Metrology method and apparatus, computer program and lithographic system
Disclosed is a metrology apparatus for measuring a parameter of a lithographic process, and associated computer program and method. The metrology apparatus comprises an optical system for measuring a target on a substrate by illuminating the target with measurement radiation and detecting the measurement radiation scattered by the target; and an array of lenses. Each lens of the array is operable to focus the scattered measurement radiation onto a sensor, said array of lenses thereby forming an image on the sensor which comprises a plurality of sub-images, each sub-image being formed by a corresponding lens of the array of lenses. The resulting plenoptic image comprises image plane information from the sub-images, wavefront distortion information (from the relative positions of the sub-images) and pupil information from the relative intensities of the sub-images.
1. A metrology apparatus comprising:
an optical system comprising a sensor, the optical system configured to measure a target on a substrate by illuminating the target with radiation and, using the sensor, detecting the radiation scattered by the target; and
an array of lenses configured to form an image on the sensor, the image comprising a plurality of sub-images, such that each of the sub-images is formed by a corresponding one of the lenses;
wherein the optical system is further configured to:
measure intensity asymmetries in respective higher orders of the sub-images; and
determine, from the intensity asymmetries, a local target asymmetry.
2. The metrology apparatus of claim 1 , further configured to measure deviation of the positions of said sub-images relative to a regular 2D grid.
3. The metrology apparatus of claim 1 , further configured to calculate a pupil image from intensities of the sub-images.
4. The metrology apparatus of claim 1 , wherein the target is smaller than a measurement field of the metrology apparatus, such that a measurement of the target also comprises influence from structures adjacent the target; said metrology apparatus further configured to:
identify which of said sub-images result from measurement radiation scattered from said structures adjacent the target and which of said sub-images result from measurement radiation scattered from the target; and
reconstruct one or more parameters of the target using only sub-images which result from measurement radiation scattered from the target.
5. The metrology apparatus of claim 1 , wherein the target comprises two or more gratings having different pitches; said metrology apparatus further configured to identify which sub-image corresponds to which target by its location within the image.
6. A lithographic system comprising:
a lithographic apparatus comprising:
an illumination optical system arranged to illuminate a pattern; and
a projection optical system arranged to project an image of the pattern onto a substrate; and
a metrology apparatus comprising:
an optical system comprising a sensor, the optical system configured to measure a target on a substrate by illuminating the target with radiation and, using the sensor, detecting the radiation scattered by the target; and
an array of lenses configured to form an image on the sensor, the image comprising a plurality of sub-images, such that each of the sub-images is formed by a corresponding one of the lenses,
wherein the optical system is further configured to:
measure intensity asymmetry in corresponding higher orders of the scattered measurement radiation from said sub-images; and
determine, from each of the measurements of intensity asymmetry, a local measurement of target asymmetry, and
wherein the lithographic apparatus is arranged to use the local measurement of target asymmetry in applying the pattern to further substrates.
7. A method of measuring a parameter of a lithographic process, comprising:
illuminating a target on a substrate with measurement radiation;
detecting the measurement radiation scattered by the target;
forming an image of the target, said image comprising a plurality of sub-images, each sub-image being formed by a corresponding lens of an array of lenses;
measuring said parameter of a lithographic process from said image;
measuring intensity asymmetry in corresponding higher orders of the scattered measurement radiation from said sub-images; and
determining, from each of the measurements of intensity asymmetry, a local measurement of target asymmetry.
8. The method of claim 7 , wherein said array of lenses is configured as a plurality of similar lenses arranged in a regular 2D array.
9. The method of claim 7 , wherein said image is forming at the image plane defined by said array of lenses.
10. The method of claim 7 , wherein the array of lenses is located at a pupil plane of an optical system used for performing the method.
11. The method of claim 7 , comprising measuring deviation of the positions of said sub-images relative to a regular 2D grid.
12. The method of claim 7 , further comprising:
obtaining, in a single measurement step, a plurality of different values for intensity asymmetry from different corresponding pairs of sub-images of a target comprising a first grating and a second grating,
wherein the target asymmetry of the first grating comprises a structural contribution due to structural asymmetry,
a first imposed target asymmetry and an overlay error and the target asymmetry of the second grating comprises the structural contribution due to structural asymmetry,
a second imposed target asymmetry and the overlay error; and
determining a value for the overlay error from said plurality of different values for intensity asymmetry.
13. The method of claim 7 , further comprising determining whether said optical system is correctly focused based on said deviation of the positions of the sub-images relative to a regular 2D grid.
14. The method of claim 7 , further comprising calculating a pupil image from intensities of the sub-images.
15. The method of claim 14 , further comprising:
determining a phase distribution from said pupil image; and
determining aberrations in the optical system from said phase distribution.
16. The method claim 7 , wherein the target is smaller than a measurement field of the metrology apparatus, such that a measurement of the target also comprises influence from structures adjacent the target; further comprising:
identifying which of said sub-images result from measurement radiation scattered from said structures adjacent the target and which of said sub-images result from measurement radiation scattered from the target; and
reconstructing one or more parameters of the target using only sub-images which result from measurement radiation scattered from the target.
17. The method of claim 7 , wherein the target comprises two or more gratings having different pitches; further comprising identifying which sub-image corresponds to which target by its location within the image.
18. A non-transitory computer readable medium comprising processor readable instructions which, when run on processor controlled apparatus, cause the processor controlled apparatus to perform the method comprising:
illuminating a target on a substrate with measurement radiation;
detecting the measurement radiation scattered by the target;
forming an image of the target, said image comprising a plurality of sub-images, each sub-image being formed by a corresponding lens of an array of lenses;
measuring a parameter of a lithographic process from said image;
measuring intensity asymmetry in corresponding higher orders of the scattered measurement radiation front said sub-images;
determining, from each of the measurements of intensity asymmetry, a local measurement of target asymmetry.
19. The non-transitory computer readable medium of claim 18 , wherein the processor controlled apparatus to perform the method further comprises controlling a lithographic apparatus arranged to use the local measurement of target asymmetry in applying the pattern to further substrates.