Tunable ionic electronic transistor
Various technologies pertaining to a transistor having a variable-conductance channel with a non-volatile tunable conductance are described herein. The transistor comprises source and drain electrodes separated by a conducting channel layer. The conducting channel layer is separated from an electrochemical gate (ECG) layer by an electrolyte layer that prevents migration of electrons between the channel and the ECG but allows ion migration. When a voltage is applied between the channel and the ECG, electrons flow from one to the other, which causes a migration of ions from the channel to the ECG or vice versa. As ions move into or out of the channel layer, the conductance of the channel changes. When the voltage is removed, the channel maintains its conductance state.
1. A transistor device, comprising:
a variable-conductance channel layer;
a drain electrode in physical contact with the channel layer;
a source electrode in physical contact with the channel layer and physically separated from the drain electrode by the channel layer;
an electrolyte layer positioned on top of the channel layer; and
an electrochemical gate (ECG) layer positioned on top of the electrolyte layer, wherein the electrolyte layer physically separates the ECG layer and the channel layer, and wherein responsive to a voltage pulse being applied between the ECG layer and the channel layer, ions migrate from the ECG layer to the channel layer or from the channel layer to the ECG layer, and a conductance of the channel layer changes.
2. The transistor device of claim 1 , wherein the variable-conductance channel layer comprises a lithium compound.
3. The transistor device of claim 2 , wherein the lithium compound comprises lithium-cobalt-oxide (LiCoO 2 ).
4. The transistor device of claim 3 , wherein the channel layer has a thickness of 1-120 nanometers.
5. The transistor device of claim 1 , wherein the electrolyte layer comprises lithium phosphorous oxynitride (LiPON).
6. The transistor device of claim 5 , wherein the electrolyte layer has a thickness of 20-400 nanometers.
7. The transistor device of claim 1 , wherein the ECG layer comprises silicon.
8. The transistor device of claim 7 , wherein the ECG layer has a thickness of 10-50 nanometers.
9. The transistor device of claim 1 , wherein the channel layer and the ECG layer comprise a same material.
10. The transistor device of claim 9 , wherein the electrolyte layer comprises a solid electrolyte.