Polishing liquid for CMP, polishing liquid set for CMP, and polishing method
View Patent ↗One embodiment of the present invention relates to a polishing liquid for CMP containing cerium oxide particles and water, wherein the half-value width of the main peak appearing within a range from 2θ=27.000 to 29.980° in a powder X-ray diffraction chart of the cerium oxide particles is from 0.26 to 0.36°, the average particle size of the cerium oxide particles is at least 130 nm but less than 175 nm, and the number of cerium oxide particles having a particle size of 1.15 μm or greater is 5000×10 3 /mL or less.
1. A polishing liquid for CMP comprising cerium oxide particles and water, wherein
a powder X-ray diffraction chart of the cerium oxide particles includes a main peak appearing within a range from 2θ=27.000 to 29.980°,
the main peak is a peak of cerium oxide,
a half-value width of the main peak is from 0.26 to 0.36°,
an average particle size of the cerium oxide particles is at least 130 nm but less than 175 nm, and
a number of cerium oxide particles having a particle size of 1.15 μm or greater is not more than 5,000×10 3 particles/mL.
2. The polishing liquid for CMP according to claim 1 , further comprising a water-soluble polymer.
3. A polishing liquid set for CMP that is used for obtaining the polishing liquid for CMP according to claim 2 ,
the polishing liquid set for CMP comprising a first liquid containing cerium oxide particles and water, and a second liquid containing a water-soluble polymer and water.
4. A method for polishing a substrate having an insulating material formed thereon, the method comprising removing an unnecessary portion of the insulating material using the polishing liquid for CMP according to claim 1 .
5. A method for polishing a substrate having an insulating material formed thereon, the method comprising removing an unnecessary portion of the insulating material using a polishing liquid for CMP obtained using the polishing liquid set for CMP according to claim 3 .
6. A method for polishing a substrate having an insulating material formed thereon, the method comprising removing an unnecessary portion of the insulating material using the polishing liquid for CMP according to claim 2 .