Thin substrate, method for manufacturing same, and method for transporting substrate
[Problem] To provide a technology that allows a film or glass to be bonded to a transport substrate and to be easily separated during the manufacture of a substrate. [Solution] Provided is a method for manufacturing a substrate having an electronic device formed on a surface, the method comprising a formation step for forming an inorganic material layer on at least one of a bonding surface by which the substrate having an electronic device formed on a surface is to be bonded to a transport substrate, and a bonding surface on the transport substrate for transporting the substrate; a bonding step for pressing the substrate and the transport substrate against each other and bonding the substrate and the transport substrate by the inorganic material layer; and a separation step for separating the substrate and the transport substrate.
1. A method for manufacturing a substrate having an electronic device formed on a surface, the method comprising:
(i) forming an inorganic material layer on at least one of a bonding surface by which the substrate having an electronic device formed on a surface is to be bonded to a transport substrate, and a bonding surface on the transport substrate for transporting the substrate;
(ii) pressing the substrate and the transport substrate against each other and bonding the substrate and the transport substrate by the inorganic material layer; and
(iii) separating the substrate having an electronic device formed on a surface and the transport substrate,
wherein the bonding surface of at least one of the substrate and the transport substrate is exposed to a gas atmosphere comprising an inert gas, before the substrate bonding (ii).
2. The manufacturing method according to claim 1 , further comprising, before or after the bonding (ii) and before the separation (iii), forming an electronic device on the substrate, and sealing the electronic device with another substrate.
3. The manufacturing method according to claim 1 , further comprising, before the bonding (ii), activating the bonding surface of at least one of the substrate and the transport substrate, by irradiation with particles having a prescribed kinetic energy.
4. The manufacturing method according to claim 1 , further comprising, before the bonding (ii), activating the surface of the inorganic material layer by irradiation with particles having a prescribed kinetic energy.
5. The manufacturing method according to claim 1 , wherein a portion of the substrate is selectively surface-activated before the bonding (ii).
6. The manufacturing method according to claim 1 , wherein a portion of the inorganic material layer is selectively surface-activated before the bonding (ii).
7. The manufacturing method according to claim 1 , wherein a plurality of inorganic material layers of different types are formed.
8. The manufacturing method according to claim 1 , wherein the substrate is glass.
9. The manufacturing method according to claim 1 , wherein the substrate is a film comprising an organic material.
10. The manufacturing method according to claim 1 , wherein the substrate is a wafer comprising silicon or a compound semiconductor.
11. The manufacturing method according to claim 1 , wherein the substrate is composed of a plurality of layers, comprising a layer comprising glass, and a layer comprising an organic material.
12. The manufacturing method according to claim 11 , wherein the substrate is composed of a layer comprising glass and a layer comprising an organic material, and a side having the layer comprising an organic material is bonded to the transport substrate.
13. The manufacturing method according to claim 1 , wherein the substrate is composed of a plurality of layers, comprising a layer comprising silicon or a compound semiconductor, and a layer comprising an organic material.
14. The manufacturing method according to claim 13 , wherein the substrate is composed of a layer comprising silicon or a compound semiconductor and a layer comprising an organic material, and a side having the layer comprising an organic material is bonded to the transport substrate.
15. The manufacturing method according to claim 1 , wherein a film comprising a resin material layer and a substrate layer is applied on the bonding surface of the substrate, before the forming (i) of the inorganic material layer.
16. The manufacturing method according to claim 1 , wherein the thickness of the substrate is at least 0.5 μm and at most 0.5 mm.
17. The manufacturing method according to claim 1 , wherein the thickness of the transport substrate is at least 0.1 mm and at most 1.1 mm.
18. The manufacturing method according to claim 1 , wherein the inorganic material layer is formed so as to surround the electronic device formed on the substrate, in plan view from the substrate surface side.
19. The manufacturing method according to claim 1 , wherein the inorganic material layer is formed in a discrete manner.
20. The manufacturing method according to claim 1 , wherein the inert gas is nitrogen, argon or a mixed gas thereof.
21. The manufacturing method according to claim 1 , wherein the substrate bonding (ii) is performed in a vacuum atmosphere or in a gas atmosphere comprising an inert gas.
22. The manufacturing method according to claim 21 , wherein the inert gas is nitrogen, argon or a mixed gas thereof.
23. The manufacturing method according to claim 1 , wherein the substrate bonding (ii) is performed in a reduced-pressure atmosphere or a vacuum for which a background pressure is at least 1×10 −8 Pa and less than atmospheric pressure.
24. A thin substrate manufactured by the manufacturing method according claim 1 .
25. An electronic device formation substrate having an electronic device formed on the surface of a thin substrate according to claim 24 .
26. A method for manufacturing a substrate having an electronic device formed on a surface, the method comprising:
(i) forming an inorganic material layer on at least one of a bonding surface by which the substrate having an electronic device formed on a surface is to be bonded to a film, and a bonding surface on the film for transporting the substrate; and
(ii) pressing the substrate and the film against each other and bonding the substrate and the film by the inorganic material layer;
wherein the bonding surface of at least one of the substrate and the film is exposed to a gas atmosphere comprising an inert gas, before the substrate bonding (ii), and
wherein a device substrate comprising the substrate and the film is manufactured.
27. The manufacturing method according to claim 26 , wherein the bonding (ii) is performed by a roll-to-roll method.
28. The manufacturing method according to claim 26 , further comprising, before or after the bonding (ii), forming an electronic device on the substrate, and sealing the electronic device with another substrate.
29. The manufacturing method according to claim 26 , wherein the inert gas is nitrogen, argon or a mixed gas thereof.
30. The manufacturing method according to claim 26 , wherein the substrate bonding (ii) is performed in a vacuum atmosphere or in a gas atmosphere comprising an inert gas.
31. The manufacturing method according to claim 30 , wherein the inert gas is nitrogen, argon or a mixed gas thereof.
32. The manufacturing method according to claim 26 , wherein the substrate bonding (ii) is performed in a reduced-pressure atmosphere or a vacuum for which a background pressure is at least 1×10-8 Pa and less than atmospheric pressure.
33. A method for transporting a substrate, comprising:
(i) forming an inorganic material layer on at least one of a bonding surface by which the substrate having an electronic device formed on a surface is to be bonded to a transport substrate, and a bonding surface on the transport substrate for transporting the substrate;
(ii) pressing the substrate and the transport substrate against each other and bonding the substrate and the transport substrate by the inorganic material layer; and
(iii) separating the substrate having an electronic device formed on a surface and the transport substrate,
wherein the bonding surface of at least one of the substrate and the transport substrate is exposed to a gas atmosphere comprising an inert gas, before the substrate bonding (ii).
34. A method for transporting a substrate, comprising:
(i) forming an inorganic material layer on at least one of a bonding surface by which the substrate having an electronic device formed on a surface is to be bonded to a film, and a bonding surface on the film for transporting the substrate; and
(ii) pressing the substrate and the film against each other and bonding the substrate and the film by the inorganic material layer;
wherein the bonding surface of at least one of the substrate and the film is exposed to a gas atmosphere comprising an inert gas, before the substrate bonding (ii),
wherein a device substrate comprising the substrate and the film is manufactured.
35. A thin substrate manufactured by the manufacturing method according to claim 26 .
36. An electronic device formation substrate having an electronic device formed on the surface of a thin substrate according to claim 35 .