Method for manufacturing crystal film
A method for manufacturing a crystal film including: forming a Zr film on a substrate heated to 700° C. or more by a vapor deposition method using a vapor deposition material having a Zr single crystal; forming a ZrO 2 film on said Zr film on a substrate heated to 700° C. or more, by a vapor deposition method using said vapor deposition material having a Zr single crystal, and oxygen; and forming a Y 2 O 3 film on said ZrO 2 film on a substrate heated to 700° C. or more, by a vapor deposition method using a vapor deposition material having Y, and oxygen.
1. A method for manufacturing a crystal film, comprising the steps of:
forming a Zr film on a substrate heated to 700° C. or more by a vapor deposition method using a vapor deposition material having a Zr single crystal;
forming a ZrO 2 film on said Zr film on a substrate heated to 700° C. or more, by a vapor deposition method using said vapor deposition material having a Zr single crystal, and oxygen; and
forming a Y 2 O 3 film on said ZrO 2 film on a substrate heated to 700° C. or more, by a vapor deposition method using a vapor deposition material having Y, and oxygen.
2. The method for manufacturing a crystal film according to claim 1 , wherein:
said substrate has a (100) crystal plane; and
a stacked film in which said ZrO 2 film and said Y 2 O 3 film are stacked is oriented in (100).
3. The method for manufacturing a crystal film according to claim 1 , wherein a peak half-value width when a stacked film in which said ZrO 2 film and said Y 2 O 3 film are stacked is evaluated by X-ray diffraction is 0.05° to 2.0°.
4. The method for manufacturing a crystal film according to claim 1 , wherein:
on a stacked film in which said ZrO 2 film and said Y 2 O 3 film are stacked, an electroconductive film oriented in (100) is formed; and
on said electroconductive film, a dielectric film oriented in (001) is formed.
5. The method for manufacturing a crystal film according to claim 4 , wherein:
said electroconductive film is a film containing a metal; and
said dielectric film is represented by a general formula ABO 3 , being a film containing a perovskite material, A including at least one element selected from the group consisting of Al, Y, Na, K, Rb, Cs, La, Sr, Cr, Ag, Ca, Pr, Nd, Bi and an element of the lanthanum series in the periodic table, B including at least one element selected from the group consisting of Al, Ga, In, Nb, Sn, Ti, Ru, Rh, Pd, Re, OSirPt, U, Co, Fe, Ni, Mn, Cr, Cu, Mg, V, Nb, Ta, Mo and W, or being a film containing a bismuth layered-structure ferroelectric crystal having a structure in which a bismuth oxide layer and a perovskite-type structure block are stacked alternately, said perovskite-type structure block being composed of at least one element L selected from Li, Na, K, Ca, Sr, Ba, Y, Bi, Pb and a rare earth element, at least one element R selected from Ti, Zr, Hf, V, Nb, Ta, W, Mo, Mn, Fe, Si and Ge, and oxygen.
6. The method for manufacturing a crystal film according to claim 4 , wherein:
said electroconductive film is a Pt film; and
a peak half-value width when said Pt film is evaluated by X-ray diffraction is 0.05° to 2.0°.
7. The method for manufacturing a crystal film according to claim 4 , wherein:
said dielectric film is a PZT film; and
a peak half-value width when said PZT film is evaluated by X-ray diffraction is 0.05° to 2.0°.
8. The method for manufacturing a crystal film according to claim 1 , wherein the step of forming the Zr film on the substrate comprises setting an atmosphere around the substrate to a prescribed pressure by performing evacuation by the vacuum pump system, heating the substrate to 700° C. or more, and forming the Zr film on the substrate by heating and evaporating the vapor deposition material having the Zr single crystal.