Aqueous compositions of low abrasive silica particles
View Patent ↗The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions having a pH ranging from 2.5 to 5.3 and comprising a mixture of spherical colloidal silica particles and from 30 to 99 wt. %, based on the total weight of silica solids in the aqueous CMP polishing composition, of elongated, bent or nodular silica particles wherein the colloidal and elongated, bent or nodular silica particles differ from each other in weight average particle size (CPS) less than 20 nm, wherein at least one of the spherical colloidal silica particles and the elongated, bent or nodular silica particles contains one or more cationic nitrogen atoms. The present invention further provides methods of using the compositions in high downforce CMP polishing applications.
1. An aqueous chemical mechanical planarization (CMP) polishing composition comprising a mixture of spherical colloidal silica and elongated, bent or nodular silica particles that differ from each other in weight average particle size (CPS) less than 20 nm, the composition having a pH ranging from 2.5 to 5.3, wherein at least one of the spherical colloidal silica particles and the elongated, bent or nodular silica particles contains one or more cationic nitrogen atoms, and, further wherein, the amount of the elongated, bent or nodular silica particles ranges from 30 to 99 wt. %, based on the total weight of silica solids in the aqueous CMP polishing composition.
2. The aqueous CMP polishing composition as claimed in claim 1 , wherein the amount of the elongated, bent or nodular silica particles ranges from 40 to 90 wt. %, based on the total weight of silica solids in the aqueous CMP polishing composition.
3. The aqueous CMP polishing composition as claimed in claim 1 , wherein the one or more cationic nitrogen atoms comes from a protonated amine or quaternary ammonium that is contained within the elongated, bent or nodular silica particles and as well from an aminosilane that contains one or more cationic nitrogen atom at the pH of the aqueous CMP polishing composition, whereby at least one of the spherical colloidal silica particles or the elongated, bent or nodular silica particles are aminosilane group containing silica particles.
4. The aqueous CMP polishing composition as claimed in claim 3 , wherein the aminosilane is chosen from an aminosilane containing one or more tertiary amine group, or one or more secondary amine group.
5. The aqueous CMP polishing composition as claimed in claim 4 , wherein the one or more cationic nitrogen atoms in the at least one elongated, bent or nodular silica particles is incorporated by hydrolytic condensation of silanols with alkylammonium hydroxides or alkylamines in aqueous suspension.
6. The aqueous CMP polishing composition as claimed in claim 1 , further comprising a compound containing two quaternary ammonium groups.
7. The aqueous CMP polishing composition as claimed in claim 6 , wherein the amount of the compound containing two quaternary ammonium groups ranges from 1 to 2000 ppm, based on the total silica solids in the aqueous CMP polishing composition.
8. The aqueous CMP polishing composition as claimed in claim 1 , wherein the weight average particle sizes (CPS) of the silica particles ranges from 10 nm to 200 nm.
9. The aqueous CMP polishing composition as claimed in claim 1 , further comprising a buffer, which is a carboxylate of a (di)carboxylic acid pKa of 3 to 7 in the amount of from 0 to 50 millimoles per kg (mm/kg) of the total (wet) composition.
10. The aqueous CMP polishing composition as claimed in claim 1 , wherein the total amount of silica particles ranges from 1 to 30 wt. %, based on the total weight of the composition.
11. The aqueous CMP polishing composition as claimed in claim 1 , wherein at least one of the elongated, bent or nodular silica particles contains within the particle one or more cationic nitrogen atoms that comes from a protonated amine or quaternary ammonium.