Membranes for use within a lithographic apparatus and a lithographic apparatus comprising such a membrane
A membrane transmissive to EUV radiation, which may be used as a pellicle or spectral filter in a lithographic apparatus. The membrane includes one or more high doped regions wherein the membrane is doped with a dopant concentration greater than 10 17 cm −3 , and one or more regions with low (or no) doping. The membrane may have a main substrate having low doping and one or more additional layers, wherein the high doped regions are comprised within some or all of the additional layers.
1. A membrane transmissive to EUV radiation, the membrane comprising:
one or more high doped regions where the membrane is doped with a high dopant concentration; and
one or more low doped regions where the membrane has no doping or a low dopant concentration,
wherein a high dopant concentration is defined as dopant concentration greater than 10 17 cm −3 and a low dopant concentration is defined as a dopant concentration less than 10 17 cm −3 , and
wherein IR emissivity of the one or more high doped regions is larger than IR emissivity of the one or more low doped regions.
2. A membrane as claimed in claim 1 , wherein a main substrate supports the one or more high doped regions and one or more low doped regions, is comprised of a poly-Si material.
3. A membrane as claimed in claim 1 , comprising a plurality of additional features on one or both surfaces of the membrane which are operable to increase transverse heat transfer.
4. A membrane for a lithographic apparatus, the membrane comprising:
a core layer of a thickness 60 nm or less, the core layer comprising a material, substantially transparent for radiation at an EUV wavelength, selected from: (poly-)Si, Si 3 N 4 , SiC, ZrN, ZrB 2 , ZrC, MoB 2 , MoC, RuB 2 , LaB 2 , LaC, TiB 2 , TiC, (poly-)crystalline Yttrium, (poly-)crystalline Zr, Be, C, B or B 4 C, and
a cap layer for improved IR emissivity comprising a material which absorbs IR radiation and having a layer thickness of 20 nm or less,
wherein combination of at least the core layer and cap layer of the membrane has IR radiation emissivity of at least 0.1 and is transmissive to 85% or more of radiation at the EUV wavelength.
5. A membrane according to claim 4 , wherein the membrane has a cap layer—core layer—cap layer sandwich-like configuration.
6. A membrane according to claim 4 , wherein the membrane has a core layer—cap layer—core layer sandwich-like configuration.
7. A membrane according to claim 4 , wherein the core layer is a multilayer stack comprising one or more layers selected from: (poly-)Si, Si 3 N 4 , SiC, ZrN, ZrB 2 , ZrC, MoB 2 , MoC, RuB 2 , LaB 2 , LaC, TiB 2 , TiC, (poly-)crystalline Yttrium, (poly-)crystalline Zr, Be, C, B or B 4 C.
8. A membrane according to claim 4 , wherein the core layer material is a composite material comprising a metal and non-metallic EUV transparent impurities dispersed therein.
9. A membrane according to claim 4 , wherein the cap layer for improved IR emissivity is a metal layer.
10. A membrane according to claim 9 , wherein the metal cap layer has a thickness D=nλ/2, with n being an integer equal to 3 or more and λbeing a wavelength of the EUV radiation used for lithographic exposure.
11. A membrane according to claim 4 , wherein the EUV membrane comprises two metal cap layers for improved IR emissivity separated by a core layer, the cap and core layers being arranged such that destructive interference of EUV radiation occurs on the two metal cap layers and thereby the resulting EUV reflection is zero.
12. A membrane according to claim 4 , wherein the core layer comprises (poly-)Si and the cap layer for improved IR emissivity comprises at least one selected from: Ti, Nd, Pr, Nb, La, Zr, B, Y, Be, ZrO 2 , MoSi 2 , ZrSi 2 or NbSi 2 .
13. A membrane according to claim 4 , wherein the core layer comprises B, B 4 C or Be and has a thickness of 25 nm or less.
14. A membrane according to claim 4 , wherein the core layer is a multilayer core comprising up to 20 pairs of B or B 4 C and graphene, wherein the layer thickness ratio is 10 nm B or B 4 C/3 nm graphene.
15. A membrane according to claim 4 , wherein the core layer is a multilayer core comprising up to 20 pairs of SiN x and graphene, wherein the layer thickness ratio is 10 nm SiN x /2 nm graphene.
16. A membrane according to claim 13 , wherein the core layer is a B or B 4 C layer of thickness selected from 5-15 nm and wherein the cap layer for improved IR emissivity is a (poly-)crystalline Y, Ru or Mo layer with a thickness of 1-3 nm.
17. A membrane according to claim 4 , wherein the core layer has a thickness of 16 nm or less and comprises a carbon-based material.
18. A membrane according to claim 4 , wherein the core layer comprises silicon nitride and has a thickness of 15 nm or less.
19. A membrane according to claim 4 , wherein the core layer comprises (poly-)crystalline yttrium and has a thickness of 50 nm or less.
20. A membrane according to claim 4 , wherein the core layer comprises polycrystalline Zr and has a thickness of 25 nm or less.
21. A membrane for a lithographic apparatus having IR radiation emissivity of at least 0.1 and being substantially transmissive to EUV radiation, the membrane comprising a core layer from a material comprising Ru, wherein the core layer has a thickness from 20 to 30 nm.
22. A membrane assembly for a lithographic apparatus, the membrane assembly having IR radiation emissivity of at least 0.1 and being substantially transmissive to EUV radiation, the membrane assembly comprising at least two metal cap layers for improved IR emissivity, the metal cap layers each comprising a metal which absorbs IR radiation and each having a layer thickness of 20 nm or less, wherein adjacent ones of the metal cap layers are separated by a distance selected from the range of about 1-10 microns or separated by a distance of about nλ/2 such that destructive interference occurs between the metal layers, with n being an integer equal to 1 or more and λ being a wavelength of the EUV radiation used for lithographic exposure.
23. A mask assembly comprising a lithographic mask and a frame coupled to the mask, the frame supporting a membrane as claimed in claim 1 .
24. A lithographic apparatus comprising one or more membranes as claimed in claim 1 .
25. A membrane for a lithographic apparatus, the membrane comprising:
a core layer of a thickness 60 nm or less, the core layer comprising a material, substantially transparent for radiation at an EUV wavelength, selected from: poly-Si, ZrB 2 , MoB 2 , RuB 2 , LaB 2 , LaC, TiB 2 , TiC, poly-crystalline Y, poly-crystalline Zr, Be, B or B 4 C, and
a cap layer for improved IR emissivity comprising a material which absorbs IR radiation and having a layer thickness of 20 nm or less,
wherein combination of at least the core layer and cap layer of the membrane has IR radiation emissivity of at least 0.1.
26. A membrane according to claim 25 , wherein the core layer comprises at least poly-Si.
27. A membrane according to claim 25 , wherein the cap layer comprises at least one selected from: Ru, Mo, Zr, or B.
28. A pellicle assembly for a lithographic mask, the pellicle assembly comprising a frame arranged to be coupled to the lithographic mask and the frame supporting the membrane as claimed in claim 25 .