Memory with single-event latchup prevention circuitry
An integrated circuit that includes an array of random-access memory cells is provided. Each memory cell may include inverting circuits formed from pull-up transistors and pull-down transistors and also access transistors coupled to the inverting circuits. The pull-up transistors may be formed in an n-well. The memory cells may also be coupled to single event latch-up (SEL) prevention circuitry. The SEL prevention circuitry may include a clamping circuit, a voltage sensing circuit, and a driver circuit. In response to a single event alpha particle strike at one of the memory cells, a temporary voltage rise may be presented at the clamping circuit. The voltage sensing circuit may detect the voltage rise and direct the driver circuit to bias the n-well into deep reverse bias region. Operated in this way, the SEL prevention circuitry can mitigate SEL while minimizing memory cell leakage.
1. An integrated circuit, comprising:
a memory cell that includes an n-channel transistor and a p-channel transistor coupled in series between a power supply line and a pull-down node; and
single event latch-up prevention circuitry that is connected to the pull-down node and the p-channel transistor in the memory cell.
2. The integrated circuit of claim 1 , wherein the single event latch-up prevention circuitry comprises:
a clamping circuit that is connected between the pull-down node and a ground line.
3. The integrated circuit of claim 2 , wherein the clamping circuit comprises another n-channel transistor that is always turned on during normal operation of the integrated circuit.
4. The integrated circuit of claim 1 , wherein the single event latch-up prevention circuitry comprises:
a voltage sensing circuit having an input that is connected to the pull-down node and an output.
5. The integrated circuit of claim 4 , wherein the voltage sensing circuit comprises a comparator having a first input that is directly connected to the pull-down node and a second input that receives a reference voltage.
6. The integrated circuit of claim 4 , wherein the single event latch-up prevention circuitry further comprises:
a driver circuit that receives a control signal from the output of the voltage sensing circuit and that provides a selected one of first and second voltages to the p-channel transistor in the memory cell.
7. The integrated circuit of claim 6 , wherein the driver circuit comprises a multiplexer having a first input that receives the first voltage, a second input that receives the second voltage, and an output that is coupled to the p-channel transistor in the memory cell.
8. The integrated circuit of claim 7 , wherein the first voltage is biased at a positive power supply voltage level, and wherein the second voltage is at least 30% greater than the first voltage.
9. The integrated circuit of claim 1 , wherein the p-channel transistor is formed in an n-well, the integrated circuit further comprising:
an n-well tap formed in the n-well that is directly driven by the single event latch-up prevention circuitry.
10. The integrated circuit of claim 1 , further comprising:
an additional memory cell that includes another n-channel transistor and another p-channel transistor coupled in series between the power supply line and the pull-down node, wherein the p-channel transistor and the another p-channel transistor have body terminals that are connected to the single event latch-up prevention circuitry.
11. A method of operating an integrated circuit that includes a memory cell that is coupled to single event latch-up prevention circuitry, the method comprising:
loading data onto the memory cell;
with the single event latch-up prevention circuitry, detecting for a single event latch-up in the memory cell; and
in response to detecting the single event latch-up, activating the single event latch-up prevention circuitry to mitigate the single event latch-up in the memory cell.
12. The method of claim 11 , wherein detecting for the single event latch-up comprises outputting a temporary voltage rise at a clamping circuit in the single event latch-up prevention circuitry.
13. The method of claim 12 , wherein detecting for the single event latch-up further comprises determining whether the temporary voltage rise exceeds a predetermined threshold level.
14. The method of claim 11 , further comprising:
while the single event latch-up prevention circuitry is deactivated, using the single event latch-up prevention circuitry to provide a first voltage to an n-well in the memory cell.
15. The method of claim 14 , wherein activating the single event latch-up prevention circuitry comprises using the single event latch-up prevention circuitry to provide a second voltage that is greater than that first voltage to the n-well in the memory cell.
16. The method of claim 15 , wherein the second voltage is at least 40% greater than the first voltage.
17. The method of claim 15 , wherein the using the single event latch-up prevention circuitry to provide the second voltage to the n-well comprises reverse biasing the n-well.