Optical device structure using GaN substrates and growth structures for laser applications
Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed.
1. A system comprising:
a display, and
a laser device configured to provide light for the display, the laser device comprising:
a {30-31} crystalline surface region comprising gallium and nitrogen;
a laser stripe region formed overlying a portion of the {30-31} crystalline surface region, the laser stripe region being characterized by a cavity orientation parallel to a projection of the c-direction, the laser stripe region having a first end and a second end;
a first facet provided on the first end of the laser stripe region, the first facet comprising a first semipolar surface; and
a second facet provided on the second end of the laser stripe region, the second facet comprising a second semipolar surface, wherein the first facet is substantially parallel with the second facet; the {30-31} crystalline surface region is selected from either (30-31) or (30-3-1); and the {30-31} crystalline surface region is off-cut less than +/−8 degrees toward or away from an a-plane.
2. The system of claim 1 wherein the first facet comprises a first mirror surface, the first mirror surface comprising a reflective coating, the reflective coating being selected from silicon dioxide, hafnia, titania, tantalum pentoxide, zirconia, or aluminum oxide.
3. The system of claim 1 wherein the second facet comprises a second mirror surface, and the first and second facets are cleaved facets.
4. The system of claim 1 wherein a length of the laser stripe region ranges from about 50 microns to about 3000 microns.
5. The system of claim 1 further comprising an n-type metal region overlying a backside of the {30-31} crystalline surface region and a p-type metal region overlying an upper portion of the laser stripe region.
6. The system of claim 1 wherein the laser stripe region comprises an overlying dielectric layer exposing an upper portion of the laser stripe region.
7. The system of claim 1 further comprising an n-type gallium and nitrogen containing cladding region overlying the {30-31} crystalline surface region, and an active region overlying the n-type gallium and nitrogen containing cladding region, wherein the laser stripe region-overlies the active region.
8. The system of claim 7 wherein the active region comprises an electron blocking region.
9. The system of claim 7 wherein the active region comprises one or more quantum wells and a separate confinement heterostructure disposed between the one or more quantum wells and the n-type gallium and nitrogen containing cladding region.
10. The system of claim 1 wherein the {30-31} crystalline surface region is provided on a substrate.
11. A system comprising:
a lighting apparatus; and
a laser device configured to provide light for the lighting apparatus, the laser device comprising:
a {30-31} crystalline surface region comprising gallium and nitrogen, the {30-31} crystalline surface region being selected from either (30-31) or (30-3-1);
an active region overlying a portion of the {30-31} crystalline surface region;
a laser stripe region formed overlying the active region, the laser stripe region being characterized by a cavity orientation parallel to a projection of the c-direction, the laser stripe region having a first end and a second end;
a first facet provided on the first end of the laser stripe region, the first facet being substantially orthogonal to the laser stripe region; and
a second facet provided on the second end of the laser stripe, the second facet being substantially orthogonal to the laser stripe region, wherein the {30-31} crystalline surface region is off-cut less than +/−3 degrees toward or away from a c-plane, and the active region is configured to emit light characterized by a wavelength ranging from about 500 nm to about 580 nm, or from about 430 nm to about 480 nm.
12. The system of claim 11 wherein each of the first facet and the second facet is sufficiently smooth such that each of the first facet and the second facet acts as a mirror surface.
13. The system of claim 11 wherein the laser stripe region being characterized by a cavity orientation substantially parallel to a projection of the c-direction.
14. The system of claim 11 wherein the {30-31} crystalline surface region is provided on a substrate.
15. A system comprising:
a display; and
a laser device configured to provide light for the display, the laser device comprising:
a {30-31} crystalline surface region comprising gallium and nitrogen;
an active region formed overlying a portion of the {30-31} crystalline surface region;
a laser stripe region formed overlying the active region, the laser stripe region being characterized by a cavity orientation parallel to a projection of the c-direction, the laser stripe region having a first end and a second end;
a first semipolar surface facet provided on the first end of the laser stripe region; and
a second semipolar surface facet provided on the second end of the laser stripe region;
wherein the optical device comprises one or more cladding layers that are substantially aluminum-free, and the {30-31} crystalline surface region is off-cut less than +/−3 degrees toward or away from a c-plane.
16. The system of claim 15 wherein the active region is configured to emit light characterized by a wavelength ranging from about 500 nm to about 580 nm, or from about 430 nm to about 480 nm.
17. The system of claim 15 wherein each of the one or more cladding layers comprises less than about 2% mole fraction of AlN.
18. The system of claim 15 wherein the {30-31} crystalline surface region is provided on a substrate.
19. The system of claim 15 wherein the laser stripe region is characterized by a cavity orientation substantially parallel to a projection of the c-direction.
20. The system of claim 15 wherein the one or more cladding layers comprise a plurality of cladding layers.