Fan-out semiconductor package
A fan-out semiconductor package includes: a fan-out semiconductor package may include: a first interconnection member having a through-hole; a semiconductor chip disposed in the through-hole of the first interconnection member and having an active surface having connection pads disposed thereon and an inactive surface opposing the active surface; an encapsulant encapsulating at least portions of the first interconnection member and the inactive surface of the semiconductor chip; a second interconnection member disposed on the first interconnection member and the active surface of the semiconductor chip; and a reinforcing layer disposed on the encapsulant. The first interconnection member and the second interconnection member respectively include redistribution layers electrically connected to the connection pads of the semiconductor chip.
1. A fan-out semiconductor package comprising:
a semiconductor chip having an active surface having connection pads disposed thereon and an inactive surface opposing the active surface;
a first interconnection member disposed on the active surface of the semiconductor chip:
a second interconnection member having a through-hole, in which the semiconductor chip is disposed;
an encapsulant including a first portion covering the inactive surface of the semiconductor chip and an upper surface of the second interconnection member, and a second portion extending from the first portion to fill at least a portion of the through-hole and cover side surfaces of the semiconductor chip and the second interconnection member; and
a reinforcing layer disposed on the encapsulant,
wherein the first interconnection member includes a redistribution layer electrically connected to the connection pads of the semiconductor chip,
the first portion of the encapsulant is disposed between the reinforcing layer, and the inactive surface of the semiconductor chip and the upper surface of the second interconnection member, and
the reinforcing layer has an elastic modulus greater than that of the encapsulant.
2. The fan-out semiconductor package of claim 1 , wherein the reinforcing layer has a coefficient of thermal expansion lower than that of the encapsulant.
3. The fan-out semiconductor package of claim 1 , wherein the reinforcing layer includes a core material, an inorganic filler, and an insulating resin.
4. The fan-out semiconductor package of claim 3 , further comprising a resin layer disposed on the reinforcing layer,
wherein the resin layer includes an inorganic filler and an insulating resin, and
the reinforcing layer is disposed between the resin layer and the encapsulant.
5. The fan-out semiconductor package of claim 4 , further comprising openings penetrating through the resin layer, the reinforcing layer, and the encapsulant.
6. The fan-out semiconductor package of claim 4 , further comprising a passivation layer disposed on the first interconnection member,
wherein the passivation layer includes an inorganic filler and an insulating resin, and
the first interconnection member is disposed between the passivation layer and the semiconductor chip.
7. The fan-out semiconductor package of claim 6 , wherein a composition of the resin layer and a composition of the passivation layer are the same as each other.
8. The fan-out semiconductor package of claim 3 , wherein the encapsulant includes an inorganic filler and an insulating resin, and a weight percentage of the inorganic filler included in the reinforcing layer is greater than that of the inorganic filler included in the encapsulant.
9. The fan-out semiconductor package of claim 8 , wherein a weight percentage of the inorganic filler included in one side of the reinforcing layer in contact with the encapsulant and a weight percentage of the inorganic filler included in the other side of the reinforcing layer opposing the one side in relation to the core material are different from each other.
10. The fan-out semiconductor package of claim 9 , wherein a 1 <a 2 <a 3 , in which a 1 is the weight percentage of the inorganic filler included in the encapsulant, a 2 is the weight percentage of the inorganic filler included in the one side of the reinforcing layer in contact with the encapsulant, and a 3 is the weight percentage of the inorganic filler included in the other side of the reinforcing layer opposing the one side.
11. The fan-out semiconductor package of claim 1 , wherein the reinforcing layer includes an inorganic filler and an insulating resin and does not include a core material.
12. The fan-out semiconductor package of claim 11 , wherein the encapsulant includes an inorganic filler and an insulating resin, and a weight percentage of the inorganic filler included in the reinforcing layer is greater than that of the inorganic filler included in the encapsulant.
13. The fan-out semiconductor package of claim 1 , further comprising a passivation layer disposed on the first interconnection member,
wherein the passivation layer includes an inorganic filler and an insulating resin, and
the first interconnection member is disposed between the passivation layer and the semiconductor chip.
14. The fan-out semiconductor package of claim 13 , wherein the first interconnection member includes an insulating layer including an inorganic filler and an insulating resin, and a weight percentage of the inorganic filler included in the passivation layer is greater than that of the inorganic filler included in the insulating layer of the first interconnection member.
15. The fan-out semiconductor package of claim 1 ,
wherein
the second interconnection member includes a first insulating layer penetrated by the through-hole, a first redistribution layer in contact with the first interconnection member and embedded in the first insulating layer, and a second redistribution layer disposed on the other surface of the first insulating layer opposing one surface of the first insulating layer in which the first redistribution layer is embedded, and
the first and second redistribution layers are electrically connected to the connection pads.
16. The fan-out semiconductor package of claim 15 , wherein the second interconnection member further includes:
a second insulating layer penetrated by the through-hole, disposed on the first insulating layer, and covering the second redistribution layer; and
a third redistribution layer disposed on the second insulating layer, and the third redistribution layer is electrically connected to the connection pads.
17. The fan-out semiconductor package of claim 16 , wherein the second redistribution layer is disposed on a level between the active surface and the inactive surface of the semiconductor chip.
18. The fan-out semiconductor package of claim 15 , wherein a distance between the redistribution layer of the first interconnection member and the first redistribution layer is greater than that between the redistribution layer of the first interconnection member and the connection pad.
19. The fan-out semiconductor package of claim 15 , wherein the first redistribution layer has a thickness greater than that of the redistribution layer of the first interconnection member.
20. The fan-out semiconductor package of claim 15 , wherein a lower surface of the first redistribution layer is disposed on a level above a lower surface of the connection pad.
21. The fan-out semiconductor package of claim 1 ,
wherein
the second interconnection member includes:
a first insulating layer penetrated by the through-hole, a first redistribution layer and a second redistribution layer disposed on opposite surfaces of the first insulating layer, respectively,
a second insulating layer penetrated by the through-hole, disposed on the first insulating layer, and covering the first redistribution layer, and
a third redistribution layer disposed on the second insulating layer, and the first to third redistribution layers are electrically connected to the connection pads.
22. The fan-out semiconductor package of claim 21 , wherein the second interconnection member further includes:
a third insulating layer penetrated by the through-hole, disposed on the first insulating layer, and covering the second redistribution layer, and
a fourth redistribution layer disposed on the third insulating layer, and the fourth redistribution layer is electrically connected to the connection pads.
23. The fan-out semiconductor package of claim 21 , wherein the first insulating layer has a thickness greater than that of the second insulating layer.
24. The fan-out semiconductor package of claim 21 , wherein the third redistribution layer has a thickness greater than that of the redistribution layer of the first interconnection member.
25. The fan-out semiconductor package of claim 21 , wherein the first redistribution layer is disposed on a level between the active surface and the inactive surface of the semiconductor chip.
26. The fan-out semiconductor package of claim 21 , wherein a lower surface of the third redistribution layer is disposed on a level below a lower surface of the connection pad.
27. The fan-out semiconductor package of claim 1 , wherein a boundary surface between the encapsulant and the reinforcing layer has an approximately linear shape.
28. The fan-out semiconductor package of claim 1 ,
wherein
the second interconnection member includes an insulating layer penetrated by the through-hole, a first redistribution layer disposed on a first surface of the insulating layer, and a second redistribution layer disposed on a second surface of the insulating layer opposing the first surface of the insulating layer, and
the first and second redistribution layers are electrically connected to the connection pads.
29. A fan-out semiconductor package comprising:
a semiconductor chip having an active surface having connection pads disposed thereon and an inactive surface opposing the active surface;
an encapsulant including a first portion covering the inactive surface of the semiconductor chip;
a first interconnection member disposed on the active surface of the semiconductor chip: and
a reinforcing layer disposed on the encapsulant; and
an insulating member having a through-hole,
wherein the first interconnection member includes a redistribution layer electrically connected to the connection pads of the semiconductor chip,
the first portion of the encapsulant is disposed between the reinforcing layer and the inactive surface of the semiconductor chip,
the reinforcing layer has an elastic modulus greater than that of the encapsulant,
the semiconductor chip is disposed in the through-hole of the insulating member,
the encapsulant includes a second portion filling at least a portion of the through-hole and covering side surfaces of the semiconductor chip, and
a boundary surface between the reinforcing layer and the encapsulant has curved portions bent toward spaces between inner walls of the through-hole and the semiconductor chip.
30. The fan-out semiconductor package of claim 29 , wherein the reinforcing layer has a thickness greater than that a third portion of the encapsulant covering the insulating member and that of a first portion of the encapsulant covering the inactive surface of the semiconductor chip.
31. A semiconductor package comprising:
one or more insulating layers having a through-hole penetrating through the one or more insulating layers;
a semiconductor chip disposed in the through-hole and having an active surface having connection pads disposed thereon and an inactive surface opposing the active surface;
an encapsulant including a first portion disposed on one side of the semiconductor chip and the one or more insulating layers, and a second portion extending from the first portion and filling a portion of the through-hole to cover side surfaces of the semiconductor chip;
an interconnection member disposed on another side of the semiconductor chip and the one or more insulating layers opposing the one side of the semiconductor chip and the one or more insulating layers, and including a redistribution layer electrically connected to the connection pads of the semiconductor chip; and
a reinforcing layer disposed on the encapsulant and having a dimple penetrated into a region of the encapsulant over the second portion of the encapsulant.