Redistribution layers in semiconductor packages and methods of forming same

1. A method comprising:

encapsulating a first integrated circuit die in an encapsulant;

forming redistribution layers (RDLs) over the first integrated circuit die and the encapsulant, wherein the RDLs comprise:

a first conductive via over the first integrated circuit die; and

a conductive line electrically connecting the first conductive via to a second conductive via, the conductive line comprising:

a first segment over the first integrated circuit die and having a first width; and

a second segment extending over a first boundary between the first integrated circuit die and the encapsulant and a second boundary between a second integrated circuit die and the encapsulant, the second segment having a second width along an entire length of the second segment between the first and second boundaries, the second width being larger than the first width.

2. The method of claim 1 , wherein the second conductive via is disposed over the encapsulant.

3. The method of claim 1 , wherein the second conductive via is disposed over a second integrated circuit die.

4. The method of claim 1 , wherein the second segment includes a first bend, the first bend having a first angle.

5. The method of claim 4 , wherein the first angle is greater than about 90°.

6. The method of claim 4 , wherein the first angle is less than about 90°.

7. The method of claim 4 , wherein the first angle is about 90°.

8. A method comprising:

forming a first package comprising:

forming an electrical connector over a carrier substrate;

attaching a first die and a second die to the carrier substrate, the electrical connector extending from a back side of the first die to an active side of the first die, the active side being opposite the back side, the electrical connector being adjacent the first die and the second die;

encapsulating the first die, the second die, and the electrical connector with a molding compound; and

forming a redistribution structure overlying active sides of the first die and the second die and the molding compound, the forming the redistribution structure comprising:

forming a first conductive via over the active side of the first die;

forming a second conductive via over the active side of the second die; and

forming a conductive line electrically connecting the first conductive via to the second conductive via, the conductive line comprising a first segment, a second segment, and a third segment, the first segment being over the first die and having a first width, the second segment extending over a first boundary between the first die and the molding compound and over a second boundary between the second die and the molding compound, the second segment having a second width larger than the first width, the third segment being over the second die and having a third width smaller than the second width, the second segment comprising a first bend, the first bend having a first angle, the second segment further comprises three sub-segments, a first sub-segment being over the first boundary, a second sub-segment being over the encapsulant, and a third sub-segment being over the second boundary, the first and third sub-segments being parallel with each other.

9. The method of claim 8 , wherein forming the first package further comprises:

forming a first set of conductive connectors over and electrically coupled to the redistribution structure; and

removing the carrier substrate.

10. The method of claim 8 further comprising:

bonding a second package to the first package using a second set of conductive connectors, the second package being proximate the back sides of the first die and the second die.

11. The method of claim 8 , wherein the first angle is greater than about 90°.

12. The method of claim 8 , wherein the first angle is less than about 90°.

13. The method of claim 8 , wherein the first angle is about 90°.

14. A method comprising:

encapsulating a first integrated circuit die and a second integrated circuit die in an encapsulant;

forming a first conductive via over the first integrated circuit die;

forming a second conductive via over the second integrated circuit die;

forming a conductive line over the first integrated circuit die, the encapsulant, and the second integrated circuit die, the conductive line electrically connecting the first conductive via to the second conductive via, the conductive line comprising:

a first segment over the first integrated circuit die and having a first width;

a second segment over the first integrated circuit die having a second width larger than the first width, the second segment extending over a first boundary between the first integrated circuit die and the encapsulant and a second boundary between the encapsulant and the second integrated circuit die, the second segment comprising a first bend, the first bend having a first angle, the first angle is greater than about 90°, the second segment further comprises three sub-segments, a first sub-segment being over the first boundary, a second sub-segment being over the encapsulant, and a third sub-segment being over the second boundary, the first and third sub-segments being parallel with each other; and

a third segment over the second integrated circuit die and having a third width smaller than the second width, the second segment being disposed between the first segment and the third segment.

15. The method of claim 14 , wherein the second segment of the conductive line has the second width from the first integrated circuit die to the second integrated circuit die.

16. The method of claim 14 further comprising:

before encapsulating the first integrated circuit die and the second integrated circuit die:

forming a first electrical connector and a second electrical connector over a carrier substrate; and

attaching the first integrated circuit die and the second integrated circuit die to the carrier substrate, the first and second electrical connectors extending from a back side of the first integrated circuit die to an active side of the first integrated circuit die, the active side being opposite the back side, the first and second electrical connectors being adjacent the first integrated circuit die and the second integrated circuit die.

17. The method of claim 16 further comprising:

forming a second conductive line over and electrically coupled to the conductive line;

forming a first set of conductive connectors over and electrically coupled to the second conductive line; and

removing the carrier substrate.

18. The method of claim 17 further comprising:

bonding a package structure to the first and second electrical connectors using a second set of conductive connectors, the package structure being proximate the back sides of the first integrated circuit die and the second integrated circuit die.

19. The method of claim 1 further comprising:

before encapsulating the first integrated circuit die:

forming a first electrical connector and a second electrical connector over a carrier substrate; and

attaching the first integrated circuit die to the carrier substrate, the first and second electrical connectors extending from a back side of the first integrated circuit die to an active side of the first integrated circuit die, the active side being opposite the back side, the first and second electrical connectors being adjacent the first integrated circuit die.