Layered body of temporary adhesive
A temporary adhesive is good peelability, heat resistance and cleaning removability after polishing of the rear surface of the wafer. A layered body for processing a rear surface of a wafer opposite to a circuit surface of the wafer, the layered body being a temporary adhesive loaded between a support and circuit surface of the wafer and including an adhesive layer (A) that includes a polyorganosiloxane to be cured by a hydrosilylation reaction and is releasably bonded, and a separation layer (B) includes a polyorganosiloxane and is releasably bonded, in which the polyorganosiloxane forming the separation layer (B) is a polyorganosiloxane containing a siloxane unit of RRSiO 2/2 (provided that each R is bonded to a silicon atom as a Si—C bond), and at least one R is an aralkyl group, epoxy group, or phenyl group. Methods for producing and separating these layered bodies and composition for forming the separation layer.
1. A layered body for processing a rear surface of a wafer opposite to a circuit surface of the wafer, the layered body being a temporary adhesive loaded between a support and the circuit surface of the wafer and comprising an adhesive layer (A) that includes a polyorganosiloxane to be cured by a hydrosilylation reaction and is releasably bonded and a separation layer (B) that includes a polyorganosiloxane and is releasably bonded, wherein
the adhesive layer (A) contains a polyorganosiloxane (a1) containing a polysiloxane having at least one unit selected from the group consisting of a siloxane unit (Q unit) of SiO 2 , a siloxane unit (M unit) of R 1 R 2 R 3 SiO 1/2 , a siloxane unit (D unit) of R 4 R 5 SiO 2/2 , and a siloxane unit (T unit) of R 6 SiO 3/2 provided that R 1 to R 6 are each bonded to a silicon atom as a Si—C bond except that when any of R 1 to R 6 are hydrogen, the bond is a Si—H bond in which any one or more of R 1 to R 6 is a C 1-10 alkyl group and any one or more of R 1 to R 6 is a C 2-10 alkenyl group, and a polyorganosiloxane (a2) containing the polysiloxane in which any one or more of R 1 to R 6 is a C 1-10 alkyl groups and any one or more of R 1 to R 6 is a hydrogen atom, and
the separation layer (B) contains a polyorganosiloxane containing a siloxane unit (D unit) of R 7 R 8 SiO 2/2 provided that R 7 and R 8 are each bonded to a silicon atom as a Si—C bond, and the polyorganosiloxane is a copolymer (b1) containing repeating units in which R 7 and R 8 are a methyl group and a C 7-40 aralkyl group, respectively, and repeating units in which R 7 and R 8 are a methyl group and a C 1-10 alkyl group, respectively.
2. The layered body according to claim 1 , wherein
the separation layer (B) additionally contains a polyorganosiloxane containing a siloxane unit (D unit) of R 9 R 10 SiO 2/2 provided that R 9 and R 10 are each bonded to a silicon atom as a Si—C bond, and the polyorganosiloxane is a copolymer (b2) containing repeating units in which R 9 and R 10 are a methyl group and an epoxycyclohexylalkyl group, respectively, and repeating units in which R 9 and R 10 are each a methyl group.
3. The layered body according to claim 1 , wherein
the separation layer (B) additionally contains a polyorganosiloxane containing a siloxane unit (D unit) of R 11 R 12 SiO 2/2 provided that R 11 and R 12 are each bonded to a silicon atom as a Si—C bond, and the polyorganosiloxane is a copolymer (b3) containing repeating units in which R 11 and R 12 are each a phenyl group and repeating units in which R 11 and R 12 are each a methyl group.
4. The layered body according to claim 1 , wherein
the separation layer (B) additionally contains a polydimethylsiloxane (b4).
5. The layered body according to claim 1 , which is a layered body (S) comprising the adhesive layer (A) on the support and the separation layer (B) as a first separation layer (B1) on the circuit surface of the wafer.
6. The layered body (S) according to claim 5 , further comprising the separation layer (B) as a second separation layer (B2) between the support and the adhesive layer (A).
7. A method for producing the layered body (S) according to claim 6 comprising forming the second separation layer (B2) on the support, forming the adhesive layer (A) on the layer, forming the first separation layer (B1) on the circuit surface of the wafer by coating, and joining the support to the wafer so that the adhesive layer (A) and the first separation layer (B1) face each other.
8. A method for separating the layered body (S) according to claim 6 comprising, after the second separation layer (B2) is formed on the support, the adhesive layer (A) is formed on the layer, the first separation layer (B1) is formed on the circuit surface of the wafer by coating, and the support is jointed to the wafer so that the adhesive layer (A) and the first separation layer (B1) face each other, polishing the rear surface of the wafer opposite to the circuit surface of the wafer, and separating the support from the wafer in the first separation layer (B1) and/or the second separation layer (B2).
9. A method for producing the layered body (S) according to claim 5 comprising forming the adhesive layer (A) on the support, forming the first separation layer (B1) on the circuit surface of the wafer by coating, and joining the support to the wafer so that the adhesive layer (A) and the first separation layer (B1) face each other.
10. A method for producing the layered body (S) according to claim 5 comprising forming the adhesive layer (A) on the support, forming the first separation layer (B1) on the layer, and layering the wafer on the first separation layer (B1) so that the first separation layer (B1) and the circuit surface face each other, followed by joining.
11. A method for separating the layered body (S) according to claim 5 comprising, after the adhesive layer (A) is formed on the support, the first separation layer (B1) is formed on the circuit surface of the wafer by coating, and the support is jointed to the wafer so that the adhesive layer (A) and the first separation layer (B1) face each other, polishing the rear surface of the wafer opposite to the circuit surface of the wafer, and separating the support from the wafer in the first separation layer (B1).
12. A method for separating the layered body (S) according to claim 5 comprising, after the adhesive layer (A) is formed on the support, the first separation layer (B1) is formed on the layer, and the circuit surface of the wafer is layered on and jointed to the layer, polishing the rear surface of the wafer opposite to the circuit surface of the wafer, and separating the support from the wafer in the first separation layer (B1).
13. The layered body according to claim 1 , which is a layered body (T) comprising the adhesive layer (A) on the circuit surface of the wafer and the separation layer (B) as a first separation layer (B1) on the support.
14. A method for producing the layered body (T) according to claim 13 comprising forming the first separation layer (B1) on the support, forming the adhesive layer (A) on the circuit surface of the wafer by coating, and joining the support to the wafer so that the adhesive layer (A) and the first separation layer (B1) face each other.
15. A method for producing the layered body (T) according to claim 13 comprising forming the first separation layer (B1) on the support, forming the adhesive layer (A) on the layer, and layering the wafer on the adhesive layer (A) so that the adhesive layer (A) and the circuit surface face each other, followed by joining.
16. A method for separating the layered body (T) according to claim 13 comprising, after the first separation layer (B1) is formed on the support, the adhesive layer (A) is formed on the circuit surface of the wafer by coating, and the support is jointed to the wafer so that the adhesive layer (A) and the first separation layer (B1) face each other, polishing the rear surface of the wafer opposite to the circuit surface of the wafer, and separating the wafer from the support in the first separation layer (B1).
17. A method for separating the layered body (T) according to claim 13 comprising, after the first separation layer (B1) is formed on the support, the adhesive layer (A) is formed on the layer, and the circuit surface of the wafer is layered on and jointed to the layer, polishing the rear surface of the wafer opposite to the circuit surface of the wafer, and separating the wafer from the support in the first separation layer (B1).
18. The layered body according to claim 1 , wherein
in the polyorganosiloxane (a1), the C 1-10 alkyl group is a methyl group, and the C 2-10 alkenyl group is an ethenyl group, and
in the polyorganosiloxane (a2), the C 1-10 alkyl group is a methyl group, and the hydrogen atom forms a Si—H structure.
19. The layered body according to claim 1 , wherein a content of the alkenyl group in all substituents of R 1 to R 6 is 0.1% by mole to 50.0% by mole, a content of the hydrogen atom forming a Si—H group in all the substituents of R 1 to R 6 is be 0.1% by mole to 50.0% by mole, and a remainder of R 1 to R 6 is an alkyl group.
20. The layered body according to claim 1 , wherein in the polyorganosiloxanes (a1) and (a2), a molar ratio of the alkenyl group to the hydrogen atom forming a Si—H group is within a range of 2.0:1.0 to 1.0:1.0.
21. A composition comprising a polyorganosiloxane containing a siloxane unit (D unit) of R 7 R 8 SiO 2/2 provided that R 7 and R 8 are each bonded to a silicon atom as a Si—C bond, and the polyorganosiloxane is a copolymer (b1) containing repeating units in which R 7 and R 8 are a methyl group and a C 7-40 aralkyl group, respectively, and repeating units in which R 7 and R 8 are a methyl group and a C 1-10 alkyl group, respectively.