Solid-state imaging device and method for manufacturing solid-state imaging device, and electronic device
A solid-state imaging device includes a first-conductivity-type semiconductor well region, a plurality of pixels each of which is formed on the semiconductor well region and is composed of a photoelectric conversion portion and a pixel transistor, an element isolation region provided between the pixels and in the pixels, and an element isolation region being free from an insulation film and being provided between desired pixel transistors.
1. An imaging device, comprising:
a first area including a first set of photodiodes that share a first floating diffusion region and a second set of photodiodes that share a second floating diffusion region, wherein the first set of photodiodes and the second set of photodiodes are arranged along a first direction;
a second area including a first amplification transistor and a first reset transistor, each of which is coupled to the first floating diffusion region, a second amplification transistor and a second reset transistor, each of which is coupled to the second floating diffusion region, an element isolation region, and a well contact region, wherein the first area and the second area are arranged along a second direction perpendicular to the first direction; and
a third area including a third set of photodiodes that share a third floating diffusion region and a fourth set of photodiodes that share a fourth floating diffusion region, wherein the third set of photodiodes and the fourth set of photodiodes are arranged along the first direction,
wherein the first floating diffusion region is configured to receive charges from the first set of photodiodes via a first set of transfer transistors, and is disposed between the first set of transfer transistors,
wherein the second floating diffusion region is configured to receive charges from the second set of photodiodes via a second set of transfer transistors, and is disposed between the second set of transfer transistors,
wherein the third floating diffusion region is configured to receive charges from the third set of photodiodes via a third set of transfer transistors, and is disposed between the third set of transfer transistors,
wherein the fourth floating diffusion region is configured to receive charges from the fourth set of photodiodes via a fourth set of transfer transistors, and is disposed between the fourth set of transfer transistors,
wherein the third set of photodiodes is adjacent to the first set of photodiodes across the second area along the second direction,
wherein the fourth set of photodiodes is adjacent to the second set of photodiodes across the second area along the second direction,
wherein the first set of photodiodes is adjacent to the fourth set of photodiodes across the well contact region, and
wherein the second set of photodiodes is adjacent to the third set of photodiodes across the well contact region.
2. The imaging device of claim 1 , wherein the element isolation region is arranged between the first amplification transistor and the second amplification transistor and comprises an insulating material.
3. The imaging device of claim 2 , wherein the insulating material comprises a silicon oxide.
4. The imaging device of claim 3 , wherein the insulating material is disposed as a silicon oxide film.
5. The imaging device of claim 1 , wherein the element isolation region has a shallow trench isolation (STI) structure.
6. The imaging device of claim 1 , wherein the first area further includes an impurity diffusion region.
7. The imaging device of claim 1 , wherein the well contact region is configured to apply a voltage to a semiconductor well region.
8. The imaging device of claim 1 , wherein the second area further includes a first selection transistor coupled to the first amplification transistor and a second selection transistor coupled to the second amplification transistor.
9. The imaging device of claim 8 , wherein the well contact region is arranged between the first amplification transistor and the second amplification transistor along the first direction in the second area.
10. The imaging device of claim 1 , wherein each of the first area and the second area extends along the first direction.
11. An imaging device comprising:
a first set of photodiodes that share a first floating diffusion region;
a first set of transistors coupled to the first floating diffusion region, and including a first amplification transistor, a first reset transistor, and a first selection transistor;
a second set of photodiodes that share a second floating diffusion region;
a second set of transistors coupled to the second floating diffusion region, and including a second amplification transistor, a second reset transistor, and a second selection transistor;
a third set of photodiodes that share a third floating diffusion region;
a third set of transistors coupled to the third floating diffusion region, and including a third amplification transistor, a third reset transistor, and a third selection transistor;
a fourth set of photodiodes that share a fourth floating diffusion region;
a fourth set of transistors coupled to the fourth floating diffusion region, and including a fourth amplification transistor, a fourth reset transistor, and a fourth selection transistor; and
a well contact region configured to apply a voltage to a semiconductor well region,
wherein the first floating diffusion region is configured to receive charges from the first set of photodiodes via a first set of transfer transistors, and is disposed between the first set of transfer transistors,
wherein the second floating diffusion region is configured to receive charges from the second set of photodiodes via a second set of transfer transistors, and is disposed between the second set of transfer transistors,
wherein the third floating diffusion region is configured to receive charges from the third set of photodiodes via a third set of transfer transistors, and is disposed between the third set of transfer transistors,
wherein the fourth floating diffusion region is configured to receive charges from the fourth set of photodiodes via a fourth set of transfer transistors, and is disposed between the fourth set of transfer transistors,
wherein the first set of photodiodes and the second set of photodiodes are arranged along a first direction,
wherein the third set of photodiodes and the fourth set of photodiodes are arranged along the first direction,
wherein the third set of photodiodes is adjacent to the first set of photodiodes across the first set of transistors along a second direction perpendicular to the first direction,
wherein the fourth set of photodiodes is adjacent to the second set of photodiodes across the second set of transistors along the second direction,
wherein the first set of photodiodes is adjacent to the fourth set of photodiodes across the well contact region, and
wherein the second set of photodiodes is adjacent to the third set of photodiodes across the well contact region.
12. The imaging device of claim 11 , wherein an element isolation region is arranged between the first amplification transistor and the second amplification transistor and comprises an insulating material.
13. The imaging device of claim 12 , wherein the insulating material comprises a silicon oxide.
14. The imaging device of claim 13 , wherein the insulating material is disposed as a silicon oxide film.
15. The imaging device of claim 12 , wherein the element isolation region has a shallow trench isolation (STI) structure.
16. The imaging device of claim 12 , wherein the well contact region is arranged between the first amplification transistor and the second amplification transistor along the first direction.
17. An imaging device comprising:
a first four photodiodes surrounding a first floating diffusion region;
a first set of transistors coupled to the first floating diffusion region, and including a first amplification transistor, a first reset transistor, and a first selection transistor;
a second four photodiodes surrounding a second floating diffusion region;
a second set of transistors coupled to the second floating diffusion region, and including a second amplification transistor, a second reset transistor, and a second selection transistor; and
a well contact region configured to apply a voltage to a semiconductor well region,
wherein the first four photodiodes and the second four photodiodes are arranged along a first direction,
wherein the well contact region is arranged between the first set of transistors and the second set of transistors along the first direction,
wherein the first floating diffusion region is configured to receive charges from the first four photodiodes via a first set of transfer transistors, and is disposed between the first set of transfer transistors, and
wherein the second floating diffusion region is configured to receive charges from the second four photodiodes via a second set of transfer transistors, and is disposed between the second set of transfer transistors.
18. The imaging device of claim 17 , wherein an element isolation region is arranged between the first amplification transistor and the second amplification transistor and comprises an insulating material.
19. The imaging device of claim 18 , wherein the insulating material comprises a silicon oxide.
20. The imaging device of claim 19 , wherein the insulating material is disposed as a silicon oxide film.
21. The imaging device of claim 18 , wherein the element isolation region has a shallow trench isolation (STI) structure.
22. The imaging device of claim 17 , wherein the well contact region is arranged between the first amplification transistor and the second amplification transistor along the first direction.