Stabilized, high-doped silicon carbide
Stabilized, high-doped silicon carbide is described. A silicon carbide crystal is grown on a substrate using chemical vapor deposition so that the silicon carbide crystal includes a dopant and the strain compensating component. The strain compensating component can be an isoelectronic element and/or an element with the same majority carrier type as the dopant. The silicon carbide crystal can then be cut into silicon carbide wafers. In some embodiments, the dopant is n-type and the strain compensating component is selected from a group comprising germanium, tin, arsenic, phosphorus, and combinations thereof. In some embodiments, the strain compensating component comprises germanium and the dopant is nitrogen.
1. A method of producing silicon carbide comprising:
placing a seed in a growth zone;
introducing a source material, a nitrogen dopant and strain compensating component in the growth zone; and
sublimating a silicon carbide crystal on the seed by heating the growth zone such that the silicon carbide crystal includes the nitrogen dopant at a nitrogen concentration of from 1×10 18 cm −3 to 1×10 21 cm −3 in the silicon carbide crystal and the strain compensating component is selected from a group comprising germanium, tin, arsenic, phosphorus, and combinations thereof;
wherein the strain compensating component comprises an isoelectronic element and/or an element with the same majority carrier type as the nitrogen dopant, and the silicon carbide crystal is grown so that a concentration of the strain compensating component in the silicon carbide crystal is from 2×10 18 cm −3 to 2×10 20 cm −3 .
2. The method of claim 1 further comprising cutting the silicon carbide crystal into wafers.
3. The method of claim 1 wherein the strain compensating component comprises germanium.
4. The method of claim 1 wherein the concentration of nitrogen in the silicon carbide crystal is from 1×10 18 cm −3 to 1.8×10 20 cm −3 .