Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium
In a process chamber in which a substrate is processed, a gas supply unit is in the process chamber and configured to supply a process gas that processes the substrate. A plasma generation unit is in the process chamber and configured to activate the process gas, and a buffer part is configured to form a buffer chamber accommodating at least a part of the plasma generation unit and include a gas supply hole through which the activated process gas is supplied to the substrate. The buffer part includes a groove portion in which a part of the gas supply hole is cut out.
1. A substrate processing apparatus comprising:
a process chamber configured to accommodate a plurality of substrates held in multiple stages horizontally in a vertical direction;
a gas supply unit including at least one nozzle, the at least one nozzle provided in an annular space between an inner wall of the process chamber and the plurality of substrates, and a process gas supply pipe connecting between the at least one nozzle and a process gas source through a mass flow controller and a valve;
a plasma generation unit including rod-shaped electrodes and an electrode protection pipe, provided in parallel to the at least one nozzle, respectively; and
a buffer chamber accommodating a part of the plasma generation unit and the at least one nozzle of the gas supply unit, a wall of the buffer chamber having a plurality of gas supply holes arranged vertically, so that a gas being ejected from each of the plurality of gas supply holes flows parallel to each of a surface of the plurality of the substrates,
wherein the buffer chamber includes a groove portion connecting the plurality of gas supply holes next to each other in the vertical direction, the groove portion is formed by cutting out a part of a wall surface of the buffer chamber, the wall surface configured to face the plurality of substrates held in multiple stages in a vertical direction, and a width, in a short side direction, of the groove portion is formed to be less than a diameter of each of the plurality of gas supply holes, and greater than or equal to a radius of each of the gas supply holes,
wherein the groove portion is formed above an uppermost gas supply hole of the plurality of gas supply holes arranged vertically, and
wherein each of the plurality of gas supply holes includes an outlet in a same plane as the groove portion and each of the plurality of gas supply holes supplies the gas directly to the process chamber.
2. The substrate processing apparatus according to claim 1 , wherein the groove portion is formed to be shallower than a wall thickness of the buffer chamber.
3. The substrate processing apparatus according to claim 1 , wherein a depth of the groove portion is formed to be greater than or equal to ½ of a radius of each of the plurality of gas supply holes.
4. The substrate processing apparatus according to claim 1 , wherein the groove portion is provided below a lowermost gas supply hole of the plurality of gas supply holes.