Method for fin formation with a self-aligned directed self-assembly process and cut-last scheme
A method of making a semiconductor device includes disposing a first hard mask (HM), amorphous silicon, and second HM on a substrate; disposing oxide and neutral layers on the second HM; removing a portion of the oxide and neutral layers to expose a portion of the second HM; forming a guiding pattern by selectively backfilling with a polymer; forming a self-assembled block copolymer (BCP) on the guiding pattern; removing a portion of the BCP to form an etch template; transferring the pattern from said template into the substrate and forming uniform silicon fin arrays with two types of HM stacks with different materials and heights; gap-filling with oxide followed by planarization; selectively removing and replacing the taller HM stack with a third HM material; planarizing the surface and exposing both HM stacks; and selectively removing the shorter HM stack and the silicon fins underneath.
1. A method of making a semiconductor device, the method comprising:
disposing a hard mask stack on a substrate, the hard mask stack comprising a first hard mask layer in contact with the substrate, an amorphous silicon layer on the first hard mask layer, and a second hard mask layer on the amorphous silicon layer;
disposing an oxide layer and a neutral layer on the second hard mask layer;
removing a portion of the oxide layer and the neutral layer to expose a portion of the second hard mask layer;
forming a guiding pattern by selectively backfilling a polymeric material in the exposed portion of the second hard mask layer;
forming a self-assembled block copolymer layer on the guiding pattern, the guiding pattern comprising the neutral layer and the polymeric material that is backfilled;
removing a portion of the block copolymer layer to form an etch template with the polymeric material that is remaining;
etching the neutral layer, the oxide layer, the second hard mask layer, the amorphous silicon layer, and the first hard mask layer to transfer a pattern from the etch template into the neutral layer, the oxide layer, the second hard mask layer, the amorphous silicon layer, and the first hard mask layer;
etching the substrate to transfer the pattern from the hard mask stack into the substrate and form a first fin comprising a first portion of the first hard mask layer disposed on the first fin and a second fin comprising a second portion of the first hard mask layer disposed on the second fin, the second portion being thicker than the first portion;
replacing the second portion of the first hard mask layer on the second fin with a third hard mask material; and
etching to remove the first fin.
2. The method of claim 1 , wherein the second fin further comprises a portion of the amorphous silicon layer on the second portion of the first hard mask layer.
3. The method of claim 2 , wherein the portion of the amorphous silicon layer is replaced with the third hard mask material.
4. The method of claim 1 , wherein the first hard mask layer comprises silicon nitride.
5. The method of claim 4 , wherein the second hard mask layer comprises silicon nitride.
6. The method of claim 1 , wherein replacing the second portion of the first hard mask layer comprises a selective etch process.
7. The method of claim 1 , wherein the first hard mask layer is different than the third hard mask material.
8. The method of claim 1 , wherein the third hard mask material is SiBCN, SiBN, SiCN, or a combination thereof.
9. The method of claim 1 , wherein the substrate comprises silicon, germanium, silicon carbide, gallium arsenide, indium arsenide, indium phosphide, or any combination thereof.
10. The method of claim 1 , wherein etching to remove the first fin is a selective etch process that selectively removes material of the first fin.
11. A method of making a semiconductor device, the method comprising:
disposing a hard mask stack on a substrate, the hard mask stack comprising a first hard mask layer in contact with the substrate, an amorphous silicon layer on the first hard mask layer, and a second hard mask layer on the amorphous silicon layer;
disposing an oxide layer and a neutral layer on the second hard mask layer;
removing a portion of the oxide layer and the neutral layer to expose a portion of the second hard mask layer;
forming a guiding pattern by selectively backfilling a polymeric material in the exposed portion of the second hard mask layer;
forming a self-assembled block copolymer layer on the guiding pattern, the guiding pattern comprising the neutral layer and the polymeric material that is backfilled, the self-assembled block copolymer layer comprising polystyrene (PS) and poly methyl methacrylate (PMMA);
removing a portion of the block copolymer layer to form an etch template with the polymeric material that is remaining;
etching the neutral layer, the oxide layer, the second hard mask layer, the amorphous silicon layer, and the first hard mask layer to transfer a pattern from the etch template into the neutral layer, the oxide layer, the second hard mask layer, the amorphous silicon layer, and the first hard mask layer;
etching the substrate to transfer the pattern from the hard mask stack into the substrate and form a first fin comprising a first portion of the first hard mask layer disposed on the first fin and a second fin comprising a second portion of the first hard mask layer disposed on the second fin, the second portion being thicker than the first portion;
replacing the second portion of the first hard mask layer on the second fin with a third hard mask material; and
etching to remove the first fin.
12. The method of claim 11 , wherein the second fin further comprises a portion of the amorphous silicon layer on the second portion of the first hard mask layer.
13. The method of claim 12 , wherein the portion of the amorphous silicon layer is replaced with the third hard mask material.
14. The method of claim 11 , wherein the first hard mask layer comprises silicon nitride.
15. The method of claim 14 , wherein the second hard mask layer comprises silicon nitride.
16. The method of claim 11 , wherein replacing the second portion of the first hard mask layer comprises a selective etch process.
17. The method of claim 11 , wherein the first hard mask layer is different than the third hard mask material.
18. The method of claim 11 , wherein the third hard mask material is SiBCN, SiBN, SiCN, or a combination thereof.
19. The method of claim 11 , wherein the substrate comprises silicon, germanium, silicon carbide, gallium arsenide, indium arsenide, indium phosphide, or any combination thereof.
20. The method of claim 11 , wherein etching to remove the first fin is a selective etch process that selectively removes material of the first fin.