Plasma processing apparatus and plasma processing method
A plasma processing apparatus including a processing chamber, a radio frequency power source, a monitoring unit, and a calculation unit is provided. In the processing chamber, etching target film is etched by using plasma. The radio frequency power source supplies radio frequency electric power. The monitoring unit monitors light emission of the plasma. The calculation unit estimates an etching amount of plasma etching of the etching target film based on an emission intensity and a correlation between the etching amount of the etching target film and the emission intensity, the emission intensity being obtained when removing, by using the plasma, a deposition film deposited as a result of the plasma etching.
1. A plasma processing apparatus comprising:
a processing chamber in which etching target film is etched by using plasma;
a radio frequency power source that supplies radio frequency electric power for generating the plasma;
a monitoring unit that monitors light emission of the plasma; and
a calculation unit that estimates an etching amount of plasma etching of the etching target film based on an emission intensity and a correlation between the etching amount of the etching target film and the emission intensity, the emission intensity being obtained when removing, by using the plasma, a deposition film deposited as a result of the plasma etching, the correlation being obtained in advance, wherein
the emission intensity is obtained by dividing a first emission intensity by a second emission intensity, and
the first emission intensity is different from the second emission intensity.
2. A plasma processing apparatus comprising:
a processing chamber in which etching target film is etched by using plasma;
a radio frequency power source that supplies radio frequency electric power for generating the plasma;
a monitoring unit that monitors light emission of the plasma;
a calculation unit that estimates an etching amount of plasma etching of the etching target film based on an emission intensity and a correlation between the etching amount of the etching target film and the emission intensity, the plasma etching being performed by repeating an etching step, the emission intensity being obtained when removing, by using the plasma, a deposition film deposited as a result of the plasma etching, the correlation being obtained in advance; and
a control unit that finishes the plasma etching based on the estimated etching amount, wherein
the emission intensity is obtained by dividing a first emission intensity by a second emission intensity, and
the first emission intensity is different from the second emission intensity.
3. The plasma processing apparatus according to claim 1 , wherein
the first emission intensity is an emission intensity of carbon monoxide and the second emission intensity is an emission intensity of argon.
4. A plasma processing method of etching an etching target film by using plasma, the plasma processing method comprising:
monitoring an emission intensity when removing, by using the plasma, a deposition film deposited as a result of plasma etching of the etching target film; and
estimating an etching amount of the plasma etching based on the monitored emission intensity and a correlation between the etching amount of the etching target film and the emission intensity, the correlation being obtained in advance, wherein
the emission intensity is obtained by dividing a first emission intensity by a second emission intensity, and
the first emission intensity is different from the second emission intensity.
5. The plasma processing method according to claim 4 , further comprising
finishing the plasma etching based on the estimated etching amount,
wherein the plasma etching is performed by repeating an etching step.
6. The plasma processing method according to claim 4 , wherein
the first emission intensity is an emission intensity of carbon monoxide and the second emission intensity is an emission intensity of argon.
7. The plasma processing apparatus according to claim 3 , wherein the deposition film is deposited due to plasma using a fluorocarbon gas.