Periphery purge shutter and flow control systems and methods
An arrangement of two shutters radially outward from an injector block and a susceptor onto which a wafer carrier is removably mounted are configured to provide a flowpath through a reactor chamber that does not exhibit a vortex, thereby reducing or eliminating buildup on the inside of the reactor chamber and facilitating large temperature gradient between the injector block and the wafer carrier. This can be accomplished by introduction of a purge gas flow at a radially inner wall of an upper shutter, and in some embodiments the purge gas can have a different chemical composition than the precursor gas used to grow desired epitaxial structures on the wafer carrier.
1. A reactor for use with a chemical vapor deposition (CVD) system, the reactor comprising:
a susceptor extending radially outward from an axis;
a wafer carrier removably mounted on the susceptor, the wafer carrier having a top surface;
an injector block configured to provide a precursor gas flow to the top surface;
an upper shutter arranged radially outward from the susceptor and extending parallel the axis from the injector block to the top surface;
an inner periphery purge inlet arranged between the upper shutter and the injector block and configured to provide a peripheral gas flow;
a lower shutter arranged radially outward from the upper shutter and extending parallel the axis from the upper shutter away from the injector block; and
wherein a bottom edge of the upper shutter and a top edge of the lower shutter define a gap in fluid communication with an outer periphery purge inlet arranged radially outward from the upper shutter,
wherein at least at least a portion of the peripheral gas flow exiting the inner periphery purge inlet flows around a radially inner bottom edge of the upper shutter and through the gap to the outer periphery purge inlet.
2. The reactor of claim 1 , wherein the inner periphery purge inlet is configured to provide the peripheral gas flow along a radially inner edge of the upper shutter.
3. The reactor of claim 2 , and further comprising a periphery purge outlet arranged radially outward of the lower shutter.
4. The reactor of claim 1 , and further comprising a coolant system thermally coupled with the injector block.
5. The reactor of claim 4 , wherein the coolant system comprises a channel.
6. The reactor of claim 4 , wherein the coolant system comprises a slit.
7. The reactor of claim 2 , wherein a carrier gas component of the precursor gas flow is a different composition than a carrier gas component of the peripheral gas flow.
8. The reactor of claim 7 , wherein the carrier gas component of the peripheral gas flow is denser than the carrier gas component of the precursor gas flow.
9. The reactor of claim 7 , wherein the carrier gas component of the peripheral gas flow includes more nitrogen than the carrier gas component of the precursor gas flow.