Method for acquiring parameter for dose correction of charged particle beam, charged particle beam writing method, and charged particle beam writing apparatus

1. A method for acquiring a parameter for correcting a dose of a charged particle beam comprising:

writing, using a charged particle beam, a plurality of evaluation patterns on a substrate coated with resist;

writing, under each writing condition while varying writing condition for each of the plurality of evaluation patterns, a peripheral pattern according to a corresponding writing condition on a periphery of any different one of the plurality of evaluation patterns by using a plurality of shots of the charged particle beam, after time that can be disregarded with respect to influence of temperature increase of the resist due to writing of an evaluation pattern concerned of the plurality of evaluation patterns has passed;

measuring, under the each writing condition, a width dimension of the evaluation pattern concerned, on whose periphery the peripheral pattern has been written;

calculating, under the each writing condition, a backscatter dose reaching the evaluation pattern concerned from each shot of the plurality of shots;

calculating, under the each writing condition, a temperature increase amount of the evaluation pattern concerned, which is increased due to heat transferred from at least one shot previous to a shot concerned in the plurality of shots, at each shot time of the plurality of shots; and

calculating a correlation parameter for defining a correlation among a width dimension change amount of the evaluation pattern concerned, the temperature increase amount of the evaluation pattern concerned, and the backscatter dose reaching to the evaluation pattern concerned, by using a width dimension of the evaluation pattern concerned under the each writing condition, the temperature increase amount of the evaluation pattern concerned at the each shot time under the each writing condition, and the backscatter dose reaching the evaluation pattern concerned from the each shot under the each writing condition, and outputting the correlation parameter.

2. The method according to claim 1 , wherein the correlation parameter is acquired for each type of the resist.

3. The method according to claim 1 further comprising:

generating, using first chip data which defines pattern data of the plurality of evaluation patterns, first shot data by performing data conversion processing of several steps for the first chip data; and

generating, using second chip data which defines pattern data of the peripheral pattern, second shot data by performing data conversion processing of several steps for the second chip data, wherein

the plurality of evaluation patterns are written using the first shot data generated,

the second shot data is generated after the plurality of evaluation patterns have been written, and

the peripheral pattern is written using the second shot data generated.

4. The method according to claim 1 , wherein the each writing condition is made variable by varying a settling time of an amplifier for applying a voltage to a deflector which deflects the charged particle beam.

5. The method according to claim 1 , wherein the each writing condition is made variable by varying a distance between the evaluation pattern concerned and the peripheral pattern.