Light emitting device
The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.
1. A light emitting device comprising:
a semiconductor layer comprising a channel formation region, a source region, and a drain region;
a first insulating film over the semiconductor layer;
a gate electrode over the first insulating film;
a gate wiring over the first insulating film;
a second insulating film over the gate electrode;
a first source wiring over the second insulating film;
a second source wiring over the second insulating film; and
a power supply line over the second insulating film,
wherein the second source wiring overlaps with the semiconductor layer,
wherein the power supply line is electrically connected to one of the source region and the drain region,
wherein the power supply line overlaps with the channel formation region,
wherein the channel formation region comprises a serpentine shape,
wherein the serpentine shape comprises a first region which extends in a direction along the gate wiring and a second region which extends in a direction along the first source wiring,
wherein the first region is longer than the second region, and
wherein a ratio of a channel width W of the channel formation region to a channel length L thereof is from 0.1 to 0.01.
2. A light emitting device comprising:
a semiconductor layer comprising a channel formation region, a source region, and a drain region;
a first insulating film over the semiconductor layer;
a gate electrode over the first insulating film;
a gate wiring over the first insulating film;
a second insulating film over the gate electrode;
a first source wiring over the second insulating film;
a second source wiring over the second insulating film; and
a power supply line over the second insulating film,
wherein the second source wiring overlaps with the semiconductor layer,
wherein the power supply line is electrically connected to one of the source region and the drain region,
wherein the power supply line overlaps with the channel formation region,
wherein the channel formation region comprises a serpentine shape,
wherein the serpentine shape comprises a first region which extends in a direction along the gate wiring and a second region which extends in a direction along the first source wiring,
wherein the second region is longer than the first region, and
wherein a ratio of a channel width W of the channel formation region to a channel length L thereof is from 0.1 to 0.01.
3. A light emitting device comprising:
a semiconductor layer comprising a channel formation region, a source region, and a drain region;
a first insulating film over the semiconductor layer;
a gate electrode over the first insulating film;
a gate wiring over the first insulating film;
a second insulating film over the gate electrode;
a source wiring over the second insulating film; and
a power supply line over the second insulating film,
wherein the source wiring overlaps with the semiconductor layer,
wherein the power supply line is electrically connected to one of the source region and the drain region,
wherein the power supply line overlaps with the channel formation region,
wherein the power supply line includes a region that a width of the power supply line is larger than a width of the source wiring,
wherein the channel formation region comprises a serpentine shape, and
wherein a ratio of a channel width W of the channel formation region to a channel length L thereof is from 0.1 to 0.01.