Semiconductor device and method of fabricating the same
A method of fabricating a semiconductor device can include forming a channel hole in a vertical stack of alternating insulating and sacrificial layers to form a recess in a substrate. A selectively epitaxial growth can be performed to provide a lower semiconductor pattern in the recess using material of the substrate as a seed and a recess can be formed to penetrate an upper surface of the lower semiconductor pattern via the channel hole.
1. A semiconductor device, comprising:
a stack including insulating layers and gate electrodes alternatingly and repeatedly stacked on a substrate;
a lower semiconductor pattern protruding in a vertical direction from the substrate into the stack;
an upper most portion of the lower semiconductor pattern that has a width that gradually decreases in a direction away from the substrate;
a channel structure vertically penetrating the stack and connected to the lower semiconductor pattern; and
an insulating gapfill pattern inside the channel structure, wherein a bottom surface of the insulating gapfill pattern extends into the lower semiconductor pattern beyond the upper most portion.
2. The device of claim 1 , wherein the lower semiconductor pattern includes a recess region that penetrates the upper portion thereof, and
a lower portion of the channel structure is in the recess region of the lower semiconductor pattern.
3. The device of claim 2 , wherein an upper portion of the channel structure has a first thickness, and
the lower portion of the channel structure has a second thickness that is less than the first thickness.
4. The device of claim 3 , wherein the second thickness is about 10-40% of the first thickness.
5. The device of claim 1 , wherein a lowest one of the gate electrodes comprises a ground selection line and the lower semiconductor pattern passes through the ground selection line.
6. The device of claim 1 , wherein the channel structure comprises a first semiconductor pillar and a second semiconductor pillar,
a bottom surface of the second semiconductor pillar is lower than that of the first semiconductor pillar, and
the second semiconductor pillar contacts the lower semiconductor pattern.
7. The device of claim 1 , further comprising a vertical insulator between the gate electrodes and the channel structure,
wherein the vertical insulator comprises a horizontally extended portion which is between the channel structure and the lower semiconductor pattern, and
the horizontally extended portion is parallel to a top surface of the lower semiconductor pattern and has an inclined profile.
8. The device of claim 7 , wherein the horizontally extended portion directly covers the top surface of the lower semiconductor pattern.
9. The device of claim 7 , wherein the vertical insulator comprises a tunnel insulating layer, a blocking insulating layer, and a charge storing layer between the tunnel insulating layer and the blocking insulating layer,
the tunnel insulating layer is provided to directly cover an outer sidewall of the channel structure, and
the blocking insulating layer directly covers inner sidewalls of the gate electrodes.
10. The device of claim 7 , further comprising blocking insulating layers between the vertical insulator and the gate electrodes,
wherein the vertical insulator comprises:
a tunnel insulating layer directly covering an outer sidewall of the channel structure; and
a charge storing layer between the tunnel insulating layer and the blocking insulating layers.
11. A semiconductor device, comprising:
a stack including insulating layers and gate electrodes alternatingly and repeatedly stacked on a substrate;
a lower semiconductor pattern protruding in a vertical direction from the substrate into the stack;
an upper portion of the lower semiconductor pattern having a width that gradually decreases in a direction away from the substrate;
a channel structure penetrating the stack and connected to the lower semiconductor pattern, a lower portion of the channel structure penetrates the upper portion of the lower semiconductor pattern; and
a vertical insulator between the gate electrodes and the channel structure;
wherein the vertical insulator comprises a horizontally extended portion which is between the channel structure and the lower semiconductor pattern, and
horizontally extended portion is parallel to a top surface of the lower semiconductor pattern and has an inclined profile.
12. The device of claim 11 , wherein a level of a bottom surface of the channel structure is lower than a bottom level of the upper portion of the lower semiconductor pattern.
13. The device of claim 11 , wherein an upper portion of the channel structure has a first thickness, and
the lower portion of the channel structure has a second thickness that is about 10-40% of the first thickness.
14. The device of claim 11 , further comprising an insulating gapfill pattern inside the channel structure,
wherein a bottom surface of the insulating gapfill pattern is lower than a bottom of the upper portion of the lower semiconductor pattern.
15. The device of claim 11 ,
wherein the lower portion of the channel structure passes through the horizontally extended portion and is connected to the lower semiconductor pattern.
16. A semiconductor device, comprising:
a stack including insulating layers and gate electrodes alternatingly and repeatedly stacked on a substrate;
a lower semiconductor pattern protruding in a vertical direction from the substrate into the stack;
a channel structure in the stack and connected to the lower semiconductor pattern; and
an insulating gapfill pattern in the channel structure, wherein the insulating gapfill pattern has a curved bottom surface wherein an upper portion of the lower semiconductor pattern has a width gradually decreasing in a direction away from the substrate, and
a lowermost portion of the curved bottom surface of the insulating gapfill pattern below a bottom of the upper portion of the lower semiconductor pattern.
17. The device of claim 16 , wherein a lower portion of the insulating gapfill pattern has a width gradually decreasing in a direction toward the substrate.
18. The device of claim 17 , wherein the channel structure has a first thickness at a region adjacent to the lower portion of the insulating gapfill pattern,
the channel structure has a second thickness at a region below the lower portion of the insulating gapfill pattern, and
the second thickness is greater than the first thickness.
19. The device of claim 16 , wherein the lower semiconductor pattern has a recess region,
the channel structure comprises a lower portion inserted into the recess region of the lower semiconductor pattern, and
the lower portion of the channel structure has a vertically-varying thickness.