Magnetoresistive memory device with different write pulse patterns
According to one embodiment, a memory device includes: a magnetoresistive element including first and second magnetic layers and a non-magnetic layer provided between the first and second magnetic layers; and a write circuit which controls a first writing setting magnetization of the first and second magnetic layers in a parallel state and a second writing setting the magnetization of the first and second magnetic layers in an antiparallel state, and applies a current pulse to the magnetoresistive element. A first pulse pattern used in the first writing is different from a second pulse pattern used in the second writing.
1. A memory device comprising:
a magnetoresistive element including first and second magnetic layers and a non-magnetic layer provided between the first and second magnetic layers; and
a write circuit which controls a first writing which sets magnetization of the first and second magnetic layers in a parallel state and a second writing which sets the magnetization of the first and second magnetic layers in an antiparallel state,
wherein the write circuit applies a first write current to the magnetoresistive element in the first writing, and applies a second write current to the magnetoresistive element in the second writing,
wherein the first write current consists of n pulses having a same polarity, where n is an integer of 2 or more,
wherein current levels of intervals between the n pulses are lower than current levels of the n pulses, and
wherein the second write current consists of a single pulse.
2. The device of claim 1 , wherein a width of the single pulse is substantially the same as an entire width of the n pulses.
3. The device of claim 1 , wherein two of the n pulses are different from each other in current level.
4. The device of claim 1 , wherein:
the n pulses comprise first to third pulses, and
two intervals between the first to third pulses are different from each other in current level.
5. The device of claim 1 , wherein two of then pulses are different from each other in width.
6. The device of claim 1 , wherein:
the n pulses comprise first to third pulses, and
two intervals between the first to third pulses are different from each other in length.
7. The device of claim 1 , further comprising:
a first line electrically connected to a first terminal of the magnetoresistive element; and
a second line electrically connected to a second terminal of the magnetoresistive element,
wherein the write circuit applies the first write current or the second write current to the first and second lines.