Nitrogen-containing ligands and their use in atomic layer deposition methods
Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising nitrogen-containing ligands are provided. Also provided are nitrogen-containing ligands useful in the methods of the invention and metal coordination complexes comprising these ligands.
1. A metal coordinating ligand having a formula
wherein each R is independently hydrogen, C 1-6 alkyl, acyl, aldehyde, keto or C 2-4 alkenyl, provided that at least one of R 1 , R 2 , R 3 and R 4 is not methyl.
2. A metal coordination complex which has a formula
wherein each R is independently hydrogen, C 1-6 alkyl, acyl, aldehyde, keto or C 2-4 alkenyl, L is one or more neutral, anionic or mixed ligands, and M is a transition metal ion or a boron group ion, provided that at least one of R 1 , R 2 , R 3 and R 4 is not methyl.
3. The metal coordination complex of claim 2 , wherein the transition metal ion or the boron group ion is selected from the group consisting of aluminum, titanium, tungsten, zirconium, vanadium, niobium, tantalum, chromium, molybdenum, palladium, platinum, rhodium, iridium, silver, gold, hafnium, manganese, ruthenium and copper.
4. An apparatus comprising:
a deposition chamber; and
the metal coordination complex of claim 2 .
5. The apparatus of claim 4 , wherein the metal coordination complex is in the vapor phase.