Memory cell structures
View Patent ↗The present disclosure includes memory cell structures and method of forming the same. One such method includes forming a memory cell includes forming, in a first direction, a select device stack including a select device formed between a first electrode and a second electrode; forming, in a second direction, a plurality of sacrificial material lines over the select device stack to form a via; forming a programmable material stack within the via; and removing the plurality of sacrificial material lines and etching through a portion of the select device stack to isolate the select device.
1. A method of forming a memory cell, comprising:
forming a plurality of stack structures in a length direction parallel to one another, and separated from each other in a first direction perpendicular to the length direction, wherein each one of the plurality of stack structures comprises:
plural select device stacks; and
a dielectric material comprising plural segments, wherein forming the plurality of stack structures comprises:
forming openings in the plural select device stacks in the length direction and forming the dielectric material within the openings;
subsequent to forming the plurality of stack structures, forming a plurality of sacrificial material lines in a direction perpendicular to the length direction and over the plural select device stacks and the dielectric material to form trenches;
subsequent to formation of the plurality of sacrificial material lines and the formation of the trenches, forming a programmable material in each of the trenches, the trenches extending in the length direction and including a bottom and sidewalls,
wherein the programmable material contacts at least a portion of a sacrificial material line, the dielectric material and an electrode material of the plural select device stacks;
subsequent to the formation of the programmable material in each of the trenches, forming on the programmable material and within the trench, a different electrode material extending in the length direction; and
subsequent to the formation of the different electrode material, removing the plurality of sacrificial material lines.
2. The method of claim 1 , wherein forming the programmable material comprises forming the programmable material via a damascene process.
3. The method of claim 1 , wherein forming the plurality of stack structures comprises forming at least one of a metal-semiconductor-metal (MSM) stack structure, a metal-insulator-metal (MIM) stack structure, and a conductor-semiconductor-conductor (CSC) stack structure.
4. The method of claim 1 , wherein forming the programmable material comprises forming at least one of resistive random access memory (RRAM) material, conductive bridging random access memory (CBRAM) material, phase-change random access memory (PCRAM) material, and/or spin-transfer-torque random access memory (STT-RAM) material.
5. The method of claim 1 , wherein forming the programmable material and forming the different electrode material comprises forming a plurality of programmable material cell stack structures via a damascene process.
6. The method of claim 1 , further comprising:
subsequent to removal of the plurality of sacrificial material lines, removing a portion of each of the plural select device stacks to isolate a select device of each of the plural select device stacks.
7. A method of forming a memory cell, comprising:
forming a first stack structure comprising a first electrode material over a substrate material, a non-ohmic select device material over the first electrode material, and a second electrode material over the non-ohmic select device material;
forming openings in the first stack structure in a first direction and forming a dielectric material within the openings;
subsequent to forming the dielectric material within the openings, forming a sacrificial material over the second electrode material and the dielectric material, the sacrificial material contacting the second electrode and the dielectric material;
subsequent to forming the sacrificial material, forming a second stack structure comprising a programmable material contacting the second electrode and the dielectric material within a trench formed by the sacrificial material formation,
wherein the programmable material contacts at least a portion of the sacrificial material;
exhuming a portion of the sacrificial material subsequent to forming the second stack structure; and
subsequent to exhuming the portion of the sacrificial material, etching through a portion of the first stack structure to isolate the non-ohmic select device material.
8. The method of claim 7 , wherein etching through a portion of the first stack structure comprises etching through the first electrode material to isolate the non-ohmic select device material.
9. The method of claim 7 , wherein etching through a portion of the first stack structure comprises etching through the first electrode material, the non-ohmic select device material, and the second electrode material to isolate the non-ohmic select device material.
10. The method of claim 7 , comprising forming a third electrode over the second stack structure.
11. The method of claim 7 , wherein exhuming a portion of the sacrificial material comprises exhuming a plurality of carbon material sacrificial material lines.
12. The method of claim 7 , wherein exhuming a portion of the sacrificial material comprises removing a plurality of sacrificial material lines utilizing an oxygen plasma material.
13. The method of claim 7 , wherein forming the second stack structure comprises forming the programmable material via a damascene process.