IP Library Granted Patent US 12,724,347
Granted Patent B2
US 12,724,347 · App. 17/916,307 · Granted Sep 1, 2026

Composition for forming resist underlayer film

Inventors: Hiroto Ogata (Toyama, JP); Tomotada Hirohara (Toyama, JP); Hirokazu Nishimaki (Toyama, JP); Makoto Nakajima (Toyama, JP)
Assignee: NISSAN CHEMICAL CORPORATION
G03F7/11C08G63/20C09D167/03H10P76/2041G03F7/091G03F7/094G03F7/20G03F7/26
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Quick Facts
Patent No.
US 12,724,347
App. No.
17/916,307
Granted
Sep 1, 2026
Kind
B2
Abstract

A composition for forming a resist underlayer film which enables to form a flat film with a favorable coating even on a so-called stepped substrate and a small film thickness difference after embedding, and also a polymer as an important component of the composition for forming a resist underlayer film, a resist underlayer film formed using the composition for forming a resist underlayer film, and a method of producing a semiconductor device. The composition for forming a resist underlayer film, includes a compound of the following Formula (1) and a solvent: (wherein, Ar 1 , Ar 2 , Ar 3 and Ar 4 are each independently a substitutable monovalent aromatic hydrocarbon group, a, b, c, and d are each 0 or 1, and a+b+c+d=1).

Claims (11)

1 . A composition for forming a resist underlayer film, the composition comprising a compound of the following Formula (1) and a solvent:

wherein, Ar 1 , Ar 2 , Ar 3 and Ar 4 are each independently an aromatic hydrocarbon group selected from the group consisting of a phenyl group, a naphthyl group, an anthracenyl group, a pyrenyl group and combinations thereof, each being unsubstituted.

2 . The composition for forming a resist underlayer film according to claim 1 ,

wherein the solvent is a solvent having a boiling point of 160° C. or higher.

3 . A resist underlayer film which is a baked product of a coating film composed of the composition for forming a resist underlayer film according to claim 1 .

4 . A method of producing a semiconductor device, comprising:

a step of forming a resist underlayer film using the composition for forming a resist underlayer film according to claim 1 on a semiconductor substrate;

a step of forming a resist film on the formed resist underlayer film;

a step of forming a resist pattern by emitting light or an electron beam to the formed resist film and performing development;

a step of etching and patterning the resist underlayer film with the formed resist pattern; and

a step of processing the semiconductor substrate with the patterned resist underlayer film.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 30, 2022
From: OGATA, HIROTO; HIROHARA, TOMOTADA; NISHIMAKI, HIROKAZU; NAKAJIMA, MAKOTO
To: NISSAN CHEMICAL CORPORATION
Reel/Frame 061273/0381 →
Priority Claims (1)
JP 2020-060494 · Mar 30, 2020 · national
Continuity (1)
Related Publication 20230137360A1 · May 4, 2023
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