Methods, apparatuses, and circuits for programming a memory device
View Patent ↗Subject matter described pertains to methods, apparatuses, and circuits for programming a memory device.
1. A device, comprising:
an arrangement of materials stacked above a device heater, the arrangement including a separation material, wherein an edge of the separation material laterally extends farther than an edge of a conductor in a first direction, the edge of the separation material laterally extending at least to a location directly above the device heater,
wherein the conductor over the arrangement is offset from directly above the device heater; and
wherein a conductive path from the conductor to the device heater is via the separation material of the arrangement.
2. The device of claim 1 , wherein the device heater is at least partially surrounded by a dielectric.
3. The device of claim 1 , wherein the separation material exhibits a resistance of between about 5 and about 50 percent of the resistance of the device heater.
4. The device of claim 1 , wherein the edge of the conductor is offset a lateral distance from a location directly above the device heater by an amount approximately equal to a multiple of a half-pitch of an applicable lithographic process.
5. The device of claim 1 , wherein the device can change a memory material from a first phase to a second phase.
6. The device of claim 1 , wherein the first phase comprises a crystalline phase, and wherein the second phase comprises an amorphous phase.
7. The device of claim 5 , wherein the first phase comprises an amorphous phase, and wherein the second phase comprises a crystalline phase.
8. The device of claim 1 , wherein the separation material is capable of reducing diffusion between the conductor and an active material included in the arrangement.
9. The device of claim 1 , wherein the device heater is capable of changing a memory material to a rupture phase.
10. A circuit, comprising:
a separation material below a conductor and above a device heater, wherein an edge of the separation material laterally extends farther than an edge of the conductor in a first direction, the edge of the separation material laterally extending at least to a location directly above the device heater, and
a conductive path from the conductor to the device heater,
wherein the conductor and a part of the conductive path are laterally offset from directly above the device heater.
11. The circuit of claim 10 , wherein the device heater is configured to change a phase of a phase material of a memory device.
12. The circuit of claim 11 , wherein the device heater is configured to change the phase of the phase material from a first phase having a first resistance to a second phase having a second resistance that is lower than the first resistance.
13. The circuit of claim 11 , wherein the device heater is configured to change a state of the phase material, while the phase material is in a first phase, from a first state to a second state that is less amorphous than the first state.
14. The circuit of claim 13 , wherein the device heater is configured to change the state of the phase material, while the phase material is in a second phase, from a first state to a second state that is more crystalline than the first state.
15. The circuit of claim 13 , wherein the device heater is configured to change the state of the phase material to the second state after the phase material has been changed to a second phase.
16. The circuit of claim 11 , further comprising:
a conductive plug beneath the device heater, wherein the conductive path comprises a path to the conductive plug.
17. A device, comprising:
an arrangement of materials above a device heater, the arrangement including a first material, wherein an edge of the first material laterally extends farther than an edge of a conductor in a first direction, the edge of the first material laterally extending at least to a location directly above the device heater; and
wherein the conductor is in contact with at least some of the arrangement of materials,
wherein a conductive path from the conductor to the device heater is via the arrangement of materials, and
wherein the device heater and a part of the conductive path are laterally offset from directly below the conductor.
18. The device of claim 17 , wherein the device heater is at least partially disposed within a dielectric material.
19. The device of claim 17 , wherein the device heater is above a switch.
20. The device of claim 17 , wherein the first material comprises:
a separation material, a memory material, or a combination thereof.