Semiconductor constructions and memory arrays
Some embodiments include semiconductor constructions having an electrically conductive interconnect with an upper surface, and having an electrically conductive structure over the interconnect. The structure includes a horizontal first portion along the upper surface and a non-horizontal second portion joined to the first portion at a corner. The second portion has an upper edge. The upper edge is offset relative to the upper surface of the interconnect so that the upper edge is not directly over said upper surface. Some embodiments include memory arrays.
1. A semiconductor construction, comprising:
conductive interconnects having upper surfaces;
conductive structures over the conductive interconnects; the conductive structures being paired with the conductive interconnects to form structure/interconnect configurations; the conductive structures having horizontal first portions joining to non-horizontal second portions at corners of about 90°; the horizontal first portions comprising regions along upper surfaces of the conductive interconnects; the non-horizontal second portions having upper edges above the horizontal first portions; and
at least one of the structure/interconnect configurations comprising the upper edge of the non-horizontal second portion laterally offset relative to the upper surface of the conductive interconnect so that the upper edge of the non-horizontal second portion of said at least one structure/interconnect configuration is not directly over the upper surface of the conductive interconnect of said at least one structure/interconnect configuration.
2. The construction of claim 1 wherein the conductive structures are comprised by two populations, with one of the populations having the upper edges of the non-horizontal second portions directly over upper surfaces of the conductive interconnects, and the other of the populations having the upper edges of the non-horizontal second portions not directly over upper surfaces of the conductive interconnects.
3. The construction of claim 1 wherein the conductive structures comprise different material from the conductive interconnects.
4. The construction of claim 1 wherein the upper edges of the non-horizontal second portions are not directly over the upper surfaces of the conductive interconnects.
5. The construction of claim 1 wherein the conductive structures comprise titanium.
6. The construction of claim 1 wherein the conductive structures comprise titanium and nitrogen.
7. The construction of claim 1 wherein the conductive interconnects comprise one or both of tungsten and silicon.
8. A memory array, comprising:
a plurality of electrically conductive interconnects having upper surfaces, the interconnects being spaced from one another by alternating large and small gaps along a cross-section;
angled plate structures over the interconnects; the angled plate structures having horizontal first portions joining to second portions; the horizontal first portions comprising regions along upper surfaces of the interconnects, the second portions having upper edges that are offset relative to the upper surfaces of the interconnects so that the upper edges are not directly over the upper surfaces; wherein the upper edges are spaced from one another by a same dimension along the cross-section; and
memory material directly against the upper edges of the angled plate structures.
9. The memory array of claim 8 wherein the angled plate structures comprise different material than the interconnects.
10. The memory array of claim 8 wherein the angled plate structures comprise titanium; wherein the interconnects comprises one or both of tungsten and silicon; and wherein the memory material comprises germanium, antimony and tellurium.
11. The memory array of claim 8 wherein the angled plate structures have angles of at least about 90° between the first and second portions.
12. The memory array of claim 8 wherein the angled plate structures are L-shaped plates, with the horizontal first portions being short legs of the L-shapes and the second portions being long vertical legs of the L-shapes.
13. The memory array of claim 8 wherein the upper surfaces have widths along a cross-section, and wherein the horizontal first portions are across entireties of said widths.
14. The memory array of claim 8 wherein the upper surfaces have widths along a cross-section, and wherein the horizontal first portions are not across entireties of said widths.
15. The memory array of claim 8 wherein the memory material is chalcogenide material.
16. The memory array of claim 8 in which the angled plate structures comprise a first population and a second population; the second portions of the angled plate structures of the first population being offset in an opposite direction relative to the second portions of the angled plate structures of the second population.
17. The memory array of claim 16 wherein the memory material comprises chalcogenide.
18. The memory array of claim 16 wherein the memory material comprises germanium, antimony and tellurium.