Transistor layout with low aspect ratio

1. A radio-frequency device comprising:

a semiconductor substrate;

a first field-effect transistor disposed on the semiconductor substrate, the first field-effect transistor having a first plurality of drain fingers that extend in a first dimension; and

a second field-effect transistor connected in series with the first field-effect transistor along the first dimension, the second field-effect transistor having a second plurality of drain fingers that extend in a second dimension that is orthogonal with respect to the first dimension.

2. The radio-frequency device of claim 1 wherein the second plurality of drain fingers consists of a different number of fingers than the first plurality of drain fingers.

3. The radio-frequency device of claim 2 wherein the first field-effect transistor has a length in the second dimension that is substantially equal to a length of the second field-effect transistor in the second dimension.

4. The radio-frequency device of claim 3 wherein the length of the first field-effect transistor and the length of the second field-effect transistor are both less than 15 μm.

5. The radio-frequency device of claim 1 further comprising one or more drain contact bars extending over the second plurality of drain fingers in the first dimension and contacting one or more of the second plurality of drain fingers.

6. The radio-frequency device of claim 1 further comprising a plurality of drain contact bars extending over the second plurality of drain fingers in the first dimension and a plurality of source contact bars extending over source fingers of the second field-effect transistor, the plurality of drain contact bars and the plurality of source contact bars having a mirrored configuration with respect to the second dimension.

7. The radio-frequency device of claim 1 further comprising a break running across the second plurality of drain fingers in the first dimension, the break providing a body contact for the second field-effect transistor.

8. A method for fabricating a radio-frequency device, the method comprising:

providing a semiconductor substrate;

forming a first field-effect transistor over the semiconductor substrate, the first field-effect transistor having a first plurality of drain fingers that extend in a first direction; and

forming a second field-effect transistor connected in series with the first field-effect transistor along the first direction, the second field-effect transistor having a second plurality of drain fingers that extend in a second direction that is different than the first direction.

9. The method of claim 8 wherein the second plurality of drain fingers includes more fingers than the first plurality of drain fingers.

10. The method of claim 9 wherein the first field-effect transistor has a length in the second direction that is substantially equal to a length of the second field-effect transistor in the second direction.

11. The method of claim 10 wherein the length of the first field-effect transistor and the length of the second field-effect transistor are both less than 15 μm.

12. The method of claim 8 further comprising forming one or more drain contact bars extending over the second plurality of drain fingers in the first direction and contacting one or more of the second plurality of drain fingers.

13. The method of claim 8 further comprising forming a plurality of drain contact bars extending over the second plurality of drain fingers in the first direction and a plurality of source contact bars extending over source fingers of the second field-effect transistor, the plurality of drain contact bars and the plurality of source contact bars having a mirrored configuration with respect to the second direction.

14. The method of claim 8 further comprising forming a break running across the second plurality of drain fingers in the first direction, the break providing a body contact for the second field-effect transistor.

15. A radio-frequency module comprising:

a packaging substrate configured to receive a plurality of components; and

a transistor stack implemented on the packaging substrate, the transistor stack including a first field-effect transistor disposed on the packaging substrate, the first field-effect transistor having a first plurality of drain fingers that extend in a first dimension, the transistor stack further including a second field-effect transistor in a series connection with the first field-effect transistor along the first dimension, the second field-effect transistor having a second plurality of drain fingers that extend in a second dimension that is orthogonal with respect to the first dimension.

16. The radio-frequency module of claim 15 wherein the second plurality of drain fingers includes a different number of fingers than the first plurality of drain fingers.

17. The radio-frequency module of claim 16 wherein the first field-effect transistor has a length in the second dimension that is substantially equal to a length of the second field-effect transistor in the second dimension.

18. The radio-frequency module of claim 17 wherein the length of the first field-effect transistor and the length of the second field-effect transistor are both less than 15 μm.

19. The radio-frequency module of claim 15 further comprising one or more drain contact bars extending over the second plurality of drain fingers in the first dimension and contacting one or more of the second plurality of drain fingers.

20. The radio-frequency module of claim 15 further comprising a plurality of drain contact bars extending over the second plurality of drain fingers in the first dimension and a plurality of source contact bars extending over source fingers of the second field-effect transistor, the plurality of drain contact bars and the plurality of source contact bars having a mirrored configuration with respect to the second dimension.