IP Library Granted Patent US 9,754,762
Granted Patent B2
US 9,754,762 · App. 15/322,659 · Granted Sep 5, 2017

Electron microscope and sample observation method

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Quick Facts
Patent No.
US 9,754,762
App. No.
15/322,659
Granted
Sep 5, 2017
Kind
B2
Abstract

Provided are a device and a method allowing a crystal orientation to be adjusted with adequate throughput and high precision to observe a sample, regardless of the type of the sample or the crystal orientation. In the present invention, the method comprises: setting a fitting circular pattern ( 26 ) displayed overlaid so that a main spot ( 23 ) is positioned on the circumference thereof, on the basis of the diffraction spot brightness distribution in an electron diffraction pattern ( 22 b ) displayed on a display unit ( 13 ); setting a vector ( 28 ) displayed with the starting point at the center position ( 27 ) of the displayed circular pattern ( 26 ), and the end point at the location of the main spot ( 23 ) positioned on the circumference of the circular pattern ( 26 ); and adjusting the crystal orientation on the basis of the orientation and the magnitude of the displayed vector ( 28 ).

Claims (37)

1. An electron microscope comprising:

an electron source with electron beams which irradiate a sample;

a sample stage which holds the sample;

a driving unit which drives the sample stage;

a detecting unit which acquires a signal which is obtained from the sample by irradiation of the electron beams and detects a sample image;

a display unit which displays an electron beam diffraction image of the sample; and

a control unit,

wherein the control unit has

a pattern setting unit that sets a circular pattern for fitting which is displayed overlaid so that a main spot is positioned on a circumference thereof, based on a diffraction spot brightness distribution in an electron beam diffraction pattern displayed on a display unit, and

a vector setting unit which sets a vector displayed with a starting point at a center position of the displayed circular pattern, and an end point at a location of the main spot positioned on the circumference of the circular pattern, and

wherein the control unit controls the driving unit so as to tilt the sample based on an orientation and magnitude of the displayed vector.

2. The electron microscope according to claim 1 ,

wherein the pattern setting unit sets the circular pattern for fitting so as to be displayed in a region in which there is a brightness distribution.

3. The electron microscope according to claim 1 ,

wherein the pattern setting unit changes a size of the circular pattern.

4. The electron microscope according to claim 1 ,

wherein the control unit determines a tilting direction of the sample based on the orientation of the vector which is set by the vector setting unit and determines a tilting angle of the sample based on the magnitude of the vector.

5. The electron microscope according to claim 1 ,

wherein the control unit switches an observation mode so as to display the sample image which is detected by the detecting unit on the display unit when tilting the sample.

6. The electron microscope according to claim 1 , further comprising:

a tilting device which tilts the region which is irradiated with the electron beams,

wherein the control unit controls the tilting device so as to correct field of view shifting which is generated when tilting the sample.

7. The electron microscope according to claim 1 ,

wherein the pattern setting unit sets, a circular arced pattern for fitting which forms a part of the circumference of the circular pattern which is displayed overlaid so that a main spot is positioned on the circumference thereof, on the basis of the diffraction spot brightness distribution in an electron beam diffraction pattern displayed on a display unit, and

the vector setting unit determines a radius of the circular pattern based on coordinates of two optional points on the circumference of the displayed circular arced pattern, sets a center position of the circular pattern based on the determined radius, and sets a vector displayed with the starting point at the set center position of the displayed circular pattern, and the end point at the location of the main spot positioned on the circumference of the circular pattern.

8. The electron microscope according to claim 1 ,

wherein the pattern setting unit sets the circular pattern for fitting in a semi-transparent band form.

9. A method for observing a sample using an electron microscope, the method comprising:

irradiating a sample with electron beams using an electron source;

holding the sample using a sample stage;

driving the sample stage using a driving unit;

detecting a sample image by acquiring a signal which is obtained from the sample by irradiation of the electron beams, using a detecting unit;

displaying an electron beam diffraction image of the sample using a display unit; and

the method comprising a control unit configured to perform the following steps:

a step of setting a circular pattern for fitting which is displayed overlaid so that a main spot is positioned on a circumference thereof, based on a diffraction spot brightness distribution in an electron beam diffraction pattern displayed on a display unit;

a step of setting a vector displayed with a starting point at a center position of the displayed circular pattern, and an end point at a location of the main spot positioned on the circumference of the circular pattern; and

a step of tilting the sample based on an orientation and magnitude of the displayed vector.

Assignments (2)
CHANGE OF NAME AND ADDRESS Recorded Mar 30, 2020
From: HITACHI HIGH-TECHNOLOGIES CORPORATION
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 052259/0227 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 28, 2016
From: YAGUCHI, TOSHIE; KOBAYASHI, HIROYUKI; YOTSUJI, TAKAFUMI
To: HITACHI HIGH-TECHNOLOGIES CORPORATION
Reel/Frame 040788/0162 →