IP Library Granted Patent US 9,922,931
Granted Patent B2
US 9,922,931 · App. 15/419,091 · Granted Mar 20, 2018

Interconnect structure, printed circuit board, semiconductor device, and manufacturing method for interconnect structure

Inventors: Hiroaki Matsubara (Yokohama, JP); Tomoshige Chikai (Yokohama, JP); Naoki Hayashi (Yokohama, JP); Toshihiro Iwasaki (Yokohama, JP)
Assignee: J-DEVICES CORPORATION
H01L23/5384H01L21/76802H01L21/76877H01L23/5386
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Quick Facts
Patent No.
US 9,922,931
App. No.
15/419,091
Granted
Mar 20, 2018
Kind
B2
Abstract

An interconnect structure in which the current capacity of an interconnect pattern involving a large amount of current is increased without preventing the miniaturization of signal lines and increasing the film thickness. The interconnect structure includes a resin layer; and interconnects formed on the resin layer, wherein the resin layer has a plurality of parallel grooves in an area in which the interconnects are formed, and the interconnects are formed of a plating film created on a resin layer front surface in the area, in which the interconnects are formed, and on inner wall surfaces of the plurality of grooves.

Claims (11)

1. An interconnect structure including:

a resin layer; and

interconnects formed on the resin layer, wherein

the resin layer has a plurality of grooves in an area in which the interconnects are formed, the grooves being formed in the front surface of the resin layer, extending in a direction parallel to the front surface of the resin layer and are parallel to each other and

the interconnects are formed of a plating film created on a resin layer front surface in the area, in which the interconnects are formed, and on inner wall surfaces of the plurality of grooves.

2. A printed circuit board including the interconnect structure according to claim 1 .

3. A semiconductor device including the interconnect structure according to claim 1 .

4. The semiconductor device according to claim 3 , wherein the interconnects constituting the interconnect structure are in direct contact with a front surface of a semiconductor chip.

5. A manufacturing method for an interconnect structure, the method including:

a step of forming a plurality of grooves in a front surface of a resin layer in an area in which interconnects are formed, the grooves extending in a direction parallel to the front surface of the resin layer and are parallel to each other; and

a step of forming a plating film on a resin layer front surface in an area in which the interconnects are formed and on inner wall surfaces of the plurality of grooves.

Assignments (3)
CORRECTIVE ASSIGNMENT TO CORRECT THE CONVEYING PARTY NAME PREVIOUSLY RECORDED AT REEL: 53597 FRAME: 184. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Mar 5, 2021
From: J-DEVICES CORPORATION
To: AMKOR TECHNOLOGY JAPAN, INC.
Reel/Frame 055605/0060 →
CHANGE OF NAME Recorded Aug 25, 2020
From: J-DEVICES CO., LTD.
To: AMKOR TECHNOLOGY JAPAN, INC.
Reel/Frame 053597/0184 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 30, 2017
From: MATSUBARA, HIROAKI; CHIKAI, TOMOSHIGE; HAYASHI, NAOKI; IWASAKI, TOSHIHIRO
To: J-DEVICES CORPORATION
Reel/Frame 041124/0456 →
Priority Claims (1)
JP 2016-44081 · Mar 8, 2016 · national
Continuity (1)
Related Publication 20170263560A1 · Sep 14, 2017