Structures and methods for low temperature bonding using nanoparticles
A method of making an assembly can include juxtaposing a top surface of a first electrically conductive element at a first surface of a first substrate with a top surface of a second electrically conductive element at a major surface of a second substrate. One of: the top surface of the first conductive element can be recessed below the first surface, or the top surface of the second conductive element can be recessed below the major surface. Electrically conductive nanoparticles can be disposed between the top surfaces of the first and second conductive elements. The conductive nanoparticles can have long dimensions smaller than 100 nanometers. The method can also include elevating a temperature at least at interfaces of the juxtaposed first and second conductive elements to a joining temperature at which the conductive nanoparticles can cause metallurgical joints to form between the juxtaposed first and second conductive elements.
1. A method of making an assembly, comprising:
juxtaposing a top surface of a first electrically conductive element at a first surface of a first substrate with a top surface of a second electrically conductive element at a major surface of a second substrate, the first surface of the first substrate and the major surface of the second substrate each comprising a dielectric material, wherein electrically conductive nanoparticles are disposed between the top surfaces of the first and second conductive elements, the conductive nanoparticles having long dimensions smaller than 100 nanometers;
elevating a temperature at least at interfaces of the juxtaposed first and second conductive elements to a joining temperature at which the conductive nanoparticles cause metallurgical joints to form between the juxtaposed first and second conductive elements; and
directly bonding the dielectric material of the first surface with the dielectric material of the major surface; and
forming the electrically conductive nanoparticles including exposing at least one receiving surface being at least one of the top surfaces of the first and second conductive elements to an electrolytic bath at a current density greater than the mass transport limiting current density of the electrolytic bath.
2. The method of claim 1 , wherein at least one of the first and second conductive elements comprises an electrically conductive pad, an electrically conductive trace, or an electrically conductive substantially rigid post.
3. The method of claim 1 , further comprising:
etching the major surface of the second substrate to form a recess extending below the major surface and to expose the top surface of the second conductive element within the recess; and
after the etching, then depositing the electrically conductive nanoparticles onto at least the top surface of the second conductive element,
wherein the first conductive element is a rigid post, the top surface of the rigid post being remote from the first surface of the first substrate and projecting a height above the first surface, the rigid post having edge surfaces extending substantially in a vertical direction away from the top surface thereof, and wherein the top surface of the second conductive element is disposed in the recess.
4. The method of claim 1 , wherein the first conductive element is a rigid post, the top surface of the rigid post being remote from the first surface of the first substrate and projecting a height above the first surface, the rigid post having edge surfaces extending in a vertical direction away from the top surface thereof, and wherein after the juxtaposing, the top surface of the rigid post is disposed in a recess extending below the major surface of the second substrate.
5. The method of claim 1 , wherein, before the juxtaposing of the top surfaces of the first and second electrically conductive elements, the electrically conductive nanoparticles are disposed on the top surface of both of the first and second electrically conductive elements.
6. The method of claim 5 , wherein, before the juxtaposing of the top surfaces of the first and second electrically conductive elements, the conductive nanoparticles include first and second layers of conductive nanoparticles overlying each top surface, the first layer of conductive nanoparticles disposed on the respective top surface and the second layer of conductive nanoparticles disposed on the first layer of conductive nanoparticles, the second layer of conductive nanoparticles comprising at least one material different than at least one material comprising the first layer of conductive nanoparticles.
7. The method of claim 6 , wherein, before the juxtaposing of the top surfaces of the first and second electrically conductive elements, the conductive nanoparticles on each top surface include a third layer of conductive nanoparticles formed on the respective second layer of conductive nanoparticles, the third layer of conductive nanoparticles comprising at least one material different than the at least one material comprising the second layer of conductive nanoparticles, the second layer of conductive nanoparticles including a barrier metal configured to prevent metal of the third layer of conductive nanoparticles from penetrating into the first layer of conductive nanoparticles.
8. The method of claim 1 , wherein, before the juxtaposing of the top surfaces of the first and second electrically conductive elements, the electrically conductive nanoparticles are disposed on the top surface of one of the first or second electrically conductive elements.
9. The method of claim 1 , further comprising, before the temperature is elevated, depositing solder onto the conductive nanoparticles on at least one of the top surfaces of the first and second electrically conductive elements, wherein during the elevating of the temperature, the solder fills gaps between at least some of the conductive nanoparticles via capillary action.
10. The method of claim 1 , comprising:
wherein the dielectric material at the first surface and the major surface each include a B-stage material layer that is not fully cured, and during the elevating of the temperature, the B-stage material layers are fully cured.
11. The method of claim 6 , wherein, before the juxtaposing of the top surfaces of the first and second electrically conductive elements, the conductive nanoparticles on each top surface include a third layer of conductive nanoparticles formed on the respective second layer of conductive nanoparticles, the third layer of conductive nanoparticles comprising at least one material different than the at least one material comprising the second layer of conductive nanoparticles, the second layer of conductive nanoparticles including a barrier metal configured to prevent metal of the third layer of conductive nanoparticles from penetrating into the first layer of conductive nanoparticles.
12. The method of claim 1 , wherein one of: the top surface of the first conductive element is recessed below the first surface of the first substrate, or the top surface of the second conductive element is recessed below the major surface of the second substrate.
13. The method of claim 7 , wherein one of: the top surface of the first conductive element is recessed below the first surface of the first substrate, or the top surface of the second conductive element is recessed below the major surface of the second substrate.
14. The method of claim 7 , further comprising forming the electrically conductive nanoparticles including exposing at least one receiving surface being at least one of the top surfaces of the first and second conductive elements to an electroless plating bath or an electrolytic bath at a current density greater than the mass transport limiting current density of the electrolytic bath.
15. The method of claim 7 , wherein at least one of the first and second conductive elements comprises an electrically conductive pad, an electrically conductive trace, or an electrically conductive substantially rigid post.
16. The method of claim 7 , wherein the first conductive element is a substantially rigid post, the top surface of the substantially rigid post being remote from the first surface of the first substrate and projecting a height above the first surface, the substantially rigid post having edge surfaces extending substantially in a vertical direction away from the top surface thereof, and wherein the top surface of the second conductive element is disposed in a recess extending below the major surface of the second substrate.
17. The method of claim 16 , further comprising etching the major surface of the second substrate to form the recess and to expose the top surface of the second conductive element within the recess.
18. The method of claim 7 , wherein the first conductive element is a substantially rigid post, the top surface of the substantially rigid post being remote from the first surface of the first substrate and projecting a height above the first surface, the substantially rigid post having edge surfaces extending substantially in a vertical direction away from the top surface thereof, and wherein after the juxtaposing, the top surface of the substantially rigid post is disposed in a recess extending below the major surface of the second substrate.