Imaging device having a light shielding structure
A solid-state imaging device includes a plurality of pixels each of which includes a photoelectric conversion unit that generates charges by photoelectrically converting light, and a transistor that reads a pixel signal of a level corresponding to the charges generated in the photoelectric conversion unit. A phase difference pixel which is at least a part of the plurality of pixels is configured in such a manner that the photoelectric conversion unit is divided into a plurality of photoelectric conversion units and an insulated light shielding film is embedded in a region for separating the plurality of photoelectric conversion units, which are divided, from each other.
1. An imaging device comprising:
a pixel array unit including a first pixel and a second pixel; and
a column processing unit,
wherein each of the first pixel and the second pixel includes:
a microlens;
a floating diffusion region; and
a photoelectric conversion region configured to receive light through the microlens and coupled to the floating diffusion region,
wherein a light incident surface of the photoelectric conversion region of the first pixel is divided into four parts by a light shielding structure formed in a trench and including a first portion extending between first and second opposite sides of the first pixel and a second portion extending between third and fourth opposite sides of the first pixel, and wherein the first and second portions are perpendicular to each other in plan view.
2. The imaging device according to claim 1 ,
wherein a light incident surface of the photoelectric conversion region of the second pixel is not divided into four parts by a light shielding structure.
3. The imaging device according to claim 1 ,
wherein sizes of the divided four parts are set unevenly.
4. The imaging device according to claim 1 ,
wherein the first pixel is closer to a center of the pixel array unit than the second pixel is,
wherein a part of the light shielding structure of the first pixel is arranged at a first distance from a center of the first pixel,
wherein a part of the light shielding structure of the second pixel is arranged at a second distance from a center of the second pixel, and
wherein the second distance is larger than the first distance.
5. The imaging device according to claim 1 , wherein the light shielding structure includes a metal material.
6. The imaging device according to claim 1 , wherein the first pixel includes four photodiodes, and wherein the light shielding structure separates the four photodiodes of the first pixel from each other.
7. An imaging device comprising:
a pixel array unit including a first pixel and a second pixel; and
a column processing unit,
wherein each of the first pixel and the second pixel includes:
a microlens;
a floating diffusion region; and
a photoelectric conversion region configured to receive light through the microlens and coupled to the floating diffusion region,
wherein a light incident surface of the photoelectric conversion region of the first pixel is divided into four parts by a light shielding structure formed in a trench having a cross shape in a plan view.
8. The imaging device according to claim 7 ,
wherein a light incident surface of the photoelectric conversion region of the second pixel is not divided into four parts by a trench.
9. The imaging device according to claim 7 ,
wherein sizes of the divided four parts are set unevenly.
10. The imaging device according to claim 7 ,
wherein the first pixel is closer to a center of the pixel array unit than the second pixel is,
wherein a part of the trench of the first pixel is arranged at a first distance from a center of the first pixel,
wherein a part of the trench of the second pixel is arranged at a second distance from a center of the second pixel, and
wherein the second distance is larger than the first distance.
11. The imaging device according to claim 7 , wherein a metal material is disposed in the trench.
12. The imaging device according to claim 7 , wherein the first pixel includes four photodiodes, and wherein the light shielding structure separates the four photodiodes of the first pixel from each other.
13. An imaging device comprising:
a pixel array unit including a first pixel and a second pixel; and
a column processing unit,
wherein each of the first pixel and the second pixel includes:
a microlens;
a floating diffusion region; and
a photoelectric conversion region configured to receive light through the microlens and coupled to the floating diffusion region,
wherein a light incident surface of the photoelectric conversion region of the first pixel is divided into four parts by a light shielding structure formed in a trench having a square with cross in the center shape.
14. The imaging device according to claim 13 ,
wherein a light incident surface of the photoelectric conversion region of the second pixel is not divided into four parts by a trench.
15. The imaging device according to claim 13 ,
wherein sizes of the divided four parts are set unevenly.
16. The imaging device according to claim 13 ,
wherein the first pixel is closer to a center of the pixel array unit than the second pixel is,
wherein a part of the trench of the first pixel is arranged at a first distance from a center of the first pixel,
wherein a part of a trench of the second pixel is arranged at a second distance from a center of the second pixel, and
wherein the second distance is larger than the first distance.
17. The imaging device according to claim 13 , wherein a metal material is disposed in the trench.
18. The imaging device according to claim 13 , wherein the first pixel includes four photodiodes, and wherein the light shielding structure separates the four photodiodes of the first pixel from each other.