Photodetector comprising a pinned photodiode that is formed by an optically sensitive layer and a silicon diode
In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an optically sensitive layer over the semiconductor substrate. A pixel circuit is formed for each of the plurality of pixel regions. Each pixel circuit includes a pinned photodiode, a charge store, and a read out circuit for each of the plurality pixel regions. The optically sensitive layer is in electrical communication with a portion of a silicon diode to form the pinned photodiode. A potential difference between two electrodes in communication with the optically sensitive layer associated with a pixel region exhibits a time-dependent bias; a biasing during a first film reset period being different from a biasing during a second integration period.
1. A photodetector, comprising:
a semiconductor substrate, wherein the semiconductor substrate resides at a first electrical potential;
a plurality of pixel regions, each pixel region comprising an optically-sensitive layer formed over the substrate; and
a pixel circuit formed on the substrate for each pixel region, each pixel circuit comprising:
a diode, wherein the optically-sensitive layer is in direct electrical communication with a portion of the diode to form a pinned photodiode;
a charge store; and
a readout circuit for each pixel region comprising at least three transistors, wherein the optically-sensitive layer forms a portion of the readout circuit,
wherein the optically-sensitive layer is formed over the diode, and the readout circuit comprises a transparent electrode formed over the optically-sensitive layer.
2. The photodetector according to claim 1 , wherein the at least three transistors are arranged in a 3T configuration.
3. The photodetector according to claim 1 , wherein the at least three transistors comprise at least four transistors arranged in a 4T configuration.
4. The photodetector according to claim 1 , wherein the optically-sensitive layer comprises quantum dots.
5. The photodetector according to claim 1 , wherein the pinned photodiode, following annealing at 150° C. or greater for 1 minute or greater, achieves light detection with a signal-to-noise ratio greater than 1 upon illumination at no more than 0.05 lux of visible-wavelength light.
6. A photodetector, comprising:
a semiconductor substrate, wherein the semiconductor substrate resides at a first electrical potential;
a plurality of pixel regions, each pixel region comprising an optically-sensitive layer formed over the substrate; and
a pixel circuit formed on the substrate for each pixel region, each pixel circuit comprising:
a diode, wherein the optically-sensitive layer is in direct electrical communication with a portion of the diode to form a pinned photodiode;
a charge store; and
a readout circuit for each pixel region comprising at least three transistors, wherein the optically-sensitive layer forms a portion of the readout circuit,
wherein the semiconductor substrate resides at a first electrical potential, and wherein the pixel circuit comprises a pixel electrode in electrical communication with the optically-sensitive layer and biased to a second electrical potential, and a common electrode in electrical communication with the optically-sensitive layer and biased to a third electrical potential.
7. The photodetector according to claim 6 , wherein the second electrical potential and the third electrical potential are variable in time relative to the first electrical potential.
8. The photodetector according to claim 7 , wherein the common electrode is set to a low voltage during an integration period of the photodetector, and to a high voltage during a readout period of the photodetector following the integration period.
9. The photodetector according to claim 7 , wherein a potential difference between the second and third electrical potentials is set to a different bias during a reset period of the photodetector relative to an integration period of the photodetector.
10. The photodetector according to claim 6 , wherein the pixel electrode forms a Schottky contact with the optically-sensitive layer, comprising a barrier having an energetic height of at least 0.4 eV.
11. A photodetector, comprising:
a semiconductor substrate, wherein the semiconductor substrate resides at a first electrical potential;
a plurality of pixel regions, each pixel region comprising an optically-sensitive layer formed over the substrate; and
a pixel circuit formed on the substrate for each pixel region, each pixel circuit comprising:
a diode, wherein the optically-sensitive layer is in direct electrical communication with a portion of the diode to form a pinned photodiode;
a charge store; and
a readout circuit for each pixel region comprising at least three transistors, wherein the optically-sensitive layer forms a portion of the readout circuit,
wherein the pixel circuit comprises a conductive material positioned between the charge store and the optically-sensitive layer, wherein the conductive material shields the charge store from light that is incident on the optically-sensitive layer.
12. An image sensor comprising an array of photodetectors according to claim 1 .