soluble polymer other than the diallylamine polymer or a derivative or a copolymer thereof.

Assignments (4)
CHANGE OF ADDRESS Recorded Feb 14, 2024
From: RESONAC CORPORATION
To: RESONAC CORPORATION
Reel/Frame 066599/0037 →
CHANGE OF NAME Recorded Mar 3, 2023
From: SHOWA DENKO MATERIALS CO., LTD.
To: RESONAC CORPORATION
Reel/Frame 062946/0125 →
CHANGE OF NAME Recorded Mar 2, 2023
From: HITACHI CHEMICAL COMPANY, LTD.
To: SHOWA DENKO MATERIALS CO., LTD.
Reel/Frame 062917/0865 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 24, 2018
From: HOSHI, YOUSUKE; RYUZAKI, DAISUKE; KOYAMA, NAOYUKI; NOBE, SHIGERU
To: HITACHI CHEMICAL COMPANY, LTD.
Reel/Frame 045625/0233 →
Priority Claims (6)
JP 2008-112443 · Apr 23, 2008 · national
JP 2008-112444 · Apr 23, 2008 · national
JP 2008-112445 · Apr 23, 2008 · national
JP 2008-301277 · Nov 26, 2008 · national
JP 2008-301285 · Nov 26, 2008 · national
JP 2008-301298 · Nov 26, 2008 · national
Continuity (4)
Continuation 14797294 · Jul 13, 2015
Continuation 13891064 · May 9, 2013
Continuation 12988898
Related Publication 20170009102A1 · Jan 12, 2017
Cited By (1)
US 12,448,544