Method for removing a metal deposit placed on a surface in a chamber
View Patent ↗A method for removing a metallic deposit disposed on a surface in a chamber, including the following steps: a) a step of oxidizing the metallic deposit; b) a step of injecting chemical species adapted to volatilized the oxidized metallic deposit, the step b) being implemented during at least a part of step a); and in step b), the chemical species are injected according to a sequence of pulses.
1. A method for removing a copper deposit disposed on a surface in an enclosure, said method comprising the following steps:
a. a step of flowing oxidizing species capable of oxidizing the copper deposit; and
b. a step of flowing chemical species capable of volatilizing the oxidized copper deposit, said step b) being implemented during at least a part of said step a); and in step b), the chemical species are flowing according to a sequence of pulses;
wherein during a first pulse of the sequence of pulses the oxidation of said step a) becomes a minority reaction and the oxidized copper deposit is volatized by the chemical species flowing in said step b); and
wherein once said first pulse of the sequence of pulses has ended, the oxidation of the copper deposit is a dominant reaction until a next pulse of the sequence of pulses of said step b).
2. The method according to claim 1 , wherein in step b), during a latest pulse of two successive pulses, the chemical species are flowing in a sub-stoichiometric quantity with respect to a quantity of the oxidized copper deposit between said two successive pulses.
3. The method according to claim 1 , wherein the duration of the pulses of the sequence of pulses is set so that the layer of the oxidized copper deposit is not entirely oxidized.
4. The method according to claim 3 , wherein two successive pulses are separated by a time interval during which no chemical species adapted to volatize the oxidized copper deposit is injected.
5. The method according to claim 1 , wherein the chemical species flowing in step b) comprise hexafluoroacetylacetone.
6. The method according to claim 1 , wherein the first pulse of step b) is implemented after the start of step a).
7. The method according to claim 1 , wherein the method is implemented for cleaning off copper residues disposed on the inner walls of a deposition chamber.
8. The method according to claim 1 , wherein the method is implemented for etching a copper deposit deposited in excess on a surface.
9. The method according to claim 8 , wherein before steps a) and b), a mask is affixed in a localized manner onto the copper deposit.
10. The method according to claim 9 , further comprising the following steps:
the mask is affixed over each region of the copper deposit to be retained;
steps a) and b) are implemented in order to remove the excess copper deposit in each region not covered by the mask.
11. The method according to claim 9 , further comprising the following steps:
the mask is affixed over each region of the copper deposit to be etched;
flowing chemical species adapted to passivate the copper deposit in each region not covered by the mask;
the mask is removed; and
steps a) and b) are implemented in order to remove the excess copper deposit in each region covered beforehand by the mask.
12. The method according to claim 8 , wherein steps a) and b) are repeated as many times as necessary in order to remove the excess copper deposit.
13. The method according to claim 1 , wherein the oxidizing species consisting of a gaseous source.
14. The method according to claim 1 , wherein the oxidizing species are continuously flowing throughout the removal of the copper deposit.
15. The method according to claim 14 , wherein the oxidizing species are flowing at a constant flow rate throughout the removal of the copper deposit.