Memory having a continuous channel
The present disclosure includes memory having a continuous channel, and methods of processing the same. A number of embodiments include forming a vertical stack having memory cells connected in series between a source select gate and a drain select gate, wherein forming the vertical stack includes forming a continuous channel for the source select gate, the memory cells, and the drain select gate, and removing a portion of the continuous channel for the drain select gate such that the continuous channel is thinner for the drain select gate than for the memory cells and the source select gate.
1. An apparatus, comprising:
memory cells connected in series between a source select gate and a drain select gate; and
a continuous channel for the source select gate, the memory cells, and the drain select gate, wherein:
the continuous channel is thinner for the drain select gate than for the memory cells;
the continuous channel is thinner for the entire drain select gate than for any portion of the source select gate; and
a doping concentration of the continuous channel is different for the drain select gate than for the source select gate.
2. The apparatus of claim 1 , wherein a doping concentration of the continuous channel is different for the drain select gate than for the memory cells.
3. The apparatus of claim 1 , wherein the memory cells comprise a string of memory cells.
4. The apparatus of claim 1 , wherein the apparatus includes:
a first material adjacent the continuous channel for the drain select gate; and
a second material adjacent the continuous channel for the memory cells and the source select gate.
5. The apparatus of claim 1 , wherein the apparatus includes a single material adjacent the continuous channel for the source select gate, the memory cells, and the drain select gate.
6. A method of processing memory, comprising:
forming a vertical stack having memory cells connected in series between a source select gate and a drain select gate;
wherein forming the vertical stack includes forming a continuous channel for the source select gate, the memory cells, and the drain select gate that is thinner for the entire drain select gate than for any portion of the source select gate; and
wherein a doping concentration of the continuous channel is different for the drain select gate than for the memory cells and the source select gate.
7. The method of claim 6 , wherein the continuous channel is thinner for the drain select gate than for the memory cells.
8. The method of claim 6 , wherein forming the vertical stack includes removing a portion of the continuous channel.
9. The method of claim 8 , wherein removing the portion of the continuous channel includes removing only a portion of the continuous channel for the drain select gate.
10. The method of claim 6 , wherein forming the vertical stack includes partially consuming a portion of the continuous channel.
11. An apparatus, comprising:
memory cells connected in series between a source select gate and a drain select gate; and
a continuous channel for the source select gate, the memory cells, and the drain select gate, wherein a doping concentration of the continuous channel is different for the entire drain select gate than for the memory cells and any portion of the source select gate.
12. The apparatus of claim 11 , wherein the source select gate, the memory cells, the drain select gate, and the continuous channel comprise a vertical stack.
13. The apparatus of claim 11 , wherein the continuous channel is thinner for the drain select gate than for the memory cells or the source select gate.
14. The apparatus of claim 11 , wherein the continuous channel is a p-type material.
15. The apparatus of claim 11 , wherein the doping concentration of the continuous channel is lower for the drain select gate than for the memory cells and the source select gate.
16. The apparatus of claim 11 , wherein the apparatus includes:
additional memory cells connected in series between an additional source select gate and an additional drain select gate; and
an additional continuous channel for the additional source select gate, the additional memory cells, and the additional drain select gate, wherein a doping concentration of the additional continuous channel is different for the additional drain select gate than for the additional memory cells or the additional source select gate.
17. The apparatus of claim 16 , wherein the additional continuous channel is thinner for the additional drain select gate than for the additional memory cells or the additional source select gate.