3D vertical NAND memory device including multiple select lines and control lines having different vertical spacing

1. An apparatus comprising:

a pillar including a length;

a memory cell string and control lines located along a first segment of the pillar, the control lines including at least a first control line and a second control line, the first control line adjacent the second control line and separated from the second control line by a first distance in a direction of the length of the pillar, the memory cell string including a first memory cell located in a first level of the apparatus, and a second memory cell located in a second level of the apparatus the control lines including a first control line located in the first level of the apparatus, and a second control line located in the second level of the apparatus;

select lines located along a second segment of the pillar, the select lines including at least a first select line and a second select line, the first select line separated from the second select line by a second distance in the direction of the length of the pillar, wherein the second distance is less than the first distance; and

additional select lines located along a third segment of the pillar, the memory cell string located between the select lines and the additional select lines, the additional select lines including at least a first additional select line and a second additional select line, the first additional select line separated from the second additional select line by a third distance in the direction of the length of the pillar, wherein the third distance is less than the first distance.

2. The apparatus of claim 1 , wherein the first select line, the second select line, the first control line, and the second control line include a same material.

3. The apparatus of claim 1 , wherein e first select second select line, the first control line, and the second control line are formed from metal.

4. An apparatus comprising:

a pillar including a length;

a memory cell string and control lines located along a first segment of the pillar, the control lines including at least a first control line and a second control line, the first control line adjacent the second control line and separated from the second control line by a first distance in a direction of the length of the pillar, the memory cell string including a first memory cell located in a first level of the apparatus, and a second memory cell located in a second level of the apparatus the control lines including a first control line located in the first level of the apparatus, and a second control line located in the second level of the apparatus; and

select lines located along a second segment of the pillar, the select lines including at least a first select line and a second select line, the first select line separated from the second select line by a second distance in the direction of the length of the pillar, wherein the second distance is less than the first distance, wherein the select lines include a third select line located along the first segment of the pillar and next to the second select line, the third select line separated from the second select line by a third distance in the direction of the length of the pillar, wherein the third distance is less than the first distance.

5. The apparatus of claim 4 , wherein the first, second, and third select lines are coupled to each other.

6. The apparatus of claim 4 , further comprising a substrate, wherein the memory cell string is located between the substrate and the select lines.

7. The apparatus of claim 4 , further comprising a substrate, wherein the select lines are located between the memory cell string and the substrate.

8. The apparatus of claim 4 , wherein the first select line, the second select line, the first control line, and the second control line have a same thickness in the direction of the length of the pillar.

9. An apparatus comprising:

a pillar including a length;

a memory cell string and control lines located along a first segment of the pillar, the control lines including at least a first control line and a second control line, the first control line adjacent the second control line and separated from the second control line by a first distance in a direction of the length of the pillar, the memory cell string including a first memory cell located in a first level of the apparatus, and a second memory cell located in a second level of the apparatus the control lines including a first control line located in the first level of the apparatus, and a second control line located in the second level of the apparatus;

select lines located along a second segment of the pillar, the select lines including at least a first select line and a second select line, the first select line separated from the second select line by a second distance in the direction of the length of the pillar, wherein the second distance is less than the first distance; and

an additional select line different from the select lines, the additional select line located along an additional segment of the pillar between the first select line and the second control line, the additional select line adjacent the first select line and is separated from the first select line by a third distance in the direction of the length of the pillar, wherein the second distance is less than the third distance.

10. The apparatus of claim 9 , wherein the additional select line is separated from the second control line by a fourth distance in the direction of the length of the pillar, wherein the fourth distance is equal to the first distance.

11. An apparatus comprising:

a pillar including a length extending in a first direction, the pillar including a first segment, a second segment, and a third segment, the second segment located between the first and third segments;

a memory cell string and control lines located along the segment of the pillar;

select lines located along the third segment pillar, the select lines being coupled to each other;

an additional select line located along the second segment of the pillar, wherein the control lines, the select lines, and the additional select line include a same width extending in a second direction, wherein

the control lines include at least a first control line and a second control line, the first control line adjacent the second control line and separated from the second control line by a first distance in the first direction; and

the select lines include at least a first select line and a second select line, the first select line separated from the second select line by a second distance in the first direction, the second distance being less than the first distance; and

additional select lines located along a fourth segment of the pillar, the first segment of the pillar being between the second and fourth segments of the pillar, the additional select lines including a at least a first additional select line and a second additional select line, the first additional select line separated from the second additional select line by a third distance in the first direction, the third distance being less than the first distance.

12. The apparatus of claim 11 , further comprising a data line, the data line including a length extending in the second direction, wherein the pillar includes a conductive material directly contacting the data line.

13. The apparatus of claim 11 , further comprising a data line, the data line including a length extending in the second direction, and a conductive bridge coupled to the pillar and the data line, the conductive bridge including a length extending in the second direction.

14. The apparatus of claim 11 , further comprising:

a first slit, and a first dielectric material in the first slit, the first slit located immediately on a first side of the control lines, the select lines, and the additional select line; and

a second slit, and a second dielectric material in the second slit, the second slit located immediately next to a second side opposite from the first side of the control lines, the select lines, and the additional select line.