Stepped substrate coating composition including compound having photocrosslinking group due to unsaturated bond between carbon atoms
A stepped substrate coating composition includes: a compound (E) containing partial structures (I) and (II) and a solvent (F). The partial structure (II) contains a hydroxy group generated by an epoxy group and a proton-generating compound reaction; the partial structure (I) is at least one partial structure selected from partial structures of Formula (1-1) to Formula (1-5) or a partial structure combining a partial structure of Formula (1-6) and Formula (1-7) or Formula (1-8); and the partial structure (II) is a partial structure of Formula (2-1) or Formula (2-2). The photocurable stepped substrate coating composition wherein in the compound (E), the epoxy group and the hydroxy group are contained in a molar ratio of 0≤(Epoxy group)/(Hydroxy group)≤0.5 and the partial structure (II) is contained in a molar ratio of 0.01≤(Partial structure (II))/(Partial structure (I)+Partial structure (II))≤0.8.
1 . A photocurable stepped substrate coating composition comprising a compound (E) and a solvent (F), wherein the compound (E) is selected from the group consisting of:
and when compound (E) has formula (E-17), the proportion of the unit structure (E-17-1) and the unit structure (E-17-2) is in a molar ratio of 60:40,
wherein the coating composition does not contain an acid catalyst.
2 . The photocurable stepped substrate coating composition according to claim 1 , wherein the stepped substrate coating composition is a resist underlayer film-forming composition used in a lithography process for producing a semiconductor device.
3 . A method for producing a coated substrate, the method comprising:
(i) applying the photocurable stepped substrate coating composition as claimed in claim 1 to a substrate having a step, and
(ii) performing exposure of the applied composition to light,
wherein Bias (coating step) between the open area and the pattern areas is 1 nm to 50 nm.
4 . The method for producing a coated substrate according to claim 3 , further comprising (ia) heating the applied composition at 70° C. to 400° C. for 10 seconds to 5 minutes after the step (i) of applying the photocurable stepped substrate coating composition.
5 . The method for producing a coated substrate according to claim 3 , wherein the exposure wavelength in the step (ii) is 150 nm to 248 nm.
6 . The method for producing a coated substrate according to claim 3 , wherein the exposure amount in the step (ii) is 10 mJ/cm 2 to 3,000 mJ/cm 2 .
7 . The method for producing a coated substrate according to claim 3 , wherein the substrate has an open area (non-pattern area) and pattern areas of DENCE (dense) and ISO (coarse) and an aspect ratio of the pattern is 0.1 to 10.
8 . A method for producing a semiconductor device, the method comprising:
forming an underlayer film using the stepped substrate coating composition as claimed in claim 1 on a substrate having a step;
forming a resist film thereon;
forming a resist pattern by irradiation with light or electron beams and development;
etching the underlayer film using the formed resist pattern; and
processing the semiconductor substrate using the patterned underlayer film.
9 . The method for producing a semiconductor device according to claim 8 , wherein the substrate having a step is a substrate having an open area (non-pattern area) and pattern areas of DENCE (dense) and ISO (coarse) and having an aspect ratio of the pattern of 0.1 to 10.
10 . The method for producing a semiconductor device according to claim 8 , wherein the step of forming an underlayer film using the stepped substrate coating composition comprises (i) applying the photocurable stepped substrate coating composition to a substrate having a step, and (ii) performing exposure of the applied composition to light.
11 . The method for producing a semiconductor device according to claim 10 , further comprising (ia) heating the applied composition at 70° C. to 400° C. for 10 seconds to 5 minutes after the step (i) of applying the photocurable stepped substrate coating composition.
12 . The method for producing a semiconductor device according to claim 10 , wherein the exposure wavelength in the step (ii) is 150 nm to 248 nm.
13 . The method for producing a semiconductor device according to claim 10 , wherein the exposure amount in the step (ii) is 10 mJ/cm 2 to 3,000 mJ/cm 2 .
14 . The method for producing a semiconductor device according to claim 8 , wherein the underlayer film obtained from the stepped substrate coating composition has a coating step of 1 nm to 50 nm.
15 . A method for producing a semiconductor device, the method comprising:
forming an underlayer film using the photocurable stepped substrate coating composition as claimed in claim 1 on a substrate having a step;
forming a hard mask thereon;
further forming a resist film thereon;
forming a resist pattern by irradiation of light or electron beams and development;
etching the hard mask using the formed resist pattern;
etching the underlayer film using the patterned hard mask; and
processing a semiconductor substrate using the patterned underlayer film.
16 . The method for producing a semiconductor device according to claim 15 , wherein the substrate having a step is a substrate having an open area (non-pattern area) and pattern areas of DENCE (dense) and ISO (coarse) and having an aspect ratio of the pattern of 0.1 to 10.
17 . The method for producing a semiconductor device according to claim 15 , wherein the step of forming an underlayer film using the stepped substrate coating composition comprises (i) applying the photocurable stepped substrate coating composition to a substrate having a step, and (ii) performing exposure of the applied composition to light.
18 . The method for producing a semiconductor device according to claim 17 , further comprising (ia) heating the applied composition at 70° C. to 400° C. for 10 seconds to 5 minutes after the step (i) of applying the photocurable stepped substrate coating composition.
19 . The method for producing a semiconductor device according to claim 17 , wherein the exposure wavelength in the step (ii) is 150 nm to 248 nm.
20 . The method for producing a semiconductor device according to claim 17 , wherein the exposure amount in the step (ii) is 10 mJ/cm 2 to 3,000 mJ/cm 2 .
21 . The method for producing a semiconductor device according to claim 15 , wherein the underlayer film obtained from the stepped substrate coating composition has a coating step of 1 nm to 50 nm.