USING AN INTERCONNECT BUMP TO TRAVERSE THROUGH A PASSIVATION LAYER OF A SEMICONDUCTOR DIE

1 . A semiconductor die comprising:

a first semiconductor device having a first plurality of device fingers;

a second semiconductor device having a second plurality of device fingers;

a first passivation layer over the first semiconductor device; and

a first interconnect bump thermally and electrically connected to each of the first plurality of device fingers and to each of the second plurality of device fingers, wherein the first interconnect bump protrudes through a first opening in the first passivation layer.

2 . The semiconductor die of claim 1 further comprising a second passivation layer over the first semiconductor device, wherein:

the first passivation layer is over the second passivation layer;

the first semiconductor device has a plurality of sub-cells, wherein each of the plurality of sub-cells has a corresponding portion of the first plurality of device fingers; and

the second passivation layer has a plurality of openings, wherein the first interconnect bump protrudes through each of the plurality of openings.

3 . The semiconductor die of claim 2 wherein the second passivation layer comprises Silicon Dioxide.

4 . The semiconductor die of claim 2 wherein a thickness of the second passivation layer adjacent to each of the plurality of openings is between 150 nanometers and 5500 nanometers.

5 . The semiconductor die of claim 1 wherein the first interconnect bump is configured to conduct heat away from the first semiconductor device.

6 . The semiconductor die of claim 1 wherein the first interconnect bump is configured to provide an electrical connection from the first semiconductor device to an external device.

7 . The semiconductor die of claim 1 wherein the first interconnect bump is a flip chip bump.

8 . The semiconductor die of claim 1 wherein each of the first plurality of device fingers comprises a corresponding portion of a semiconductor material and a corresponding portion of a first interconnect layer, wherein each corresponding portion of the first interconnect layer is on the corresponding portion of the semiconductor material.

9 . The semiconductor die of claim 8 wherein the first interconnect layer comprises gold.

10 . The semiconductor die of claim 8 wherein the semiconductor material comprises Gallium Arsenide.

11 . The semiconductor die of claim 8 wherein the semiconductor material comprises N-type Gallium Arsenide.

12 . The semiconductor die of claim 8 further comprising a first under bump metallization layer on the first interconnect layer, wherein the first interconnect bump is over the first under bump metallization layer.

13 . The semiconductor die of claim 12 wherein the first under bump metallization layer comprises Titanium.

14 . The semiconductor die of claim 12 wherein a thickness of the first under bump metallization layer is between 500 Angstroms and 1500 Angstroms.

15 . The semiconductor die of claim 12 wherein the first interconnect bump is on the first under bump metallization layer.

16 . The semiconductor die of claim 12 further comprising a second under bump metallization layer, wherein the first under bump metallization layer is on the first interconnect layer, the second under bump metallization layer is on the first under bump metallization layer, and the first interconnect bump is on the second under bump metallization layer.

17 . The semiconductor die of claim 1 wherein the first semiconductor device is a transistor.

18 . The semiconductor die of claim 17 wherein the transistor is a heterojunction bipolar transistor.

19 . The semiconductor die of claim 17 wherein the transistor is a bipolar junction transistor.

20 . The semiconductor die of claim 17 wherein an emitter of the transistor comprises the first plurality of device fingers.