Resist underlayer film-forming composition
The present invention provides a novel resist underlayer film-forming composition capable of forming a resist underlayer film that has etching resistance and excellent embeddability in a surface having concave portions and/or convex portions. A resist underlayer film-forming composition comprising a polymer having a structural unit represented by formula (1) or formula (2): (wherein X is an arylene group, n is 1 or 2, and R 1 , R 2 , R 3 , and R 4 are each independently a hydrogen atom, a hydroxy group, a C 1-3 alkyl group, or a phenyl group), and a solvent.
1. A resist underlayer film-forming composition comprising a polymer having a structural unit of the following Formula (1):
wherein X is an arylene group, n is 1 or 2, and R 1 , R 2 , R 3 , and R 4 are each independently a hydrogen atom, a hydroxy group, a C 1-3 alkyl group, or a phenyl group, and a solvent.
2. The resist underlayer film-forming composition according to claim 1 , wherein the arylene group is a phenylene group or a naphthylene group.
3. The resist underlayer film-forming composition according to claim 1 , further comprising a crosslinker.
4. The resist underlayer film-forming composition according to claim 3 , further comprising an acidic compound that promotes a cross-linking reaction.
5. The resist underlayer film-forming composition according to claim 1 , further comprising a surfactant.
6. The resist underlayer film-forming composition according to claim 3 , wherein the crosslinker comprises at least two crosslink-forming substituents.
7. The resist underlayer film-forming composition according to claim 1 , wherein a ratio of the solid content of the resist underlayer film-forming composition, except for the organic solvent is, 0.5% by mass to 30% by mass.
8. The resist underlayer film-forming composition according to claim 1 , wherein a weight average molecular weight of the polymer is 1,000 to 10,000 in terms of standard polystyrene.
9. The resist underlayer film-forming composition according to claim 3 , wherein a content of the crosslinker is 2% by mass to 60% by mass relative to a solid content of the resist underlayer film-forming composition, except for the solvent.
10. The resist underlayer film-forming composition according to claim 4 , wherein a content of the acidic compound is 0.1% by mass to 20% by mass relative to the solid content of the resist underlayer film-forming composition, except for the solvent.
11. The resist underlayer film-forming composition according to claim 5 , wherein a content of the surfactant is 0.01% by mass to 5% by mass relative to the solid content of the resist underlayer film-forming composition, except for the solvent.