Carbon materials for carbon implantation

1. A method of implanting carbon in a substrate from a carbon-containing dopant material, comprising:

flowing a carbon-containing dopant material comprising a carbon-containing gas; into an ion implantation chamber;

ionizing the carbon-containing dopant material to form ions comprising positive carbon ions;

implanting the carbon ions in the substrate; and

flowing a fluorine-containing gas into the ion implantation chamber, while the carbon ions are being implanted, thereby increasing an amount of the carbon ions implanted in the substrate and reducing an amount of carbon or non-carbon elements deposited on the ion implantation chamber.

2. The method of claim 1 , wherein an additional gas or gases, selected from the group consisting of oxygen, an oxygen-containing gas that is different than CO 2 and CO, air, hydrogen, nitrogen, argon, xenon, and helium, flows with the carbon-containing and fluorine-containing gases.

3. The method of claim 2 , wherein the additional gas or gases comprises hydrogen or helium.

4. The method of claim 2 , wherein the additional gas or gases comprises inert gas selected from the group consisting of nitrogen, argon, xenon, helium, and combinations thereof.

5. The method of claim 2 , wherein the additional gas or gases comprises an oxygen-containing gas.

6. The method of claim 1 , wherein the fluorine-containing gas comprises COF 2 .

7. The method of claim 1 , wherein the carbon-containing gas comprises CO.

8. The method of claim 1 , wherein the carbon-containing gas comprises CO 2 .

9. The method of claim 1 , wherein the fluorine-containing gas comprises fluorine and carbon, oxygen, or both carbon and oxygen.

10. The method of claim 1 , comprising implantation of multiple implantation species.

11. The method of claim 1 , wherein the ionizing is conducted in an arc chamber of the ion implantation chamber, to which the carbon-containing and fluorine-containing gases are flowed.

12. The method of claim 1 , comprising separating C + ions via mass analysis.

13. The method of claim 1 , wherein the carbon-containing and fluorine-containing gases, and an optional additional gas, comprise a gas combination selected from the group consisting of:

(i) CO+F 2 ;

(ii) CO+F 2 +O 2 ;

(iii) CO+F 2 +H 2 ;

(iv) CO+F 2 +H 2 +O 2 ;

(v) CO+COF 2 ;

(vi) CO+COF 2 +H 2 ;

(vii) CO+CF 4 ;

(viii) CO+CH 3 F;

(ix) CO+H 2 +CF 4 ;

(x) CO+H 2 +CH 3 F;

(xi) CF 4 +CH 4 ;

(xii) CF 4 +CH 4 +O 2 ;

(xiii) CO 2 +F 2 ;

(xiv) CO 2 +F 2 +O 2 ;

(xv) CO 2 +F 2 +H 2 ;

(xvi) CO 2 +F 2 +H 2 +O 2 ;

(xvii) CO 2 +COF 2 ;

(xviii) CO 2 +COF 2 +H 2 ;

(xix) CO 2 +CF 4 ;

(xx) CO 2 +CH 3 F;

(xxi) CO 2 +H 2 +CF 4 ; and

(xxii) CO 2 +H 2 +CH 3 F.

14. The method of claim 1 wherein the carbon-containing gas and fluorine-containing gas comprises CO, CO 2 , or both CO and CO 2 , and COF 2 .

15. The method of claim 14 wherein ionizing generates carbon ions, oxygen ions, and fluorine ions from the CO, CO 2 , or both CO and CO 2 , and COF 2 .

16. The method of claim 15 wherein CO, CO 2 , or both CO and CO 2 , and COF 2 , are present in a molar ratio which maximizes that amount of carbon implanted and minimizes the amounts of carbon or non-carbon elements deposited on the chamber.

17. The method of claim 1 which minimizes carbon, non-carbon elements, or both, deposited on the ion implantation chamber.

18. The method of claim 1 wherein ionizing generates fluorine ions and fluorine ions minimize oxidation of a cathode or filament in the ion implantation chamber.

19. The method of claim 1 wherein, the fluorine-containing gas is introduced into the ion implantation chamber as a co-flow with the carbon-containing gas.

20. The method of claim 1 wherein, the fluorine-containing gas is simultaneously flowed with the carbon-containing gas.