Substrate processing apparatus and precursor gas nozzle
A substrate processing apparatus includes: a process chamber accommodating substrates; a heating system for heating the process chamber to a predetermined temperature; a precursor gas supply system including a precursor gas nozzle and for supplying a precursor gas from the precursor gas nozzle to the process chamber; a reaction gas supply system configured to supply a reaction gas reacting with the precursor gas in the process chamber; and a control part configured to control the heating system, the precursor gas supply system and the reaction gas supply system to form a film on each of the plurality of substrates by performing a process, while heating the process chamber accommodating the plurality of substrates to the predetermined temperature. The process includes supplying the precursor gas from the precursor gas nozzle to the process chamber and supplying the reaction gas to the process chamber.
1. A substrate processing apparatus, comprising:
a process chamber including a boat, which is installed in the process chamber and configured to accommodate a plurality of substrates to be stacked therein;
a heating system configured to heat the process chamber to a predetermined temperature;
a precursor gas supply system including a precursor gas nozzle, and configured to supply a precursor gas from the precursor gas nozzle to the process chamber, wherein the precursor gas nozzle is installed to extend along a direction in which the plurality of substrates is stacked in the boat, wherein a plurality of holes formed on the precursor gas nozzle consists of: a plurality of supply holes formed above a lower end of the boat and a plurality of depressurization holes formed below the lower end of the boat, wherein an internal pressure of the precursor gas nozzle is reduced through the plurality of depressurization holes, and wherein aperture areas of the plurality of depressurization holes are each configured to be greater than an aperture area of a supply hole, which is the most adjacent to the plurality of depressurization holes, among the plurality of supply holes;
a reaction gas supply system configured to supply a reaction gas reacting with the precursor gas in the process chamber; and
a controller configured to control the heating system, the precursor gas supply system and the reaction gas supply system to form a film on each of the plurality of substrates by performing a process, while heating the process chamber accommodating the plurality of substrates to the predetermined temperature, the process including;
supplying the precursor gas from the precursor gas nozzle to the process chamber; and
supplying the reaction gas to the process chamber.
2. The apparatus of claim 1 , wherein respective total aperture area values of the plurality of supply holes and the plurality of depressurization holes and a ratio between the total aperture area value of the plurality of supply holes and the total aperture area value of the plurality of depressurization holes are set such that a product of the internal temperature and the internal pressure of the precursor gas nozzle has a value with which the precursor gas is not autolyzed inside the precursor gas nozzle.
3. The apparatus of claim 1 , wherein aperture areas of the plurality of supply holes gradually increase from an upstream side of the precursor gas nozzle toward a downstream side of the precursor gas nozzle.
4. The apparatus of claim 1 , wherein each of the plurality of depressurization holes has the same aperture area.
5. The apparatus of claim 1 , wherein a distance between a lowermost supply hole among the plurality of supply holes and an uppermost depressurization hole among the plurality of depressurization holes is greater than a hole diameter of the lowermost supply hole.
6. The apparatus of claim 1 , wherein an uppermost portion of the precursor gas nozzle opens upward.
7. The apparatus of claim 6 , wherein the uppermost portion of the precursor gas nozzle obliquely opens.
8. The apparatus of claim 1 , wherein the precursor gas is an organic-based precursor and the predetermined temperature falls within a range of 400 to 600 degrees C.
9. The apparatus of claim 1 , wherein an uppermost depressurization hole among the plurality of depressurization holes is positioned such that a distance between the uppermost depressurization hole and a lowermost supply hole among the plurality of supply holes is greater than a hole diameter of the lowermost supply hole.
10. A precursor gas nozzle, which is installed to extend along a direction in which a plurality of substrates is stacked in a boat installed in a process chamber,
wherein a plurality of holes formed on the precursor gas nozzle consists of:
a plurality of supply holes formed above a lower end of the boat; and
a plurality of depressurization holes formed below the lower end of the boat,
wherein an internal pressure of the precursor gas nozzle is reduced through the plurality of depressurization holes, and
wherein aperture areas of the plurality of depressurization holes are each configured to be greater than an aperture area of a supply hole, which is the most adjacent to the plurality of depressurization holes, among of the plurality of supply holes.