IP Library Granted Patent US 10,204,663
Granted Patent B2
US 10,204,663 · App. 15/454,975 · Granted Feb 12, 2019

Methods and apparatuses for compensating for source voltage

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Quick Facts
Patent No.
US 10,204,663
App. No.
15/454,975
Granted
Feb 12, 2019
Kind
B2
Abstract

Apparatuses and methods for compensating for source voltage are described. An example apparatus includes a source cooled to a memory cell and a read-write circuit coupled to the memory cell. The apparatus further includes a sense current generator coupled to a node or the source and to the read-write circuit, the sense current generator configured to control provision of a sense current by the read-write circuit responsive to a voltage of the node of the source.

Claims (15)

1. An apparatus, comprising:

a sense current generator coupled to a node of a source line coupled to a memory cell, the sense current generator configured to control a sense current used to access the memory cell by sensing a current through a feedback transistor coupled to the source line via a reference resistance.

2. The apparatus of claim 1 , wherein the sense current generator further comprises an amplifier coupled to the feedback transistor and the source line, the amplifier configured to provide a bias voltage to a read/write circuit based on a feedback voltage received at the input of the amplifier.

3. The apparatus of claim 1 , further comprising a read/write circuit coupled to the memory cell.

4. The apparatus of claim 3 , wherein the sense current generator configured to control the sense current used to access the memory cell comprises the sense current generator coupled to a sense current transistor of the read write circuit and the sense current generator configured to provide a bias voltage to a gate of the sense current transistor based on the voltage of the node of the source line.

5. The apparatus of claim 4 , wherein the sense current generator is configured to provide the bias voltage to the read-write circuit responsive a memory access command.

6. The apparatus of claim 1 , further comprising a string of memory cells that includes the memory cell.

7. A method, comprising:

providing a bias voltage to a read-write circuit and to a gate of a feedback transistor having a voltage based on a feedback voltage, wherein the feedback voltage is sensed from a node between the feedback transistor and a resistance coupled to a source line; and

providing a sense current at the read-write circuit having a value based on the voltage of the bias voltage.

8. The method of claim 7 , further comprising detecting that the voltage of the source line is greater than a reference voltage.

9. The method of claim 7 , wherein providing the bias voltage to the read-write circuit comprises providing the bias voltage to a gate of a sense current transistor.

10. The method of claim 7 , further comprising activating a source line transistor to couple the source line to a reference node.

11. The method of claim 7 , further comprising detecting a value stored in a memory cell based on the sense current.

12. The method of claim 7 , further comprising receiving the feedback voltage from the feedback node.

Assignments (4)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050702/0451 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
SUPPLEMENT NO. 4 TO PATENT SECURITY AGREEMENT Recorded May 4, 2017
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042405/0909 →