Methods and apparatuses including a string of memory cells having a first select transistor coupled to a second select transistor

1. An apparatus comprising:

a semiconductor pillar;

a gate of a select gate drain transistor around the pillar;

a gate of a control gate transistor around the pillar;

a gate of a first select gate source transistor around the pillar;

a gate of a second select gate source transistor around the pillar; and

a drive transistor having a drain coupled to both:

the gate of the select gate drain transistor; and

the gate of one of the first select gate source transistor or the gate of the second select gate source transistor.

2. The apparatus of claim 1 , further comprising a semiconductor data line coupled to the pillar on the opposite side of the gate of the select gate drain transistor from the gate of the control gate transistor.

3. The apparatus of claim 1 , further comprising a source coupled to the pillar on the opposite side of the gate of the first select gate source transistor from the gate of the control gate transistor.

4. The apparatus of claim 1 , further comprising a dielectric material situated between the gate of the select gate drain transistor and the pillar.

5. The apparatus of claim 1 , wherein the gate of the first select gate source transistor is situated between the gate of the control gate transistor and the gate of the second select gate source transistor and wherein the drive transistor is coupled to both the gate of the select gate drain transistor and the gate of the first select gate source transistor.

6. The apparatus of claim 1 , wherein the gate of the first select gate source transistor is situated between the gate of the control gate transistor and the gate of the second select gate source transistor and wherein the drive transistor is coupled to both the gate of the select gate drain transistor and the gate of the second select gate source transistor.

7. The apparatus of claim 1 , wherein:

the gate of the control gate transistor is situated between the gate of the select gate drain transistor and the gate of the first select gate source transistor; and

the gate of the first select gate source transistor is situated between the gate of the control gate transistor and the gate of the second select gate source transistor.

8. An apparatus comprising:

a U-shaped semiconductor pillar including a first leg and a second leg;

a gate of a select gate drain transistor around the pillar;

a gate of a first control gate transistor around the first leg;

a gate of a first select gate source transistor around the second leg;

a gate of a second select gate source transistor around the second leg;

a gate of a second control gate transistor around the second leg; and

a drive transistor having a drain coupled to both:

the gate of the select gate drain transistor; and

the gate of the first select gate source transistor or the gate of the second select gate source transistor.

9. The apparatus of claim 8 , further comprising a data line coupled to the first leg on the opposite side of the gate of the select gate drain transistor from the gate of the first control gate transistor.

10. The apparatus of claim 8 , further comprising a source coupled to the second leg on the opposite side of the gate of the first select gate source transistor from the gate of the second control gate transistor.

11. The apparatus of claim 8 , further comprising a dielectric material between the gate of the select gate drain transistor and the pillar.

12. The apparatus of claim 8 , further comprising:

a semiconductor material between the gate of the first control gate transistor and the pillar; and

a first dielectric material between the semiconductor material and the pillar.

13. The apparatus of claim 12 , further comprising a second dielectric material between the semiconductor material and the gate of the first control gate transistor.

14. The apparatus of claim 8 , wherein the gate of the first select gate source transistor is situated between the gate of the second control gate transistor and the gate of the second select gate source transistor and wherein the drive transistor is coupled to both the gate of the select gate drain transistor and the gate of the first select gate source transistor.

15. The apparatus of claim 8 , wherein the gate of the first select gate source transistor is situated between the gate of the second control gate transistor and the gate of the second select gate source transistor and wherein the drive transistor is coupled to both the gate of the select gate drain transistor and the gate of the second select gate source transistor.

16. An apparatus comprising:

first, second, third, and fourth semiconductor pillars extending in two rows and two columns of a grid of pillars;

a respective select gate drain transistor around each of the first, second, third, and fourth pillars, wherein the respective select gate drain transistors of the first and second pillars are coupled to a first select gate drain connection, and wherein the respective select gate drain transistors of the third and fourth pillars are coupled to a second select gate drain connection;

control gate transistors situated around each of the first, second, third and fourth pillars, the control gate transistors on a first side of the respective select gate drain transistor;

a respective first select gate source transistor around each of the first, second, third, and fourth pillars, the first select gate source transistor of each pillar on the opposite side of the multiple control gate transistors from the select gate drain transistor;

a respective second select gate source transistor around each of the first, second, third, and fourth pillars, the second select gate source transistor of each pillar on the opposite side of the respective first select gate source transistor from the multiple control gate transistors; and

a source coupled to each of the first, second, third, and fourth pillars on the opposite side of the respective second select gate source transistor of the pillar from the first select gate source transistor of the pillar.

17. The apparatus of claim 16 , wherein:

the first select gate source transistors of the first and second pillars are coupled to a first common first select gate source connection;

the first select gate source transistors of the third and fourth pillars are coupled to a second common first select gate source connection; and

wherein the second select gate source transistors of each of the first, second, third, and fourth pillars are coupled to a common second select gate source connection.

18. The apparatus of claim 17 , further comprising:

a first drive transistor having a drain coupled to both:

the first select gate drain connection; and

the first common first select gate source connection; and

a second drive transistor having a drain coupled to both:

the second select gate drain connection; and

the second common first select gate source connection.

19. The apparatus of claim 16 , wherein:

the second select gate source transistors of the first and second pillars are coupled to a first common second select gate source connection;

the second select gate source transistors of the third and fourth pillars are coupled to a second common second select gate source connection; and

wherein the first select gate source transistors of each of the first, second, third, and fourth pillars are coupled to a common first select gate source connection.

20. The apparatus of claim 19 , further comprising:

a first drive transistor having a drain coupled to both:

the first select gate drain connection; and

the first common second select gate source connection; and

a second drive transistor having a drain coupled to both:

the second select gate drain connection; and

the second common second select gate source connection.