Dual-port semiconductor memory and first in first out (FIFO) memory having electrically floating body transistor
Multi-port semiconductor memory cells including a common floating body region configured to be charged to a level indicative of a memory state of the memory cell. The multi-port semiconductor memory cells include a plurality of gates and conductive regions interfacing with said floating body region. Arrays of memory cells and method of operating said memory arrays are disclosed for making a memory device.
1. A multi-port semiconductor memory cell comprising:
a plurality of gates;
a common body region insulated from said plurality of gates and of a first conductivity type configured to store a charge that is indicative of a memory state of said multi-port semiconductor memory cell; and
a plurality of conductive regions of a second conductivity type,
wherein adjacent ones of each of said plurality of gates are separated by a respective one of the plurality of conductive regions, and wherein the common body region extends continuously beneath at least one of the plurality of conductive regions;
wherein one of said plurality of conductive regions of a second conductivity type is electrically connected to a back bias terminal; and
wherein applying a voltage to said back bias terminal results in at least two stable common body region charge levels.
2. The multi-port semiconductor memory cell of claim 1 , wherein the plurality of conductive regions is in electrical communication with the common body region, and further wherein each of the plurality of conductive regions is spaced apart from the other of the plurality of conductive regions.
3. The multi-port semiconductor memory cell of claim 1 , wherein at least a portion of the common body region separates each of the plurality of conductive regions from the others of the plurality of conductive regions.
4. The multi-port semiconductor memory cell of claim 1 , wherein the multi-port semiconductor memory cell includes a total number of ports, wherein said plurality of conductive regions comprises a total number of conductive regions, and wherein said plurality of gates comprises a total number of gates, wherein the total number of ports is equal to the total number of gates, and further wherein the total number of conductive regions is one more than the total number of gates.
5. The multi-port semiconductor memory cell of claim 4 , wherein one of said ports is configured to perform a holding operation.
6. The multi-port semiconductor memory cell of claim 1 , wherein the multi-port semiconductor memory cell includes a fin structure, and further wherein the fin structure includes the common body region.
7. The multi-port semiconductor memory cell of claim 1 , wherein said voltage applied to said back bias terminal is a constant positive voltage bias.
8. The multi-port semiconductor memory cell of claim 1 , wherein said voltage applied to said back bias terminal is a periodic pulse of positive voltage.
9. A semiconductor memory cell comprising:
a substrate region;
a plurality of gates;
a common body region of a first conductivity type configured to store a charge that is indicative of a memory state of said semiconductor memory cell;
a plurality of conductive regions of a second conductivity type,
wherein adjacent ones of each of said plurality of gates are separated by a respective one of the plurality of conductive regions, and wherein the common body region extends continuously beneath at least one of the plurality of conductive regions; and
an insulator layer located beneath said common body region insulating said common body region from the substrate;
wherein one of said plurality of conductive regions of a second conductivity type is electrically connected to a back bias terminal; and
wherein applying a voltage to said back bias terminal results in at least two stable common body region charge levels.
10. The multi-port semiconductor memory cell of claim 9 , wherein the plurality of conductive regions is in electrical communication with the common body region, and further wherein each of the plurality of conductive regions is spaced apart from the other of the plurality of conductive regions.
11. The multi-port semiconductor memory cell of claim 9 , wherein at least a portion of the common body region separates each of the plurality of conductive regions from the others of the plurality of conductive regions.
12. The multi-port semiconductor memory cell of claim 9 , wherein the multi-port semiconductor memory cell includes a fin structure, and further wherein the fin structure includes the common body region.
13. The multi-port semiconductor memory cell of claim 9 , wherein said voltage applied to said back bias terminal is a constant positive voltage bias.
14. The multi-port semiconductor memory cell of claim 9 , wherein said voltage applied to said back bias terminal is a periodic pulse of positive voltage.
15. A multi-port semiconductor memory cell comprising:
a plurality of gates;
a common body region of a first conductivity type configured to store a charge that is indicative of a memory state of said multi-port semiconductor memory cell; and
a plurality of conductive regions of a second conductivity type,
wherein adjacent ones of each of said plurality of gates are separated by a respective one of the plurality of conductive regions, and wherein the common body region extends continuously beneath at least one of the plurality of conductive regions;
wherein said multi-port semiconductor memory cell is configured to assume at least two stable common body region charge levels.
16. The multi-port semiconductor memory cell of claim 15 , wherein the plurality of conductive regions is in electrical communication with the common body region, and further wherein each of the plurality of conductive regions is spaced apart from the other of the plurality of conductive regions.
17. The multi-port semiconductor memory cell of claim 15 , wherein at least a portion of the common body region separates each of the plurality of conductive regions from the others of the plurality of conductive regions.
18. The multi-port semiconductor memory cell of claim 15 , wherein the multi-port semiconductor memory cell includes a total number of ports, wherein said plurality of conductive regions comprises a total number of conductive regions, and wherein said plurality of gates comprises a total number of gates, wherein the total number of ports is equal to the total number of gates, and further wherein the total number of conductive regions is one more than the total number of gates.
19. The multi-port semiconductor memory cell of claim 18 , wherein at least one of said ports is configured to perform a holding operation.
20. The multi-port semiconductor memory cell of claim 15 , wherein the multi-port semiconductor memory cell includes a fin structure, and further wherein the fin structure includes the common body region.