Proximity coupling of interconnect packaging systems and methods

1. A method of manufacturing a semiconductor die assembly, the method comprising:

positioning a third semiconductor die over a substrate, the third semiconductor die having a first plurality of through-silicon vias coupled to a corresponding first plurality of bond sites on the substrate;

positioning a first semiconductor die over the third semiconductor die, the first semiconductor die having a first coupling face that faces away from the substrate, and the first coupling face having a first conductive pad;

locating a spacer over the substrate spaced laterally from the first and third semiconductor dies, the spacer including a second plurality of through-silicon vias coupled to a corresponding second plurality of bond sites on the substrate, wherein the spacer has a height greater than a height of the third semiconductor die;

disposing solder over an alignment pad on the spacer;

positioning a second semiconductor die over the first semiconductor die, the spacer, and the solder, the second semiconductor die having a second coupling face having a second conductive pad, the second semiconductor die being positioned such that the second conductive pad faces and is generally aligned with the first conductive pad, and the first conductive pad and the second conductive pad being separated by a gap, wherein the second semiconductor die is able to move with respect to the first semiconductor die; and

heating the solder to a flowable state, whereby the solder further positions the second semiconductor die with respect to the first semiconductor die and thereby precisely aligns the first and second conductive pads.

2. The method of claim 1 , wherein the gap is from about 1 to about 10 microns.

3. The method of claim 1 wherein the first conductive pad and the second conductive pad separated by a gap comprise a proximity coupling interconnect between the first semiconductor die and the second semiconductor die.

4. The method of claim 1 , further comprising electrically coupling the first semiconductor die and the substrate through the first plurality of through-silicon vias.

5. The method of claim 1 , further comprising disposing underfill material in an area between the substrate and the second semiconductor die.

6. The method of claim 1 , further comprising disposing a thermal fill material over the first semiconductor die, the second semiconductor die, and the spacer.

7. The method of claim 1 , further comprising disposing a thermal lid over the substrate, the thermal lid covering the first semiconductor die, the second semiconductor die, and the spacer.

8. A method of manufacturing a semiconductor die assembly, the method comprising:

providing a substrate having a plurality of bond pads;

positioning a third semiconductor die over a substrate, the third semiconductor die having a first plurality of through-silicon vias coupled to a corresponding first subset of the plurality of bond pads on the substrate;

positioning a first semiconductor die over the third semiconductor die, the first semiconductor die having a first coupling face that faces away from the substrate;

positioning a spacer over the substrate spaced laterally from the first and third semiconductor dies, the spacer including a second plurality of through-silicon vias coupled to a corresponding second subset of the plurality of bond pads on the substrate, wherein the spacer has a height greater than a height of the third semiconductor die;

positioning a second semiconductor die over the first semiconductor die and the spacer, the second semiconductor die having a second coupling face and bond pads at the second coupling face, such that the second coupling face faces the first coupling face;

wherein a first conductive pad on the first coupling face and a second conductive pad on the second coupling face form a proximity coupling interconnect between the first semiconductor die and the second semiconductor die, the first conductive pad and the second conductive pad being aligned and spaced apart by a gap distance; and

electrically connecting at least one of the bond pads of the second semiconductor die to a corresponding at least one of the second plurality of through-silicon vias to define the alignment of the first conductive pad and the second conductive pad.

9. The method of claim 8 , wherein the gap is from about 1 to about 10 microns.

10. The method of claim 8 wherein electrically connecting the at least one of the bond pads of the second semiconductor die to the corresponding at least one of the second plurality of through silicon vias comprises forming a solder interconnect and wherein the proximity coupling interconnect comprises a capacitive coupling interconnect.

11. The method of claim 8 , wherein the first coupling face has a first passivation layer extending beyond a height of the first conductive pad and the second coupling face has a second passivation layer extending beyond a height of the second conductive pad, the first and second passivation layers defining the gap distance between the first conductive pad and the second conductive pad.

12. The method of claim 8 , further comprising disposing underfill material in an area between the substrate and the second semiconductor die.

13. The method of claim 8 , further comprising disposing a thermal fill material over the first semiconductor die and the second semiconductor die.

14. The method of claim 8 , further comprising disposing a thermal lid over the substrate, the thermal lid covering the first semiconductor die and the second semiconductor die.