Bonding wire for semiconductor device
There is provided a bonding wire that improves bonding reliability of a ball bonded part and ball formability and is suitable for on-vehicle devices. The bonding wire for a semiconductor includes a Cu alloy core material, and a Pd coating layer formed on a surface of the Cu alloy core material, and is characterized in that the Cu alloy core material contains Ni, a concentration of Ni is 0.1 to 1.2 wt. % relative to the entire wire, and a thickness of the Pd coating layer is 0.015 to 0.150 μm.
1. A bonding wire for a semiconductor device comprising:
a Cu alloy core material; and
a Pd coating layer formed on a surface of the Cu alloy core material, the Pd coating layer having a Pd concentration of 50 at. % or more, wherein
the Cu alloy core material contains Ni,
a concentration of Ni is 0.1 to 1.2 wt. % relative to the entire wire, and
a thickness of the Pd coating layer is 0.016 to 0.150 μm.
2. The bonding wire for a semiconductor device according to claim 1 , further comprising an Au skin layer on the Pd coating layer.
3. The bonding wire for a semiconductor device according to claim 2 , wherein a thickness of the Au skin layer is 0.0005 to 0.050 μm.
4. The bonding wire for a semiconductor device according to claim 1 , wherein
the Cu alloy core material further contains at least one element selected from B, In, Ca, P and Ti, and
a concentration of the elements is 3 to 100 wt. ppm relative to the entire wire.
5. The bonding wire for a semiconductor device according to claim 1 , wherein
the Cu alloy core material further contains Pt or Pd, and
a concentration of Pt or Pd contained in the Cu alloy core material is 0.05 to 1.20 wt. %.
6. The bonding wire for a semiconductor device according to claim 1 , wherein Cu is present at an outermost surface of the bonding wire.
7. A bonding wire for ball bonding, comprising:
a Cu alloy core material; and
a Pd coating layer formed on a surface of the Cu alloy core material, the Pd coating layer having a Pd concentration of 50 at. % or more, wherein
the Cu alloy core material contains Ni,
a concentration of Ni is 0.1 to 1.2 wt. % relative to the entire wire,
a thickness of the Pd coating layer is 0.016 to 0.150 μm, and
a ball to be formed when the ball bonding is performed comprises an alloy containing Pd, Cu and Ni.
8. A bonding wire for a semiconductor device comprising:
a Cu alloy core material; and
a Pd coating layer formed on a surface of the Cu alloy core material, the Pd coating layer having a Pd concentration of 50 at. % or more, wherein
the Cu alloy core material contains Ni,
a concentration of Ni is 0.1 to 1.2 wt. % relative to the entire wire,
a thickness of the Pd coating layer is 0.016 to 0.150 μm, and
the Cu alloy core material contains 3 to 100 wt. ppm of P relative to the entire wire.