Variable gate width FinFET
An improved FinFET has a gate structure on only a portion of the available surface on a fin, thereby providing a FinFET with a finer granularity width dimension. To form the FinFET, a first etch-resistant sacrificial layer and a second etch-resistant spacer layer are formed on the fin. The spacer layer is etched anisotropically to remove the spacer layer from the top and upper sidewalls of the fin while leaving the spacer layer on the lower sidewalls of the FinFET. A gate dielectric and conducting layer are then deposited and shaped to form a structure that is effective as a gate only on the top and upper sidewalls of the fin.
1. A method for forming a FinFET structure comprising:
forming first and second thin segments of a semiconductor material that each have first and second opposing major surfaces extending from top to bottom of each of the first and second thin segments;
forming first and second spacer layers that extend to the bottom of the first thin segment on a lower portion of the first and second opposing major surfaces, respectively, of the first thin segment;
forming a dielectric layer on the first and second spacer layers, on upper portions of the first and second opposing major surfaces of the first thin segment, and on the second thin segment, wherein the dielectric layer extends from top to bottom on the first and second opposing major surfaces of the second thin segment, and wherein the dielectric layer directly contacts vertical portions of the first and second opposing major surfaces of the second thin segment; and
forming a conducting layer on the dielectric layer.
2. The method of claim 1 , wherein the semiconductor material is silicon.
3. The method of claim 1 , wherein the first thin segment has a top surface extending between upper edges of the first and second opposing major surfaces.
4. The method of claim 1 , wherein the first and second spacer layers are silicon nitride.
5. The method of claim 1 , wherein forming first and second thin segments of a semiconductor material further comprises forming a plurality of first thin segments extending in a same direction with a channel between adjacent first thin segments.
6. The method of claim 1 , wherein forming first and second spacer layers that extend to the bottom of the first thin segment on a lower portion of the first and second opposing major surfaces, respectively, of the first thin segment comprises:
forming on the first thin segment the first spacer layer of an etch resistant material; and
forming the second spacer layer of a different etch resistant material on the first spacer layer.
7. The method of claim 6 , wherein forming the second spacer layer of a different etch resistant material on the first spacer layer further comprises:
anisotropically etching the second spacer layer to remove the second spacer layer from upper portions of the first and second opposing major surfaces of the first thin segment while leaving the second spacer layer on lower portions of the first and second opposing major surfaces of the first thin segment.
8. The method of claim 1 further comprising:
removing portions of the conducting layer and the dielectric layer to produce a gate structure.
9. A method for forming a FinFET structure comprising:
forming first thin segments and a second thin segment of a semiconductor material, each first thin segment extending in a same direction with a channel between adjacent first thin segments, wherein the second thin segment extends in the same direction and is separated from an adjacent first thin segment by a channel;
forming a first spacer layer on a lower portion of first and second major surfaces of each first thin segment and extending to a bottom of each first thin segment;
forming a second spacer layer on the first spacer layer over the lower portion of the first and second major surfaces of each first thin segment;
forming a dielectric layer on the first and second spacer layers, on upper portions of the first and second major surfaces of each first thin segment, and on the second thin segment, wherein the dielectric layer extends from top to bottom on first and second major surfaces of the second thin segment, and wherein the dielectric layer directly contacts vertical portions of the first and second major surfaces of the second thin segment; and
forming a conducting gate extending across the first thin segments and the second thin segment on the dielectric layer.
10. The method of claim 9 , wherein the semiconductor material is silicon.
11. The method of claim 9 , wherein the first and second spacer layers are silicon nitride.
12. The method of claim 9 , wherein each of the first thin segments has a top surface extending between upper edges of the first and second major surfaces.
13. The method of claim 9 , wherein forming a second spacer layer on the first spacer layer over the lower portion of the first and second major surfaces of each first thin segment comprises:
forming the second spacer layer of an etch resistant material on the first spacer layer.
14. The method of claim 13 , wherein forming a second spacer layer on the first spacer layer over the lower portion of the first and second major surfaces of each first thin segment further comprises:
anisotropically etching the second spacer layer to remove the second spacer layer from upper portions of the first and second major surfaces of each first thin segment while leaving the second spacer layer on lower portions of the first and second major surfaces of each first thin segment.
15. The method of claim 9 , wherein forming a conducting gate extending across the first thin segments and the second thin segment on the dielectric layer comprises:
forming a conducting layer on the dielectric layer; and
removing portions of the conducting layer and the dielectric layer to produce the conducting gate.