SUBSTRATE PROCESSING APPARATUS
A substrate processing apparatus includes a substrate support part provided with a first heating part, configured to heat a substrate, a gas supply part installed above the substrate support part and configured to supply a process gas to the substrate, a first exhaust port configured to exhaust an atmosphere of a process space existing above the substrate support part, a gas distribution part installed to face the substrate support part, a lid part provided with a second exhaust port configured to exhaust a buffer space existing between the gas supply part, and the gas distribution part, a rectifying part installed within the buffer space and provided with a second heating part at least partially facing the second exhaust port, the rectifying part configured to rectify the process gas, and a control part configured to control the second heating part.
1 . A substrate processing apparatus, comprising:
a substrate support part provided with a first heating part configured to heat a substrate;
a gas supply part installed above the substrate support part and configured to supply a process gas to the substrate;
a first exhaust port configured to exhaust an atmosphere of a process space existing above the substrate support part;
a gas distribution part installed to face the substrate support part;
a lid part provided with a second exhaust port configured to exhaust a buffer space existing between the gas supply part and the gas distribution part;
a rectifying part installed within the buffer space and provided with a second heating part at least partially facing the second exhaust port, the rectifying part configured to rectify the process gas; and
a control part configured to control the second heating part.
2 . The apparatus of claim 1 , wherein the second heating part is divided into a plurality of zones, and
the control part is configured to control the second heating part such that a temperature of a zone facing the second exhaust port becomes higher than a temperature of other zones.
3 . The apparatus of claim 1 , wherein the control part is configured to control the second heating part such that a temperature of a buffer-space-side surface of the gas distribution part and a temperature of a process-space-side surface of the gas distribution part become equal to each other.
4 . The apparatus of claim 2 , wherein the control part is configured to control the second heating part so that a temperature of a buffer-space-side surface of the gas distribution part and a temperature of a process-space-side surface of the gas distribution part become equal to each other.
5 . The apparatus of claim 1 , wherein a third heating part is installed in the lid part, and the control part is configured to control the third heating part such that the lid part has a temperature at which the process gas is not adsorbed onto the lid part.
6 . The apparatus of claim 4 , wherein a third heating part is installed in the lid part, and the control part is configured to control the third heating part such that the lid part has a temperature at which the process gas is not adsorbed onto the lid part.
7 . The apparatus of claim 1 , wherein a heat insulation part is installed between an outer periphery portion of the lid part and an outer periphery portion of the gas distribution part.
8 . The apparatus of claim 4 , wherein a heat insulation part is installed between an outer periphery portion of the lid part and an outer periphery portion of the gas distribution part.
9 . The apparatus of claim 5 , wherein a heat insulation part is installed between an outer periphery portion of the lid part and an outer periphery portion of the gas distribution part.
10 . The apparatus of claim 1 , wherein an outer peripheral edge of the second heating part is positioned more outward than an outer peripheral edge of the substrate.
11 . The apparatus of claim 7 , wherein an outer peripheral edge of the second heating part is positioned more outward than an outer peripheral edge of the substrate.
12 . The apparatus of claim 8 , wherein an outer peripheral edge of the second heating part is positioned more outward than an outer peripheral edge of the substrate.